• Title/Summary/Keyword: Trench depth

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Transformation of Long Waves Propagating over Trench (트렌치 위를 통과하는 장파의 변형)

  • Jung, Tae-Hwa;Suh, Kyung-Duck;Cho, Yong-Sik;Park, Sung-Hyun
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.19 no.3
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    • pp.228-236
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    • 2007
  • An analytical solution for long waves propagating over an asymmetric trench is derived. The water depth inside the trench varies in proportion to a power of distance from the center of the trench. The mild-slope equation, governing equation, is transformed into second order ordinary differential equation with variable coefficients by using the long wave assumption and then the analytical solution is obtained by using the power series technique. The analytical solution is confirmed by comparison with the numerical solution. After calculating the analytical solution under various conditions, the results are analyzed.

Design of 1,200 V Class High Efficiency Trench Gate Field Stop IGBT with Nano Trench Gate Structure (1 um 미만의 나노트렌치 게이트 구조를 갖는 1,200 V 고효율 트렌치 게이트 필드스톱 IGBT 설계에 관한 연구)

  • Kang, Ey Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.4
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    • pp.208-211
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    • 2018
  • This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

Depth-dependent Variations in Elemental and Mineral Distribution in the Deep Oceanic Floor Sediments (WP21GPC04) near the Mariana Trench in the Western Pacific Ocean (마리아나 해구에 인접한 서태평양 심해평원의 정점 WP21GPC04에서 수집된 해양 퇴적물의 깊이에 따른 원소 및 광물 분포 변화)

  • Junte Heo;Seohee Yun;Jonguk Kim;Young Tak Ko;Yongjae Lee
    • Economic and Environmental Geology
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    • v.56 no.5
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    • pp.581-588
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    • 2023
  • This study reports depth-dependent elemental distribution and mineral abundance of the oceanic sediment sample (WP21GPC04) near the Mariana Trench collected during the WP21 expedition in 2021. The elemental distribution determined by μ-XRF shows no significant differences with varying depth, with an average SiO2 53.91 wt%, FeO 4.48 wt%, Al2O3 16.56 wt%, MgO 2.56 wt%, CaO 4.79 wt%, Na2O 3.52 wt%, K2O 5.48 wt%, similar to the average chemical composition of global subducting sediments (GLOSS). The mineral abundances analyzed using synchrotron XRD, however, vary with depth. While quartz, mica, and plagioclase were identified at all depths, chlorite was found at shallow depths, and zeolite group minerals, phillipsite and heulandite, showed a gradual change in phase fraction with depth. This suggests a change in sedimentation and alteration environments in the region, or the potential for coexistence emerges due to similar sediment stability. Overall, this study will provide a basis for the future investigations on the evolution of sedimentary environment near the Mariana Trench in the western Pacific Ocean and the phase distribution and the behavior of subducting oceanic sediments, which will affect the lithological and geochemical characteristics of the Mariana susduction system.

Evaporation and Desiccation of Soft Dredged Clay (초연약 준설토의 증발 및 건조특성 분석)

  • 정하익;오인규;지성현;이승원;이영남;김수삼
    • Proceedings of the Korean Geotechical Society Conference
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    • 2000.11a
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    • pp.217-222
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    • 2000
  • An understanding of the behaviour of soft clay soils is important in a large number of civil engineering applications, including dredging operations, land reclamation and slurry management such as disposal and storage. Although the details of the behaviour depend on parameters such as the soil mineralogy, the pore water chemistry, the organic content and the microbiology, there are general features that are typical in many cases. The purpose of this paper is to present and discuss some of evaporation and desiccation observed in laboratory experiments under controlled conditions. Desiccation of dredged material is basically removal of water by evaporation which is controlled by weather and material type, etc. This study shows that (1) solar radiation, (2) wind velocity, (3) material depth, (4) trench depth are important factors in desiccation of dredged ultra soft clay.

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Desiccation Characteristics of Dredged Soft Clay by Large Model Test (모형토조시험을 통한 준설매립토의 건조특성에 관한 연구)

  • 정하익;오인규;지성현;이승원;이영남
    • Proceedings of the Korean Geotechical Society Conference
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    • 2001.03a
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    • pp.591-596
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    • 2001
  • The purpose of this paper Is to present and discuss some of evaporation and desiccation observed in laboratory experiments under controlled conditions, and is to improve PTM(Progressive Trenching Method) operating technique. PTM is the technically feasible and economically justifiable dewatering and desiccation technique for dredged material containment areas. A series of laboratory experiments with large model test were carried out to get evaporation rate and strength increase. Surface desiccation of dredged material is basically changed by evaporation characteristics which is controlled by weather and trench type, etc. This study shows that trench depth and rain fall are important factors in desiccation of dredged soft clay.

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Bearing capacity of strip footings on a stone masonry trench in clay

  • Mohebkhah, Amin
    • Geomechanics and Engineering
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    • v.13 no.2
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    • pp.255-267
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    • 2017
  • Soft clay strata can suffer significant settlement or stability problems under building loads. Among the methods proposed to strengthen weak soils is the application of a stone masonry trench (SMT) beneath RC strip foundations (as a masonry pad-stone). Although, SMTs are frequently employed in engineering practice; however, the effectiveness of SMTs on the ultimate bearing capacity improvement of a strip footing rested on a weak clay stratum has not been investigated quantitatively, yet. Therefore, the expected increase of bearing capacity of strip footings reinforced with SMTs is of interest and needs to be evaluated. This study presents a two-dimensional numerical model using the discrete element method (DEM) to capture the ultimate load-bearing capacity of a strip footing on a soft clay reinforced with a SMT. The developed DEM model was then used to perform a parametric study to investigate the effects of SMT geometry and properties on the footing bearing capacity with and without the presence of surcharge. The dimensions of the SMTs were varied to determine the optimum trench relative depth. The study showed that inclusion of a SMT of optimum dimension in a soft clay can improve the bearing capacity of a strip footing up to a factor of 3.5.

A New Method for Deep Trench Isolation Using Selective Polycrystalline Silicon Growth (다결정 실리콘의 선택적 성장을 이용한 깊은 트랜치 격리기술)

  • 박찬우;김상훈;현영철;이승윤;심규환;강진영
    • Journal of the Korean Vacuum Society
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    • v.11 no.4
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    • pp.235-239
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    • 2002
  • A new method for deep trench isolation using selective growth of polycrystalline silicon is proposed. In this method, trench filling is performed by forming polysilicon-inner sidewalls within the trench, and then selectively growing them by reduced chemical vapor deposition using $SiH_2C1_2$gas at $1100^{\circ}C$. The surface profiles of filled trenches are determined mainly by the initial depth of inner sidewalls and the total thickness of selective growth. No chemical mechanical polishing(CMP) process is needed in this new method, which makes the process flow simpler and more reliable in comparison with the conventional method using CMP process.

Laser microstructuring of trench and its application to optical waveguide (레이저를 이용한 트렌치 제작 및 응용 연구)

  • Choi, Hun-Kook;Yoo, Dongyoon;Sohn, Ik-Bu;Noh, Young-Chul;Kim, Young-Sic;Kim, Su-yong;Kim, Wan-Chun;Kim, Jin-Bong
    • Laser Solutions
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    • v.18 no.1
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    • pp.7-11
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    • 2015
  • In this paper, micro trench structure is fabricated by femtosecond laser for inserting optical reflecting wavelength filter in planar waveguide. The width and depth of the trench is controlled by femtosecond laser machining condition. Also, large scale of single channel with 500um and 1000um on silica plate is fabricated by femtosecond laser, and roughness of the channel surface is polished by $CO_2$ laser for the insertion of the filter. Then, the characteristic of the planar waveguide inserted the filter is verified.

A Study on Electrical Characteristics of Field Stop IGBT with Separated Gate Structure (분리된 게이트 구조를 갖는 필드 스톱 IGBT의 전기적 특성에 관한 연구)

  • HyeongSeong Jo;Jang Hyeon Lee;Kung Yen Lee;Ey Goo Kang
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.6
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    • pp.609-613
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    • 2023
  • In this paper, a 1,200 V Si-based IGBT used in electric vehicles and new energy industries was designed. A field stop IGBT with a separate gate structure, which is the proposed structure, was designed to change trench depth and split gate width variables. Then, the general trench structure and electrical characteristics were compared and analyzed. As a result of conducting the trench depth experiment, it was confirmed that the breakdown voltage was the highest at 6 ㎛, and the on-state voltage drop was the lowest at 3.5 ㎛. In the separate gate width experiment, it was confirmed that the breakdown voltage decreased as the variable increased, and the on-state voltage drop increased. Therefore, it may be seen that it is preferable not to change the width of the separate gate. In addition, experiments show that there is no difference in on-state voltage drop compared to a structure in which a general field stop structure has a separate gate structure. In other words, it is determined that adding a dummy gate with a separate gate structure to the active cell will significantly improve the on-voltage drop characteristics, while confirming that the on-voltage drop does not change, and while having excellent characteristics in terms of breakdown voltage.

Profile control of high aspect ratio silicon trench etch using SF6/O2/BHr plasma chemistry (고종횡비 실리콘 트랜치 건식식각 공정에 관한 연구)

  • 함동은;신수범;안진호
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.69-69
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    • 2003
  • 최근 trench capacitor, isolation trench, micro-electromechanical system(MEMS), micro-opto-electromechanical system(MOEMS)등의 다양한 기술에 적용될 고종횡비(HAR) 실리콘 식각기술연구가 진행되어 지고 있다. 이는 기존의 습식식각시 발생하는 결정방향에 따른 식각률의 차이에 관한 문제와 standard reactive ion etching(RIE) 에서의 낮은 종횡비와 식각률에 기인한 문제점들을 개선하기 위해 고밀도 플라즈마를 이용한 건식식각 장비를 사용하여 고종횡비(depth/width), 높은 식각률을 가지는 이방성 트랜치 구조를 얻는 것이다. 초기에는 주로 HBr chemistry를 이용한 연구가 진행되었는데 이는 식각률이 낮고 많은양의 식각부산물이 챔버와 시편에 재증착되는 문제가 발생하였다. 또한 SF6 chemistry의 사용을 통해 식각률의 향상은 가져왔지만 화학적 식각에 기인한 local bowing과 같은 이방성 식각의 문제점들로 인해 최근까지 CHF3, C2F6, C4F8, CF4등의 첨가가스를 이용하여 측벽에 Polymer layer의 식각보호막을 형성시켜 이방성 구조를 얻는 multi_step 공정이 일반화 되었다. 이에 본 연구에서는 SF6 chemistry와 소량의 02/HBr의 첨가가스를 이용한 single_step 공정을 통해 공정의 간소화 및 식각 프로파일을 개선하여 최적의 HAR 실리콘 식각공정 조건을 확보하고자 하였다.

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