• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.4
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• pp.157-163
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• 1984

The object of this paper is to investigte the gate controlled diode structure for ionic concentration measurement. It includes device fabrication, characterization, device physics and modeling of the gate controlled diode structure. The differences of turn on voltages and surface generation currents in the (100) and (111) silicon crystallographic orientation of the sample device were observed. Therefore the dependence of these two factors of the silicon crystallographic orientation was investigated. It was observed that drifts arose after extended immersion of the sample device in acid or base solutions. The surface generation-recombination velocity of both (100) and (111) increased. The increase in the interfacial traps for both surface, determined by the turn on voltage was directly proportional to the surface generation-recombination velocity increase.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.195-197
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• 2002

CdTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. Photoluminescence(PL) spectra of the synthesized CdTe QDs revealed the intensity of PL peaks was stronger as the condensation time was longer. This result was thought because annealing effect by thermal energy transferred during condensation eliminated defects which act as traps and recombination centers in CdTe particle. PL intensity has stron dependence of Te precursor concentration. It confirmed the ratio of Te ion to Cd ion added during synthesis affected the particle size and size distribution of the CdTe QDs. Finally, the synthesized CdTe QDs were identified to be cubic structured CdTe quantum dots by X-ray diffraction(XRD).

• Transactions on Electrical and Electronic Materials
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• v.6 no.6
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• pp.280-283
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• 2005

The moving photocarrier grating (MPG) technique for the determination of the carrier mobilities and the recombination lifetime of $\alpha$-Se:As films has been studied. The electron and hole drift mobility and the recombination lifetime of $\alpha$-Se films with arsenic (As) additions have been obtained from measurement of the short circuit current density $j_{sc}$ as a function of grating velocity and spatial period. The hole mobility decreases due to defect density of hole traps when x exceeds 0.003, whereas the hole mobility increases for the case of low As addition (x$\le$0.003). We have found an increase in hole drift mobility and recombination lifetime, especially when As with (x = 0.003) is added into the $\alpha$-Se film.

• Journal of Plant Biology
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• v.2 no.1
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• pp.1-7
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• 1959

As no reference to the seasonal variations in the mosquito population of the country has been noted in the past literature and as such a survey is apparantlyprequite to insecticidal orerations, an observat on of the subject may be ofvalue. The investigation was made te different geographical locations during theperiod from March 1952 to Jul 1956 In order to obtain as accurte an averagepicture as pasaible of the country, the locations Covered geograpically such scat-tered lropertions as could represent a balance 1croverage : S_oui, kangoongNational Forestry, Incheon, Gunaa , Uejiongbu, Chungcheon, Wonju, Taegukangnoong of the eastcoast,pohang Pusan, Masan and two islands of Chejudo andPaeckyongdo. The total of approximately 3620 larval coll ctions r.corded fromthe check points described above were divided s follows ; sexul area, 950 larvae;Kangnoong National Forestry, 850 larae; Pusan area. 520 larvae; other loations,700 larvae In mosquito to adult collactions 134 light traps (new Jersey type)and 67biting collections were performed.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.67.2-67.2
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• 2012

Graphene is expected to have a significant impact in various fields in the foreseeable future. For example, graphene is considered to be a promising candidate to replace indium tin oxide (ITO) as transparent conductive electrodes in optoelectronics applications. We report the tunability of the wavelength of localized surface plasmon resonance by varying the distance between graphene and Au nanoparticles [1]. It is estimated that every nanometer of change in the distance between graphene and the nanoparticles corresponds to a resonance wavelength shift of ~12 nm. The nanoparticle-graphene separation changes the coupling strength of the electromagnetic field of the excited plasmons in the nanoparticles and the antiparallel image dipoles in graphene. We also show a hysteresis in the conductance and capacitance can serve as a platform for graphene memory devices. We report the hysteresis in capacitance-voltage measurements on top gated bilayer graphene which provide a direct experimental evidence of the existence of charge traps as the cause for the hysteresis [2]. By applying a back gate bias to tune the Fermi level, an opposite sequence of switching with the different charge carriers, holes and electrons, is found [3]. The charging and discharging effect is proposed to explain this ambipolar bistable hysteretic switching.

• Korean journal of applied entomology
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• v.55 no.4
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• pp.495-499
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• 2016

The specimens belonging to the family Biphyllidae were collected at Mt. Baekun-san (Nonsil and Hanjae), Jeollanam-do with Lindgren funnel traps from May to August, 2015. Through this study, we report seven species of the genus Biphyllus including three newly recorded species; B. aequalis (Reitter), B. flexuosus (Reitter) and B. kuzurius Sasaji. We herein present the key to the identification of species of the Korean Biphyllidae and illustrations of diagnostic characteristics of them.

• Korean journal of applied entomology
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• v.42 no.2
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• pp.165-167
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• 2003

The seasonal occurrence of smaller clearwing moth (Synanthedon tenuis) was monitored with sex pheromone traps in sweet persimmon orchards in Gimhae and Jinju in 1998, 2001, and 2002. Results indicated that it occurred in two generations a year. The first generation of the moth occurred from mid-May to early July, and the second one_from late July to late September, showing the peaks in early June and early to mid-August, respectively.

• Journal of Electrical Engineering and Technology
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• v.8 no.2
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• pp.262-270
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• 2013

A boundary protection method for power distribution line based on equivalent boundary effect is presented in this paper. In the proposed scheme, the equivalent resonance component with a certain central frequency is sleeve-mounted at the beginning of protected zone. The 'Line Boundary' is built by using boundary effect, which is created by introducing impedance in the primary-side of line. The 'Line Boundary' is significantly different from line wave impedance. Therefore, the boundary protection principle can be applied to power distribution line without line traps. To analyze the frequency characteristic corresponding to traveling-waves of introducing impedance in the primary-side of line, distributed parameters model of equivalent resonance component is established. The results of PSCAD/EMTDC simulation prove the obvious difference of voltage high frequency component between internal faults and external faults due to equivalent resonance component, and validate the scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.55-58
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• 1998

Recently, neural networks with self-adaptability like human brain have attracted much attention. It is desirable for the neuron-function to be implemented by exclusive hardware system on account of huge quantity in calculation. We have proposed a novel neuro-device composed of a MFSFET(ferroelectric gate FET) and oscillation circuit with CUJT(complimentary unijuction transistor) and PUT(programmable unijuction transistor). However, it is difficult to preserve ferroelectricity on Si due to existence of interfacial traps and/or interdiffusion of the constitutent elements, although there are a few reports on good MFS devices. In this paper, we have simulated CUJT and PUT devices instead of fabricating them and composed oscillation circuit. Finally, we have resented, as an approach to the MFSFET neuron circuit, adaptive learning function and characterized the elementary operation properties of the pulse oscillation circuit.

• 전기의세계
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• v.26 no.4
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• pp.68-72
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• 1977

The main purpose of this paper is to study on the nature of the traps in polymer. The polyethlene is typical of polymer material as to be selected for a sample. The current I$_{th}$ are obtained with an small external bias voltage from high density polyethylene which have been treated by the high-field application. Two peaks, P$_{1}$ and P$_{2}$ with maxima near 85.deg. C, respectively, appeared on the current I$_{th}$ spectrum. From the results of experiment, It is clear that The current I$_{th}$ arises from the drift, under the external field, of carriers released from the trap sites by the heating and the trap is surrounded by a potential barrier and trapping proceeds during the high-field treatment. The obtained results can suggest that polyethylene contains trap sites which have an important role in the electrical conduction and breakdown of polymeric materials.rials.