• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.134-137
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• 2019

In this paper, the data retention characteristics were analyzed to find out the thickness effect on the trap energy distribution of silicon nitride in the silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices. The nitride films were prepared by low pressure chemical vapor deposition (LPCVD). The flat band voltage shift in the programmed device was measured at the elevated temperatures to observe the thermal excitation of electrons from the nitride traps in the retention mode. The trap energy distribution was extracted using the charge decay rates and the experimental results show that the portion of the shallow interface trap in the total nitride trap amount including interface and bulk trap increases as the nitride thickness decreases.

• Current Optics and Photonics
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• v.5 no.3
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• pp.220-228
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• 2021

To improve the measurement accuracy of a solar-radiation observer instrument, aiming at the problem of multiorder-stray-light interference caused by the diffraction of the flat-field concave grating in the spectroscopic system, straylight suppression methods for different forms of optical traps are studied. According to the grating surface-scattering distribution-function model, the bidirectional scattering distribution function (BSDF) of a dust-polluted surface and the flat-field concave grating's transition area of the spectroscopic system is calculated, and a Lyot stop with blade baffle is designed to suppress this kind of stray light. For diffraction multiorder stray light, based on the theory of light-energy transmission, a design for precise positioning of the trench optical trap is proposed. The superiority of the method is verified through simulation and actual measurement. The simulation results show that in a spectroscopic system approximately 160 mm × 140 mm × 80 mm in size, the energy of the stray light is reduced by one order of magnitude by means of the trench optical trap and Lyot stop, and the number of beams is reduced from 5664 to 1040. The actual measurements show that the stray-light-suppression efficiency is about 69.4%, which is effective reduction of the amount of stray light.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.455-461
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• 2023

We investigated the electrical characteristics of ZnO nanoparticles (NPs) with air exposure that is a widely used electron transport layer for quantum dot light-emitting diodes (QLEDs). Upon air exposure, we observed changes in the density of states (DOS) of the trap levels of ZnO NPs. In particular, with air exposure, the concentration of deep trap energy levels in ZnO NPs decreased and electron mobility significantly improved. Consequently, the air-exposed ZnO reduced leakage current by approximately one order of magnitude and enhanced the external quantum efficiency at the low driving voltage region of the QLED. In addition, based on the excellent conductivity properties, high-brightness QLEDs could be achieved.

• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.302-309
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• 2017

The ageing of XLPE cable insulation will lead to the accelerating accumulation of space charge, which will greatly affect the safe operation of the HVDC cable. In order to investigate the influence of different ageing modes on the space charge distribution of the HVDC cable, thermal stressed, electrical stressed and electro-thermal stressed endurance tests were carried out on the XLPE peelings. The tested XLPE peelings were obtained from 160kV HVDC cable insulation. The endurance tests were carried at thermal stress of 363K, electrical stress of 20kV/mm DC and a combination of both. The Pulsed Electro-Acoustic (PEA) method was used to measure the space charge distribution of the samples. The influences of ageing on the trap energy distribution were analyzed based on the isothermal relaxation theory and the decay characteristics of the space charge. The results showed that thermal ageing would help to improve the crystalline morphologies of the XLPE at the early stage. The total amount of space charge decreased compared to the ones before thermal ageing. The long term of electrical stress would result in the cleavage of polymer molecule chains which would intensify the accumulation of space charge and increase the density and depth of electron traps. With a combination of electrical and thermal stress, the injection and migration of space charge were more significant. Besides, the depth and density of electron traps increased rapidly with the increase of endurance time.

• 전기의세계
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• v.26 no.6
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• pp.86-92
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• 1977

The phenomenon of non-steady-state current flow through the interface traps during the dielectric relaxation of MOS device is presented. Experimental method is also described for determining the energy distribution of interface traps, which is based on isothermal dielectric relaxation current technique. Actually, the energy distribution of interface traps was obtained by measuring the transient current through the traps at Si-SiO$_{2}$ interface only in lower-half of the bandgap. It is shown that the trap energy distributio has peak value 1.72*10$^{13}$ cm$^{-2}$ eV$^{-1}$ near 0.73eV approximately.

• Journal of The Korean Astronomical Society
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• v.36 no.spc1
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• pp.63-73
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• 2003

Solar flares present a number of radiative characteristics indicative of kinetic processes of high energy particles. Proper understanding of the kinetic processes, however, relies on how well we can separate the acceleration from transport characteristics. In this paper, we discuss microwave and hard X-ray bursts as a powerful tool in investigating the acceleration and transport of high energy electrons. After a brief review of the studies devoted to the kinetic process of solar flare particles, we cast them into a simple formulation which allows us to handle the injection, trap, and precipitation of flare electrons self-consistently. The formulation is then taken as a basis for interpreting and analyzing a set of impulsive and gradual bursts occurred on 2001 April 6 observed with the Owens Valley Solar Array, and HXT/WBS onboard Yohkoh satellite. We quantify the acceleration, trap, and precipitation processes during each burst in terms of relevant time scales, and also determine ambient density and magnetic field. Our result suggests that it should be the acceleration property, in particular, electron pitch angle distribution, rather than the trap condition, that is mainly responsible for the distinctive properties of the impulsive and gradual flares.

• Journal of Electrical Engineering and Technology
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• v.9 no.2
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• pp.635-642
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• 2014

The space charge behaviors of oil-paper insulation affect the stability and security of oil-filled converter transformers of traditional and new energies. This paper presents the results of the electrical aging of oil-impregnated paper under AC-DC combined voltages by the pulsed electro-acoustic technique. Data mining and feature extractions were performed on the influence of electrical aging on charge dynamics based on the experiment results in the first stage. Characteristic parameters such as total charge injection and apparent charge mobility were calculated. The influences of electrical aging on the trap energy distribution of an oil-paper insulation system were analyzed and discussed. Longer electrical aging time would increase the depth and energy density of charge trap, which decelerates the apparent charge mobility and increases the probability of hot electron formation. This mechanism would accelerate damage to the cellulose and the formation of discharge channels, enhance the acceleration of the electric field distortion, and shorten insulation lifetime under AC-DC combined voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.4
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• pp.1-9
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• 2002

The distribution characteristics of data retention time for DRAM was studied in connection with the probability distribution of the cell parameters. Using the cell parameters and the transient characteristics of cell node voltage, data retention time was investigated. The activation energy for dielectric layer growth on cell capacitance, the recombination trap energy for leakage current in the junction depletion region, and the sensitivity characteristics of sense amplifier were used as the random variables to perform the Monte Carlo simulation, and the probability distributions of cell parameters and distribution characteristics of cumulative failure bit on data retention time in DRAM cells were calculated. we found that the sensitivity characteristics of sense amplifier strongly affected on the tail bit distribution of data retention time.

• The Journal of the Acoustical Society of Korea
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• v.10 no.3
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• pp.19-30
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• 1991

The surface properties such as energy gap, exciton, shallow trap level, deep trap level, type inversion with annealing and metastable state of $EL_2$ level of SI GaAs wafers and the conductivity distribution of 2 inch Cr doped GaAs wafer were investigated using nondestructive TAV(transverse acoustoelectric voltage) technique. The TAV is generated when SAW and semiconductor interact. We also have tried newly SAW oscillator technique to investigate the surface properties of semiconductor wafers and we have shown the validity of this technique.

• Bulletin of the Korean Chemical Society
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• v.6 no.4
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• pp.218-221
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• 1985

Transient charging and discharging currents as well as space charge limited currents have been measured in biaxially stretched poly(vinylidene fluoride) film under various poling fields and temperatures. At low temperatures and short poling times, the I-V characteristics showed shallow trap behavior. When the current values extrapolated to the infinite time, the I-V characteristics indicate that the distribution of the trap energy levels is uniform or very broad. The abnormal suppression of current at higher poling voltages and the high discharge rate observed also in the same voltage range are attributed to the morphological changes due to dipole reorientation.