• Journal of radiological science and technology
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• v.22 no.1
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• pp.55-60
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• 1999

In this study, the highly sensitive $CaSO_4:Tb$ glass capsule type TLDs are fabricated and their trap parameters are determined. The optimum conditions of fabricating of $CaSO_4:Tb$ phosphor was obtained to be in impurity concentration of Tb 1.0 mol% and sintering of $600^{\circ}C$, 2 hr. The glow curve of $CaSO_4:Tb$ consists of three glow peaks and these peaks are isolated by thermal bleaching method. Activation energy of the three glow peaks measured by the initial rise, the peak shape and the heating rate method are 0.70, 0.87, and 1.03 eV. The frequency factors are $1.76{\times}10^9,\;1.74{\times}10^9$, and $9.77{\times}10^8\;s^{-1}$, and the kinetic orders are 1.12, 1.46, and 1.34, respectively. The isolated glow peaks are fitted by least square method and optimum temperature range of the main peak for radiation dosimetry is $230{\sim}295^{\circ}C$.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.20 no.4
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• pp.407-411
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• 2011

The technology of line heating has evolved in various methods. Among them, fossil fuels like ethylene gas and LPG(Liquid Petroleum Gas) are widely used due to their simple utility. In the meantime, the technology implementing high frequency for line heating has also been developed continually, but its manufacturing technology or application includes lots of problems by now. One of the main characteristics of line heating using conventional technolob'Y is the quenching effect followed by heating process. On the other hand, hydrox gas which is mixed by hydrogen and oxygen is a prominent candidate for an application without above shortcomings. Especially, it is found that line heating using hydrox gas is tremendously effective taking low cost as well as low noise. In this paper, a small cell with high efficiency which can minimize installing space is developed to deal with the problem installing in narrow place. Experiments to prove the validation, efficiency and effectiveness is carried out by characterizing in the line heating of steel. It is found that the energy saving of using hydrox gas for line heating is significant and that the deviation performance is reduced by 78~89%. Furthermore, the noise is also reduced as amount of 18.3% though the heating time is not too different.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.268-269
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• 2008

Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

• Journal of Radiation Protection and Research
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• v.7 no.1
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• pp.49-55
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• 1982

Thermally stimulated currents of polymers have some properties as radiation dosimetry, especially polymer could be made as a good dosimeter in biological fields because of tissue equivalent material. We experimented the radiation response of polymers and attempted to apply it in clinical use. Polymers have the properties of thermoluminescence and thermally stimulated currents which are due to several kinds of charged particles such as dipoles, electronic trapped charges and mobile ions. Several peaks are datected in the thermally stimulated currents in polyethylene under vias field V, by heating from room temperature to $100^{\circ}C$ shortly after irradiation. As V increases, both the peak temperature $T_m$ and the activation energy H decreases, while the peak current $I_m$ increases. We plotted the $T_m-V\;and\;I_m-V$ curves and calculated the electron trap depth with the recombination operative TSC theory and compared the peak TSC with radiation doses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.211.1-211.1
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• 2014

Recently, the scaling of conventional planar NAND flash devices is facing its limits by decreasing numbers of electron stored in the floating gate and increasing difficulties in patterning. Three-dimensional vertical NAND devices have been proposed to overcome these issues. Atomic layer deposition (ALD) is the most promising method to deposit charge trap layer of vertical NAND devices, SiN, with excellent quality due to not only its self-limiting growth characteristics but also low process temperature. ALD of silicon nitride were studied using NH3 and silicon chloride precursors, such as SiCl4[1], SiH2Cl2[2], Si2Cl6[3], and Si3Cl8. However, the reaction mechanism of ALD silicon nitride process was rarely reported. In the present study, we used density functional theory (DFT) method to calculate the reaction of silicon chloride precursors with a silicon nitride surface. DFT is a quantum mechanical modeling method to investigate the electronic structure of many-body systems, in particular atoms, molecules, and the condensed phases. The bond dissociation energy of each precursor was calculated and compared with each other. The different reactivities of silicon chlorides precursors were discussed using the calculated results.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.526-529
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• 2002

Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.1
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• pp.68-73
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• 1990

GaAs epilayer was grown on Si(100) substrate using the two-step growth method by MBE. The crystal growth mode have been investigated by RHEED. The hydrogenation effects of GaAs epilayer were studied by DLTS and Raman spectroscopy. The four electron traps in GaAs/Si layer were observed and their activation energy ranged from 0.47 eV to 0.81 eV below the conduction band. After hydrogenation at 250\ulcorner for 3 hours, new trap not observed and electron traps at Ec-0.68, 0.54 and 0.47 eV were almost passivated. Whereas the Ec-0.81 eV level showed no significant change in concentration. From Raman measurement, GaAs epilayer is found to be influenced by the tensile stress.

• Corrosion Science and Technology
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• v.17 no.4
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• pp.193-201
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• 2018

In order to suppress $CO_2$ emission and protect passengers in case of vehicle collision, continuous efforts are being made to increase the application ratio and tensile strength of advanced high strength steels used in the manufacturing of automotive body. Simultaneously, hydrogen embrittlement which was not a concern in the past has currently become a major issue due to microstructure that is sensitive to hydrogen uptake. The sensitivity increases with residual stress and hydrogen uptake content. Many automotive OEM companies and mill makers are setting specifications to control hydrogen embrittlement. The factors which lead to hydrogen embrittlement are material sensitivity, residual stress, and hydrogen concentration; researches are in progress to develop countermeasures. To reduce material sensitivity, mill makers add high energy trap elements or microstructure refinement elements. Automotive OEM companies design the car parts not to concentrate local stress. And they manage the levels to not to exceed critical hydrogen concentration. In this article, we have reviewed hydrogen embrittlement evaluation methods and corresponding solutions that are being studied in automobile manufacturing industries and mill makers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.29-34
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• 2000

The effects of electrical stress on MILC(Metal Induced Lateral Crystallization) poly-Si TFT were studied. After the electrical stress was applied on the TFT’s which were fabricated by MILC process, off-state(VG<0V) current was reduced by $10^2{\sim}10^4$ times. However, when the device on which electrical stress was applied was annealed in furnace, the off-state current increased as annealing temperature increased. From the dependence of off-state current on the post-annealing temperature, activation energy of the trap states in MILC poly-Si thin films was calculated to be 0.34eV.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1014-1018
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• 2007

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL