• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.1
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• pp.40-47
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• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Proceedings of the KOR-BRONCHOESO Conference
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• 1991.06a
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• pp.15-15
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• 1991

한국어 자음에 대한 생리적인 분류는 조음점 및 조음발법에 따라 다시 세분화할 수 있는데 그중에서 조음발법에 따라 파열음, 마찰음, 파찰음 및 비음들 여러가지로 분류할 수 있다. 그중 특히 파열음은 그 개방하는 방법에 따라 연음(lenis), 경음(glottalized) 및 기식음(aspirated)등으로 구분하는데 이러한 각음을 육안으로 확인하면 모음이 발성되기 위한 성대진동이 있기전의 자음을 위한 성대의 운동의 현상을 보면 기식음에서는 성대열림이 가장 크고 연음에서도 열림이 크지만 기식음보다는 적고 경음에서는 성대의 열림이 가장 작았다. 이러한 현상은 후두내시경에 의해 쉽게 확인할 수 있었는데 이것을 과학적으로 규명하기 위해서는 여러연구에 의해 가능하나 흔히 후두근전도 검사에 의한 성대내전근과 외전근의 역할의 차이를 비교함으로서 가능해지리라 예상되어 본 연구를 시행하였다. 사용된 문형 또는 단어는 한가지를 제외하고는 모두 의미있는 단어를 사용하였으며 EMG recording을 위해 사용된 근육은 후두내전근인 Vocalis muscle과 후두외전근인 Posterior cricoarytenoid muscle이 사용되었고 전기신호는 computer data processing system에 의해 분석되어졌다. 결과는 내시경에 의한 성대열림의 거리측정 결과를 분석함과 동시에 후두내근에 대한 근전도검사에 의한 분석을 토대로 하였으며 이를 간단히 설명하면 이제까지 많은 사람들은 한국어 자음에 대한 각각의 특징적인 현상들을 주로 성대내전근의 역할에 의해 규명하였으나 본 결과로는 성대내전근의 역할도 중요하지만 성대외전근의 역할 또한 상호 연관성을 가지면서 매우 중요한 역할을 한다는 점이다.for the Isotropic plates can be used. Use of some coefficients can produce "exact" value for laminates with such configuration.trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of carriers from the shallo

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.461-466
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• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1295-1297
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• 1993

Properties of oxynitride films oxidized by $N_2O$ gas after thermal oxidation and $N_2O$ oxide films directly oxidized using $N_2O$ gas on the bare silicon wafer have been studied. Through the AES analysis, Nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2O$ oxide has observed. Also, it could be presumed that there are differences in the mechanism of the growth of film by observing film growth. $N_2O$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces Si/oxynitride and Si/$N_2O$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of $N_2O$ oxide and oxynitride films has somewhat higher than those of thermal $SiO_2,\;N_2O$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• Proceedings of the Korean Geotechical Society Conference
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• 1991.10a
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• pp.87-102
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• 1991

It has been reported that the failure of Carsington Dam in Eng1and occured due to the existence of a thin yellow clay layer which was not identified during the design work, and due to pre-existing shears of the clay layer. The slope stability analyses during the design work, which utilized traditional circular arc type failure method and neglected the existence of the clay layer, showed a safety factor of 1.4. However, the post-failure analyses which utilized translational failure mode considering the clay layer and the pre-existing shear deformation revealed the reduction of safety factor to unity. The post-failure analysis assumed 10。 inclination of the horizontal forces onto each slice based on the results of finite element analyses. In this paper, Bishop's simplified method, Janbu method, and Morgenstern-Price method were used for the comparison of both circular and translational failure analysis methods. The effects of the pre-existing shears and subsquent movement were also considered by varying the soil strength parameters and the pore pressure ratio according to the given soi1 parameters. The results showed factor of safefy 1.387 by Bishop's simplified method(STABL) which assumed circular arc failure surface and disregarding yellow clay layer and pre-failure material properties. Also the results showed factor of safety 1.093 by Janbu method(STABL) and 0.969 by Morgenstern-Price method(MALE) which assumed wedge failure surface and considerd yellow clay layer using post failure material properties. In addition, dam behavior was simulated by Cam-Clay model FEM program. The effects of pore pressure changes with loading and consolidation, and strength reduction near or at failure were also considered based on properly assumed stress-strain relationship and pore pressure characteristics. The results showed that the failure was initiated at the yellow clay layer and propagated through other zones by showing that stress and displacement were concentrated at the yel1ow clay layer.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.5
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• pp.525-531
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• 2011

Exhaust gas recirculation (EGR) is more effective than selective catalytic reduction (SCR) or lean $NO_x$ trap (LNT) for the reduction of $NO_x$ emissions in diesel engines. A large amount of EGR gas is necessary to satisfy the stringent regulations on $NO_x$ emissions. Low pressure loop (LPL) EGR is almost independent of the variable geometry turbocharger (VGT) at a specific boost pressure, so LPL EGR is better than conventional high pressure loop (HPL) EGR in terms of EGR supply. We compare the influence of HPL EGR and LPL EGR on the combustion characteristics at a constant boost pressure in a diesel engine. The dilution ratio was employed as an independent parameter to analyze the effect of the dilution of the intake charge for each EGR loop. At the same level of $NO_x$ emissions, the fuel consumption and smoke opacity were slightly lower for LPL EGR than for HPL EGR.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 1991.06a
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• pp.37-44
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• 1991

영산강 하구언 방조제의 건설로 인한 항만 및 이의 인접해역 해면의 변화는 예상한 바 있으며 실제 여러개소에서 월 2회정도의 주기로 목포 구항부근 상업지역에서 해면상승에 따라 주기적으로 침수되는 현상이 나타나고 있다 목포항의 영산강 하구언 방조제 조성으로 인한 조류성분중 최고기록을 가진 수로에서는 6kts 정도로 감소된 것으로 보고되고 있으나 주위자연환경 변화에 따른 수면 상승 및 해수면의 주기적인 변화 등에 대한 상세한 언급 및 깊이 있는 분석은 회피되어왔다. 수자원의 효율적관리를 위해 하구언 방조제는 이미 건설되었고 앞으로 대규모의 항만개발과 대불산업단지조성을 위해 추가 3개의 만입해안해역에 댐으로 해역을 막아 매립공사를 추진하고 있다 그러나 이 지역에 대한 분석은 타당성의 여부만을 강조한 상업적 용역이 이루어지고 있고 장래 개발에 대해 학술적이고 실질적인 문제점 추출과 해결방아네 대해서는 무시하거나 경시한 바가 많다 더구나 태풍 저기압 등과 같은 자연재해를 고려한 분석은 시도되지 못하고 있다 따라서 개발전후의 현상에 대한 상세한 자료 및 현장 조사와 극한 상태를 고려하여 개발에 따른 수위상승 부진동, 조류 수질등 이해역의 변화요소를 수집하고 분석하며 과학적 접근방법에 기초를 둔 수치모델의 실험을 포함하여 현장관측 및 측정자료를 검증하는 것이 필수적이라고 사료되어 종합분석의 한단계로 여기서는 하구언 및 하구간척(Land Reclamatic of Estuary barren)으로 해역축소에 따른 해면변화의 실제현상을 조사하여 정리하고 이를 수치모델을 통해 시뮬레이션하여 보았다 이는 종합개발의 좋은 기초자료로 이용됨은 물론이로 이지역의 개발에 기여할 것으로본다.적절하게 가정된 지반의 응력-변형률 관계와 간극수압특성에 의하여 고려되었다. 그 결과 응력 및 변위가 심하게 발생하는 지역은 황색 점토층이었으며 이로부터 황색 점토층에서 부터 파괴면이 생성되어 다른 지역으로 전파되었음을 유추할 수 있었다.form trap with 2.88[eV] deep of injected space charge from the chathode in the crystaline regions. The origin of ${\alpha}$$_2$ peak was regarded as the detrapping process of ions trapped with 0.9[eV] deep originated from impurity-ion remained in the specimen during production process of the material, in the crystalline regions. The origin of ${\beta}$ peak was concluded to be due to the depolarization process of "C=0"dipole with the activation energy of 0.75[eV] in the amorphous regions. The origin of ${\gamma}$ peak was responsible to the process combined with the depolarization of "CH$_3$", chain segment, with the activation energy of ca

• Korean Chemical Engineering Research
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• v.60 no.1
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• pp.93-99
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• 2022

With the rapid development of ultra-small and wearable device technology, continuous electricity supply without spatiotemporal limitations for driving electronic devices is required. Accordingly, Triboelectric nanogenerator (TENG), which utilizes static electricity generated by the contact and separation of two different materials, is being used as a means of effectively harvesting various types of energy dispersed without complex processes and designs due to its simple principle. However, to apply the TENG to real life, it is necessary to increase the electrical output. In addition, stable generation of electrical output, as well as increase in electrical output, is a task to be solved for the commercialization of TENG. In this study, we proposed a method to not only improve the output of TENG but also to stably represent the improved output. This was solved by using the contact layer, which is one of the components of TENG, as an electret for improved output and stability. The utilized electret was manufactured by sequentially performing corona charging-thermal annealing-corona charging on the Fluorinated ethylene propylene (FEP) film. Electric charges artificially injected due to corona charging enter a deep trap through the thermal annealing, so an electret that minimizes charge escape was fabricated and used in TENG. The output performance of the manufactured electret was verified by measuring the voltage output of the TENG in vertical contact separation mode, and the electret treated to the corona charging showed an output voltage 12 times higher than that of the pristine FEP film. The time and humidity stability of the electret was confirmed by measuring the output voltage of the TENG after exposing the electret to a general external environment and extreme humidity environment. In addition, it was shown that it can be applied to real-life by operating the LED by applying an electret to the clap-TENG with the motif of clap.