• Journal of Korean Medicine Rehabilitation
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• v.30 no.3
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• pp.23-44
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• 2020

Objectives The purpose of this study is to evaluate the healing effect of Hyeolbuchugeo-tang (HC) in rats with rib fracture. Methods Rats were randomly divided into 5 groups (naive, control, positive control, HC-L and HC-H). All groups except naive group were subjected to bone fracture of rib. Naive group received no treatment at all. Control group was fed with phosphate buffered saline. Positive control group was orally medicated with tramadol. Experimental group was orally medicated with HC extract (50 mg/kg for low concentration [HC-L], 100 mg/kg for high concentration [HC-H]). X-ray and micro-computed tomography (micro-CT) were conducted to assess the effect of HC. We analysed the level of 2) transforming growth factor-β1 (TGF-β1), Ki67, alkaline phosphatase (ALP), receptor activator of nuclear factor kappa-β, runt-related transcription factor 2 (Runx2) and tartrate resistant acid phosphatase (TRAP) on 7 and 14 days after fracture. ALP, alanine aminotransferase, aspartate aminotransferase, blood urea nitrogen, creatinine was measured for safety assessment. Results X-ray and micro-CT, showed HC enhance bone repair process. Callus formation was increased in experimental group at 7 days after fracture, but decreased at 14 days after fracture. 7 days after fracture, the level of TGF-β1 in experimental group was decreased. The level of Ki67, Runx2 in HC-H, TRAP in HC-L was increased. 14 days after fracture, the level of Ki67 in HC-L and HC-H was decreased. The level of ALP, Runx2, BUN in HC-L, TRAP in HC-L and HC-H was increased. Conclusions Taken together the results, HC promoted healing of bone fracture. In conclusion, HC has a potential to promote healing of bone fracture.

• ETRI Journal
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• v.15 no.2
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• pp.11-25
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• 1993

Interface trap densities at gate oxide/silicon substrate ($SiO_2/Si$) interfaces of metal oxide semiconductor field-effect transistors (MOSFETs) were determined from the substrate bias dependence of the subthreshold slope measurement. This method enables the characterization of interface traps residing in the energy level between the midgap and that corresponding to the strong inversion of small size MOSFET. In consequence of the high accuracy of this method, the energy dependence of the interface trap density can be accurately determined. The application of this technique to a MOSFET showed good agreement with the result obtained through the high-frequency/quasi-static capacitance-voltage (C-V) technique for a MOS capacitor. Furthermore, the effective substrate dopant concentration obtained through this technique also showed good agreement with the result obtained through the body effect measurement.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2461-2466
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• 2003

This paper presents a simple sensor fusion algorithm using neural network for navigation of mobile robots with obstacle avoidance and trap recovery. The multiple sensors input sensor data to the input layer of neural network activating the input nodes. The multiple sensors used include optical encoders, ultrasonic sensors, infrared sensors, a magnetic compass sensor, and GPS sensors. The proposed sensor fusion algorithm is combined with the VFH(Vector Field Histogram) algorithm for obstacle avoidance and AGPM(Adaptive Goal Perturbation Method) which sets adaptive virtual goals to escape trap situations. The experiment results show that the proposed low-level fusion algorithm is effective for real-time navigation of mobile robot.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.54-57
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• 1995

This study is to investigate the switching charac-teritics in the5V-programmable scaled MONOS nonvolatile memory devices, Modified Folwer-Nordheim tunneling mechanism become important when the electric field in the tunneling oxide is 6 MV/cm for E$\_$OT/ <6MV/cm the trap-assisted tunneling mechanism is dominant, The density of nitride bulk trap is found to be N$\_$T/=7.7${\times}$10$\^$18/ cm$\^$-3/ and the energy level of trap is determined to be ø$\_$T/=0.65 eV.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.530-537
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• 2004

Development of a versatile nanomanipulation tool is an overarching theme in nanotechnology. Such a tool will likely revolutionize the field given that it will enable fabrication and operation of a wealth of interesting nanodevices. This study seeks funding to create a novel nanomanipulation system with the ultimate goal of using this system for nanomanufacturing at the molecular level. The proposed design differs from existing approaches. It is based on a nanoscale ion trap integrated to a scanning prove microscope (SPM) tip. In this design, molecules to be assembled will be ionized and collected in the nanoscale ion trap all in an ultra high vacuum (UHV) environment. Once filled with the molecular ions, the nanoscale ion trap-SPM tip will be moved on a substrate surface using scanning probe microscopy techniques. The molecular ions will be placed at their precise locations on the surface. By virtue of the SPM, the devices that are being nanomanufactured will be imaged in real time as the molecular assembly process is carried out. In the later stages, automation of arrays of these nanomanipulators will be developed.

• Korean Journal of Materials Research
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• v.34 no.2
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.65-68
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• 2000

Polyethylene, has long history and is widely used, was researched due to good electrical properties by many authors. But PE under stress has the critical defects of space charge accumulation and tree growth, so various methods such as catalyst, additives and blend to improve these problems have been execute, of which we selected blending method. As in our previous papers we investigated electrical conduction, dielectric and AC dielectric breakdown characteristics, we did DC dielectric breakdown characteristics in this paper. We selected pure LLDPE, pure EVA and LLDPE films mixed with EVA as specimens, which were mixed with the weight percentages of 50, 60, 70 and 80[wt%] to be thin film. DC applying voltage speed was 500[V/sec]. The relation between dielectric breakdown characteristics and the variations of super structure due to mixing was investigated, and especially trap level at amorphous region, threshold energy increment of conductive electron at free volume were considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.40-43
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• 1991

The low-voltage ZnO varistor fabricated by a new method with three-composition seed grain are studied. The knee voltage about 5V$\_$0.5[A/$\textrm{cm}^2$]/ for sample #7 among the various samples are observed, and activation energy in the obmic region and trap level in the double sohottky region for each samples are 0.359∼0.450eV and 0.553∼0.620eV, respectively. It is concluded that the change of knee voltage may be caused by trap level in double sohottky region rather than activation energy in the ohmic region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.248-252
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• 1995

In this paper, the samples are made by the new three-composition seed grain method, in order to obtain the low voltage varistor distributed randomly large seed grain in its bulk. The oscillation phenomena of carriers appeared from current-voltage characteristics under knee voltage is shown by the transient flow of non trapped carriers group in the trap level of intergranular layer, surface state and/or depletion layer. Current oscillation phenomena is hardly shown in the high electric field. The injected carriers from both electrodes are directly flowed from the conduction band of forward biased grain through the intergranular layer into the reverse biased grain, because the trap level in the electric field above the knee voltage is mostly filled.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.7-14
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• 1994

Structural and optical characteristics in $SnO_2$/a-Se/Al sample by aging variation and applying constant voltage had been investigated. a-Se was varied with monoclinic structure and its surface was greatly exchanged. Its capacitance was first decreased and then increased and its photo-current, photo-voltage and photo-capacitance were increased gradually with day and applying voltage. From the results, crystallization of a-Se and dopant trap level formation had been identified. Also, it was acknowledged $SnO_2$/a-Se/Al sample is useful in photovoltaic and solid thin film cell.