Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1995.05a
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- Pages.54-57
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- 1995
Switching characteristics of the Scaled MONOS Nonvolatile Memory Devices
Scaled MONOS 비휘발성 기억소자의 스위칭 특성
Abstract
This study is to investigate the switching charac-teritics in the5V-programmable scaled MONOS nonvolatile memory devices, Modified Folwer-Nordheim tunneling mechanism become important when the electric field in the tunneling oxide is 6 MV/cm for E
Keywords