• Korean Journal of Environment and Ecology
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• v.36 no.4
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• pp.361-367
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• 2022

This study was conducted to identify annual variation of observation and activity pattern of Korean chipmunk (Tamias sibiricus) using camera traps in the Seoraksan and Jirisan National Parks, South Korea from May 2019 to May 2021. The annual variation was identified based on the observed frequency through weekly observations. Daily activity patterns of the species were also analyzed by season. The daily activity pattern of chipmunk appeared to be constantly diurnal across the years regardless of habitat or season. The Korean chipmunks living in the two different regions were observed in different time periods throughout the year. While the chipmunks inhabiting the Seoraksan were observed from 18^th to 45^th week, the chipmunks inhabiting the Jirisan National Park were observed from 7^th to 48^th week. This may be influenced by the hibernation period of chipmunks in the two different regions. In both regions, chipmunks were most frequently observed in autumn. It is considered that seasonal variation on population dynamic and activity patterns of chipmunks were reflected in the observation frequency. Although the observation frequency of camera trap is an indirect indicator and thus having a limitation that it cannot distinguish the population density and amount of activity for the target species, camera trapping is still an effective survey technique for monitoring mammals due to its high accessibility and easy use.

• Korean Journal of Environment and Ecology
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• v.35 no.6
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• pp.621-631
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• 2021

The purpose of this study is to survey and analyze acorn production and characteristics of the Quercus acuta Thunb. according to the need for information on seed supply and seedling cultivation during the restoration of warm broad-leaved forests. For the survey, a total of 30 seed traps with a surface area of 1 m² were set up, 3 in each of 10 quadrats (8 in Wando, 1 in Haenam, and 1 in Jindo). The acorns that fell in the seed trap at the end of each month were collected from August to December each year between 2013 to 2016. The collected acorns were then classified into sound, damaged, decayed, or empty grade, and the number of acorns produced was calculated. In the case of sound acorns, acorn traits, such as length, diameter and weight of acorns without cupule, were measured. Duncan's multiple tests of acorn production and characteristics were conducted for comparative analysis of the annual average values with the values by year, stand, month, and treatment plot. The annual number of acorn dropped into the seed traps in each quadrat from 2013 to 2016 was 5-350 acorns/3 m² in 2013, 17-551 acorns/3 m² in 2014, 5-454 acorns/3 m² in 2015, and 14-705 acorns/3 m² in 2016. There was a large difference in acorn production between the quadrats, presumably attributed to the difference in the amount of light received due to the density of trees in the square. Annual acorn production per area was 335,000 acorns/ha in 2013, 932,000 acorns/ha in 2014, 556,000 acorns/ha in 2015, and 1,037,000 acorns/ha in 2016. That was a sharp variation of acorn production in the two-year cycle. As the fluctuation in the production of Q. acuta showed simultaneity between stands, it is judged that Quercus acuta Thunb. had a clear cycle of fruitfulness and fruitiness between forest objects. September showed the biggest amount of fallen acorns and largest damage from insect pests, indicating that preventing early fall of acorns could increase the fruiting period and enable mass production of sound acorns. There was no significant difference between annual average acorn length in each region. In the case of the acorn diameter and weight, the average values of acorns from Haenam were significantly higher than those from Wando and Jindo. There was no significant difference in the average annual acorn characteristics by month, and the average annual acorn length, diameter, and weight in November were 19.72mm, 12.23mm, and 1.64g, respectively, the highest between August and November.

• Korean journal of applied entomology
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• v.55 no.4
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• pp.329-336
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• 2016

Occurrence of oriental corn borer, Ostrinia furnacalis, and yield in a paddy-upland rotation field for 8 maize (Eolrukchal 1, Heugjeom 2, Miheukchal, Ilmichal, Heukjinjuchal, Chalok 4, Mibaek 2, Daehakchal) and 7 sorghum (Hwanggeumchal, Anzunbaengisusu, Moktaksusu, Sodamchal, DS-202, Nampungchal, Donganme) varieties has been surveyed. In a monitoring study using a pheromone trap carried out from 15 May to 10 September, the density of O. furnacalis adults increased rapidly from about 2 weeks after maize planting and reached the highest density at mid June. After that, their density was fluctuated a little at earlier September. The number of the damaged maize and invasive pores on the stem of 2 maizes and sorghum varieties was examined. The mean number of the damaged maize per 20 plants was 19 and 18 plants, and the number of invasive pores was 1.8 and 1.4 per maize stem in Daehakchal and Mibaek 2, respectively. In a survey carried out at harvest period using 8 maize varieties, the damaged ratio was 94%, 92%, 71%, 64%, 54%, 52%, and 45% in Daehakchal, Mibaek 2, Ilmichal, Eolrukchal 1, Chalok 4, Miheukchal, and Heugjeom 2, respectively. The number of invasive pore per Ilmichal stem was 1.4 and that of the others was less than 1.0 per stem. In addition, the damaged ratio of maize ears was 50% in Ilmichal, 40% in Heukjinjuchal, 37% in Daehakchal, etc. The damage pattern of 2 sorghum varieties, Nampungchal and Donganme, by O. furnacalis larvae was steeply increased from planting to 2 months and the trend was continued up to earlier August. At this time, the mean number of damaged sorghum was 13 and 9.2 plants for Nampungchal and Donganme, and the number of invasive stem pores was 1.06 and 0.46, respectively. In another survey carried out at harvest period for 7 sorghum varieties, their damaged ratio was 95% in DS-202, 76% in Moktaksusu, 75% in Sodamchal, 67% in Nampungchal, 57% in Anzunbaengisusu, 46% in Donganme, and 34% in Hwanggeumchal. The damage of sorghum varieties was much higher and severer than that of maizes by O. furnacalis larvae. The number of invasive pores on a sorghum stem was 1.7 in DS-202, 1.4 in Moktaksusu, 1.3 in Sodamchal, 1.1 in Nampungchal, 1.0 in Anzunbaengisusu, 0.5 in Donganme, and 0.4 in Hwanggeumchal. Meanwhile, there was no distinct connection between damaging results and yields of maizes and sorghums by O. furnacalis larvae in a paddy-upland rotation field. These results from this study can be applicable for the establishment of a management strategy to control Oriental corn borer in paddy-upland rotation fields for maize and sorghum.

• Ecology and Resilient Infrastructure
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• v.4 no.1
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• pp.44-53
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• 2017

In order to investigate the response in fauna and biological communities of terrestrial insects to the vegetation encroachment on the sandbar, species composition, species diversity, functional species traits and community structure of land-dwelling insects sampled by a pit-fall trap were compared at the bare and vegetated sandbar of a typical sand-bed stream, the Naeseong Stream, Korea. Species diversity of the insects was increased but their density was decreased as the riparian vegetation encroached at the sandbar. In particular, indicator species of bare sandbar such as Cicindela laetescripta and Dianemobius csikii, were found at the bar sandbar. The insect communities were clearly classified at the bare and vegetated sandbar according to coverages of riparian plants. The food web of the bare sandbar was composed of detritus - detritivore and scavenger - predator consisted mainly of Coleoptera. On the other hand, the food web of the vegetated sandbar was composed of plants - sucking and chewing herbivore - parasitoid and predator. These results showed that biodiversity of terrestrial insects was increased, food web was changed from grazing to detritus food chain, and insect fauna specific bare sandbar disappeared as the riparian vegetation invaded on the sandbar of a sand-bed stream.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.91-96
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• 2005

The silicon-on-insulator (SOI) wafer fabrication technique has been developed by using ion-cut process, based on proton implantation and wafer bonding techniques. It has been shown by SRIM simulation that 65keV proton implantation is required for a SOI wafer (200nm SOI, 400nm BOX) fabrication. In order to investigate the optimum proton dose and primary annealing condition for wafer splitting, the surface morphologic change has been observed such as blistering and flaking. As a result, effective dose is found to be in the $6\~9\times10^{16}\;H^+/cm^2$ range, and the annealing at $550^{\circ}C$ for 30 minutes is expected to be optimum for wafer splitting. Direct wafer bonding is performed by joining two wafers together after creating hydrophilic surfaces by a modified RCA cleaning, and IR inspection is followed to ensure a void free bonding. The wafer splitting was accomplished by annealing at the predetermined optimum condition, and high temperature annealing was then performed at $1,100^{\circ}C$ for 60 minutes to stabilize the bonding interface. TEM observation revealed no detectable defect at the SOI structure, and the interface trap charge density at the upper interface of the BOX was measured to be low enough to keep 'thermal' quality.

• Journal of the Korean Vacuum Society
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• v.16 no.3
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• pp.197-204
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• 2007

Ultra thin Er-silicide layers formed by Er deposition on the clean p-silicon and in situ post annealing technique were investigated with respect to change of the Schottky barrier height. The formation of Er silicides was confirmed by XPS results. UPS measurements revealed that the workfunction of the silicide decreased and was saturated as the deposited Er thickness increased up to $10{\AA}$. We found that the silicides were mainly composed of Er5Si3 phase through the XRD experiments. After Schottky diodes were fabricated with the Er silicide/p-Si junctions, the Schottky barrier heights were calculated $0.44{\sim}0.78eV$ from the I-V measurements of the Schottky diodes. There was large discrepancy in the Schottky barrier heights deduced from the UPS with the ideal junction condition and the real I-V measurements, so that we attributed the discrepancy to the $Er_5Si_3$ phase in the Er-silicides and the large interfacial density of trap state of it.

• Nuclear Engineering and Technology
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• v.24 no.2
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• pp.141-153
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• 1992

Excess tritium analysis was peformed to verify whether or not cold fusion occurs during electrolysis of heavy water in the current density range of 83~600 mA/$\textrm{cm}^2$ for a period of 24 ~ 48 hours with use of palladium electrodes of seven different processing treatments and geometries. The extent of recombination of D$_2$ and $O_2$gases in the electrolytic cell was measured for the calculation of accurate enthaplpy values. The behavior and interaction of hydrogen atoms with defects in Pd electrodes were examined using the Sieverts gas charging and the positron annihilation(PA) method. Slight enrichment of tritium observed was attributed to electrolytic enrichment but not to the formation of a by-product of cold fusion. The extent of recombination of D$_2$and $O_2$gases was 32%. Hence the excess heat measured during the electrolysis was considered to be due to the exothermic reaction of recombination but not to nuclear fusion. Lifetime results from the PA measurements on the Pd electrodes indicated that hydrogen atoms could be trapped at dislocations and vacancies in the electrodes and that dislocations were slightly more preferred sites than vacancies. It was also inferred from R parameters that the formation of hydrides was accompanied by generation of mostly dislocations. Doppler broadening results of the Pd electrodes indicated that lattiec defect sites where positrons were trapped first increased and then decreased, and this cycle was repeated as electrolysis continued. It can be inferred from PA measurements on the cold-rolled Pd and the isochronally annealed Pd hydride specimens that microvoid-type defects existed in the hydrogen-charged electrode specimen.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.942-948
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• 2010

In this study we aims to examine the effects of 0.5 mol% $Cr_2O_3$ addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-$Bi_2O_3-Sb_2O_3$ (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore ($Zn_2Bi_3Sb_3O_{14}$) was decomposed more than $100^{\circ}C$ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to $800^{\circ}C$ by unknown Bi-rich phase produced at $700^{\circ}C$. Pyrochlore on cooling was reproduced in all systems. And $Zn_7Sb_2O_{12}$ spinel ($\alpha$-polymorph) and $\delta-Bi_2O_3$ phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient $\alpha$ = 7~12) and independent on microstructure according to Sb/Bi ratio. Doping of $Cr_2O_3$ to ZBS seemed to form $Zn_i^{..}$(0.16 eV) and $V^{\bullet}_o$ (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

• The Journal of Engineering Geology
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• v.20 no.3
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• pp.281-295
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• 2010

A new, automated apparatus is proposed for calculating the Soil-Water Characteristic Curve (SWCC), representing a simple and easily applied testing device for continuous measurements of the volumetric water content and suction of unsaturated soils. The use of this apparatus helps to avoid the errors that arise when performing experiments. Consequently, the apparatus provides greater accuracy in calculating the SWCC of unsaturated soils. The apparatus is composed of a pressure panel, flow cell, water reservoir, air bubble trap, balance, sample-preparation accessories, and measurement system, among other components. The air pressure can attain 300 kPa, and a general test can be completed in a short time. The apparatus can simply control the drying process and wetting process. The changes in volumetric water content that occur during the drying and wetting processes are shown directly in the SWRC program, in real time. As a case study, we performed an SWCC test of Joomunjin sand (75% relative density) to measure matric suction and volumetric water content during both the drying and wetting processes. The test revealed hysteresis behavior, whereby the water content on the wetting curve is always lower than that on the drying curve for a specific matric suction, during the wetting and drying processes. Based on the test results, SWCCs were estimated using the Brooks and Corey, van Genuchten, and Fredlund and Xing models. The van Genuchten model performed best for the given soil conditions, as it yielded the highest coefficient of determination.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.120-120
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• 2011

Graphene is a carbon based material and it has great potential of being utilized in various fields such as electronics, optics, and mechanics. In order to develop graphene-based logic systems, graphene field-effect transistor (GFET) has been extensively explored. GFET requires supporting devices, such as volatile memory, to function in an embedded logic system. As far as we understand, graphene has not been studied for volatile memory application, although several graphene non-volatile memories (GNVMs) have been reported. However, we think that these GNVM are unable to serve the logic system properly due to the very slow program/read speed. In this study, a GVM based on the GFET structure and using an engineered graphene channel is proposed. By manipulating the deposition condition, charge traps are introduced to graphene channel, which store charges temporarily, so as to enable volatile data storage for GFET. The proposed GVM shows satisfying performance in fast program/erase (P/E) and read speed. Moreover, this GVM has good compatibility with GFET in device fabrication process. This GVM can be designed to be dynamic random access memory (DRAM) in serving the logic systems application. We demonstrated GVM with the structure of FET. By manipulating the graphene synthesis process, we could engineer the charge trap density of graphene layer. In the range that our measurement system can support, we achieved a high performance of GVM in refresh (>10 ${\mu}s$) and retention time (~100 s). Because of high speed, when compared with other graphene based memory devices, GVM proposed in this study can be a strong contender for future electrical system applications.