• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.1
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• pp.37-43
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• 2020

This study proposes a 7kW low-voltage DC-DC converter (LDC) using a coupled inductor (CI) for heavy hydrogen electric transport vehicles. The LDC uses a phase-shift manner for soft switching. SiC-MOSFET is used to reduce the loss of reverse recovery current through the use of a high switching frequency. LDC is require large transformer and inductor because of large output current. The size of transformer and inductor can be reduced by deviding the transformer and inductor into two pieces each. This work presents the experimental results of the proposed circuit.

• Nuclear Engineering and Technology
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• v.46 no.1
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• pp.39-46
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• 2014

A total loss of all heat sinks is considered a severe accident with a low probability of occurrence. Following a total loss of all heat sinks, the degasser/condenser relief valves (DCRV) become the sole means available for the depressurization of the primary heat transport system. If a nuclear power plant has a total loss of heat sinks accident, high-temperature steam and differential pressure between the primary heat transport system (PHTS) and the steam generator (SG) secondary side can cause a SG tube creep rupture. To protect the PHTS during a total loss of all heat sinks accident, a sufficient depressurization capability of the degasser/condenser relief valve and the SG tube integrity is very important. Therefore, an accurate estimation of the discharge through these valves is necessary to assess the impact of the PHTS overprotection and the SG tube integrity of the primary circuit. This paper describes the analysis of DCRV discharge capacity and the SG tube integrity under a total loss of all heat sink using the CATHENA code. It was found that the DCRV's discharge capacity is enough to protect the overpressure in the PHTS, and the SG tube integrity is maintained in a total loss of all heat accident.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.23 no.1
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• pp.146-152
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• 2024

This paper presents the analysis and the design methods of the crossover junctions including the output phase. The general solutions were derived analytically through an even-odd analysis of the reflection coefficients and the impedance parameters for the crossover junction with arbitrary output phase. The general solutions were applied to a real crossover junction structure to derive the exact design formula for the arbitrary output phase. The results agreed well with the existing studies. The designed circuit satisfied the crossover junction operation with the exact output phase.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.3
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• pp.95-100
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• 2004

This paper reports a potential problem in the electrical performance of the silicide film to silicon contacts with respect to the scaling trend in integrated circuit (IC) devices. The effects of elastic strain on the agglomeration of the coherent silicide film embedded in an infinite matrix are studied employing continuum linear elasticity and finite-difference numerical method. The interface atomic diffusion is taken to be the dominant transport mechanism where both capillarity and elastic strain are considered for the driving forces. Under plane strain condition with elastically homogeneous and anisotropic system with cubic symmetry, the dilatational misfit and the tetragonal misfit in the direction parallel to the film thickness are considered. The numerical results on the shape evolution agree with the known trend that the equilibrium aspect ratio of the film increases with the elastic strain intensity. When the elastic strain intensity is taken to be only a function of the film size, the flat film morphology with a large aspect ratio becomes increasingly unstable since the equilibrium aspect ratio decreases, as the film scales. The shape evolution results in a large decrease in contact to silicon area, and may deteriorate the electrical performances.

• Current Photovoltaic Research
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• v.6 no.2
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• pp.43-48
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• 2018

The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

• Journal of the Korean Operations Research and Management Science Society
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• v.22 no.2
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• pp.13-29
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• 1997

This paper considers a new routing problem, successive max-min connection ratio problem (SMCRP), arised in circuit telecommunication networks such as SONET and WDM optical transport network. An optimization model for SMCRP is established based on link-flow formulation. It's first optimization process is an integral version of maximum concurrent flow problem. Integer condition does not give the same connection-ratio of each node-pair at an optimal solution any more. It is also an integral multi-commodity flow problem with fairness restriction. In order to guarantee fairness to every node-pair the minimum of connection ratios to demand is maximized. NP- hardness of SMCRP is proved and a heuristic algorithm with polynomial-time bound is developed for the problem. Augmenting path and rerouting flow are used for the algorithm. The heuristic algorithm is implemented and tested for networks of different sizes. The results are compared with those given by GAMS/OSL, a popular commercial solver for integer programming problem.n among ferrite-pearlite matrix, the increase in spheroidal ratio with increasing fatigue limitation, 90% had the highest, 14.3% increasing more then 70%, distribution range of fatigue.
ife was small in same stress level. (2) $\sqrt{area}_{max}$ of graphite can be used to predict fatigue limit of Ductile Cast Iron. The Statistical distribution of extreme values of $\sqrt{area}_{max}$ may be used as a guideline for the control of inclusion size in the steelmaking.

• Korean Journal of Materials Research
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• v.13 no.5
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• pp.313-316
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• 2003

The new epitaxial base cell as a high efficiency Si solar cell was fabricated and the effect of buried contact on the cell characteristics was investigated. In our experiments, the cell with buried contact showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 10% under the incident light of AM-1 100 ㎽/$\textrm{cm}^2$. The insertion of buried contact in the epitaxial base structure brought the fabricated cell to the efficiency improvement of about 33%. The cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $p^{－}$ $p^{+}$ epitaxial base, and the reduction of emitter series resistance by n＋ buried contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.243-244
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• 2008

We experimentally investigated discharge phenomena inside vacuum interrupter at 1 to 20 Torr to simulate the vacuum leakage. We used glass type of vacuum interrupter where the internal pressure and the type of gasses can be varied according to requirement. The experiment is conducted under ac applied voltage and the experimental circuit is constructed to simulate the actual circuit used in cubical type insulated switchgear. We used two types of gases such as air and $SF_6$. The use of glass type vacuum interrupter allowed us to measure discharges occurring in vacuum interrupter optically. We measured and discussed the discharge occurring in both gases with a current transformer and ICCD camera. We a1so revealed that electromagnetic wave spectra emitted by the discharge have same frequency range for both gasses.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.33-37
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• 2003

The new textured surface epitaxial base(TSEB) cell as a high efficiency Si solar cell was fabricated and its eletro-optical characteristics were investigated. The fabricated device showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 16% under the incident light of AM-1 100 mW/$cm^2$. The TSEB cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $P^-/P^+$ epitaxial base, and the low emitter series resistance by insertion of $n^+$ buried contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04b
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• pp.20-21
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• 2008

Photovoltaic effects in organic solar cell were studied in a cell configuration of ITO/PEDOT:PSS/CuPd(20nm)/$C_{60}$(40nm)/BCP/Al(150nm) at room temperature. Here, the BCP layer works as an exciton blocking layer. The exciton blocking layer must transport electrons from the acceptor layer to the metal cathode with minimal increase in the total cell series resistance and should absorb damage during cathode deposition. Therefore, a proper thickness of the exciton blocking layer is required for an optimized photovoltaic cell. Several thicknesses of BCP were made between $C_{60}$ and Al. And we obtained characteristic parameters such as short-circuit current, open-circuit voltage, and power conversion efficiency of the device under the illumination of AM 1.5.