• 한국세라믹학회지
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• 제45권3호
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• pp.161-166
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The metal nitride film formed on the stainless steel bipolar plates represented a microstructural morphology of fine columnar grains with 10 nm diameter and 60nm length in FE-SEM images. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 한국진공학회지
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• 제18권5호
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• pp.394-401
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• 2009

본 논문은 ZnO 분말 타겟을 스퍼터링하여 glass 기판 위에 증착한 ZnO 박막의 구조적, 광학적 특성을 보고한다. 소결된 ZnO ceramic target을 사용하는 보통의 radio-frequency magnetron sputtering과 달리 본 연구에서는 전처리과정이 필요하지 않은 ZnO 분말 target을 사용하였다. ZnO 박막은 wurtzite (0002) 우선배향면으로 성장하였다. 초기의 ZnO 박막은 매우 평평한 층구조로 증착되었고, 두께가 증가함에 따라 섬구조로 전이하였다. 400-1000 nm 광원에 대하여 평균 88% 이상의 광투과도를 나타내었으며, 220 nm 시편의 경우, 3.23 eV의 near bandedge emission 흡수단을 측정하였다.

• 한국세라믹학회지
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• 제43권9호
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• pp.532-536
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• 2006

The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.

• 한국세라믹학회지
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• 제29권10호
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• pp.822-826
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• 1992

SiO2 doped sapphire single crystals were grown by Verneuil method using feed material which prepared by adding SiO2 in Al2O3. Crystal growing were attempted with varing doping amount of SiO2 from 0.01 to 1.0 wt% and when the doping amount of SiO2 were 0.01~0.04 wt%, single crystals could be attained. Starting materials for feed powder were 99.99% purity alumina and extra pure SiO2 powder. Mixing these two materials by wet milling for 24 hours and drying the mixture and then was calcined at 900~110$0^{\circ}C$ for 2~4 hours. The grown crystals had yellowish color and were somewhat transparent. During growing process the flow range of oxygen was 5~7.5ι/min and of hydrogen was 13~25ι/min, the average growth rate was 7.0~11 mm/hr. The pressure of gases were fixed at 5psi. The color of crystal was appeared and mechanical property of sapphire was developed by doping of SiO2.

• 한국세라믹학회지
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• 제52권3호
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• pp.224-227
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• 2015

In this work, the properties of Indium-Zinc-Tin-Oxide (IZTO) thin films, deposited on polyethylene naphthalate (PEN) with a $SiO_2$ buffer layer, were analyzed with different working pressures. After depositing the $SiO_2$ buffer layer on PEN substrates by plasma-enhanced chemical vapor deposition (PECVD), the IZTO thin films were deposited by RF magnetron sputtering with 1 to 7-mTorr working pressure. All the IZTO thin films show an amorphous structure, regardless of the working pressure. The best morphological, electrical, and optical properties are obtained at 3-mTorr working pressure, with a surface roughness of 2.112-nm, a sheet resistance of $8.87-{\Omega}/sq$, and a transmittance at 550-nm of 88.44%. These results indicate that IZTO thin films deposited on PEN have outstanding electrical and optical properties, and the PEN plastic substrate is a suitable material for display devices.

• 한국전기전자재료학회논문지
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• 제31권7호
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• pp.510-514
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• 2018

This study discusses and demonstrates the structural stability of highly ordered Pt patterns formed on a transparent and flexible substrate through the process of nanotransfer printing (nTP). Bending tests comprising approximately 1,000 cycles were conducted for observing Pt line patterns with a width of $1{\mu}m$ formed along the direction of the horizontal (x-axis) and vertical (y-axis) axes ($15mm{\times}15mm$); and adhesion tests were performed with an ultrasonicator for a period greater than ten minutes, to analyze the Pt crossbar patterns. The durability of both types of patterns was systematically analyzed by employing various microscopes. The results show that the Pt line and Pt crossbar patterns obtained through nTP are structurally stable and do not exhibit any cracks, breaks, or damages. These results corroborate that nTP is a promising nanotechnology that can be applied to flexible electronic devices. Furthermore, the multiple patterns obtained through nTP can improve the working performance of flexible devices by providing excellent structural stability.

• 한국세라믹학회지
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• 제27권5호
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• pp.583-588
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• 1990

Glass films in the binary system B2O3-SiO2 and Al2O3-SiO2 were prepared on soda-lime-silica slide glass by the dip-coating technique from TEOS and boric acid or aluminum nitrate. Thickness of the films varying with viscosity and withdrawal speed were measured and effect of composition and firing temperature on the properties such as transmittance and refractive index were investigated. nM2O3.(100-n)SiO2(M=B or Al) films containing up to 20mol% B2O3 and 40mol% Al2O3 were transparent. Maximum transmittance at visible range were obtained for the sample containing 15mol% Ba2O3 and 32.5mol% Al2O3 and heat-treated at 50$0^{\circ}C$, respectively. Refractive index of the film containing 15mol% B2O3 was mininum in the B2O3-SiO2 binary system and minimal refractive index was appeared at the film containing 32.5mol% Al2O3. In IP spectra, addition of B2O3 were increased absorption peak intensity of B-O and Si-O-B bond and addition of Al2O3 were decreased absorption peak intensity of Si-O bond, respectively.

• Journal of Ceramic Processing Research
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• 제20권1호
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• pp.59-62
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• 2019

Y2O3-MgO nanocomposites are promising materials for hypersonic infrared windows and domes due to their excellent midIR transmittance and mechanical properties. In this work, influence of SPS heating rate on the microstructure, IR transmittance, and mechanical properties of Y2O3-MgO nanocomposites was investigated. It was found that the average grain size decreases with a decreasing heating rate, which can be attributed to high defect concentration by rapid heating and deformation during densification. Also, the residual porosity decreases with a decreasing heating rate, which is ascribed to the enhancement of grain boundary diffusion by a large grain-boundary area (a small grain size). Consequently, high transmittance and hardness were attained by the low heating rate. On the other hand, the mechanical strength showed little difference with the heating rate change, which is somewhat different from the general knowledge on ceramics and will be discussed in this letter.

• 한국재료학회지
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• 제28권4호
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• pp.254-259
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• 2018

General D-glass(Dielectric glass) fibers are adaptable to PCBs(Printed circuit boards) because they have a low dielectric constant of about 3.5~4.5. However, very few papers have appeared on the physical characteristics of D-glass fibers. D-glass fibers were fabricated via continuous spinning process using bulk D-glass. In order to fabricate the D-glass, raw materials were put into a Pt crucible, melted at $1650^{\circ}C$ for 2 hrs, and then annealed at $521{\pm}10^{\circ}C$ for 2 hrs. We obtained transparent clear glass. The transmittance and adaptable temperature for spinning of the bulk marble glass were characterized using a UV-visible spectrometer and a viscometer. Continuous spinning was carried out using direct melting spinning equipment as a function of the fiberizing temperature in the range of $1368^{\circ}C$ to $1460^{\circ}C$, while the winder speed was between 100 rpm and 200 rpm. We investigated the physical properties of the D-glass fibers. The average diameters of the glass fibers were measured by optical microscope and FE-SEM. The average diameters of the D-glass fibers were 21.36 um at 100 rpm and 34.06 um at 200 rpm. The mechanical properties of the fibers were confirmed using a UTM(Universal materials testing machine). The average tensile strengths of the D-glass fibers were 467.03 MPa at 100 rpm and 522.60 MPa at 200 rpm.

• 한국재료학회지
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• 제27권1호
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• pp.39-42
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• 2017

E-glass (electrical glass) fiber is the widely used as a reinforced composite material of PCBs (printed circuit boards). However, E-glass fiber is not stable because it has a dielectric constant of 6~7. On the other hand, D-glass (dielectric glass) fiber has a low dielectric constant of 3~4.5. Thus, it is adaptable for use as a reinforcing material of PCBs. In this study, we fabricated D-glass compositions with low dielectric constant, and measured the electrical and optical properties. In the glass composition, the boron content was changed from 9 to 31 wt%. To confirm the dependence of the dielectric constant on melting properties, D-glass with 22 wt% boron was melted at $1550^{\circ}C$ and $1650^{\circ}C$ for 2hrs. The glass melted at $1650^{\circ}C$ had a lower dielectric constant than the glass melted at $1550^{\circ}C$. Therefore, the D-glass with boron of 9~31 wt% was fabricated by melting at $1650^{\circ}C$ for 2hrs, and transparent clear glass was obtained. We identified the non-crystalline nature of the glass using an XRD (x-ray diffractometer) graph. The visible light transmittance values depending on the boron contents were measured and found to be 88.6 % ~ 82.5 %. Finally, the dielectric constant of the D-glass with 31 wt% boron was found to have decreased from 4.18 to 3.93.