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http://dx.doi.org/10.4191/KCERS.2006.43.9.532

Properties of TCO Fabricated with Annealing Temperature of Al Doped ZnO Film for Solar Cell Application  

Kim, Bong-Seok (Department of Information and Communication, Sungkyunkwan University)
Kim, Eung-Kwon (Department of Information and Communication, Sungkyunkwan University)
Kim, Young-Sung (Advanced Material Process of Information Technology, Sungkyunkwan University)
Publication Information
Journal of the Korean Ceramic Society / v.43, no.9, 2006 , pp. 532-536 More about this Journal
Abstract
The annealing temperature effect of transparent conducting oxide film grown on glass substrate for solar cell application was studied in this paper. Using pulsed DC magnetron sputtering with 1 at% Al-doped ZnO target, TCO films were deposited on coming 7059 glass at room temperature. Al:ZnO thin films were annealed at 200, 400, Al $600^{\circ}C$ for 10 min and annealing resulted in lower biaxial compressive stress of about 1GPa and increased average crystallite size in all films. The as-grown film shows the resistivity of $1{\times}10^{-2}{\Omega}{\cdot}cm$ and transmittance under 80%, whereas the electrical and optical properties of film annealed at $400^{\circ}C$ are enhanced up to $5{\times}10^{-4}{\Omega}{\cdot}cm$ and 85%, respectively.
Keywords
Al doped ZnO; Annealing temperature; Solar cell; TCO;
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