• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.572-572
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• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.

• Applied Microscopy
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• 제32권1호
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• pp.39-44
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• 2002

한국어류의 수정란 난막 미세구조를 분류체계에 따른 체계화 작업의 일환으로 난문의 유무, 난막의 표면 및 단면구조를 밝힘으로써 계통분류학적 기초자료를 제시하고자 경골어류, 구굴무치과에 속하는 얼룩동사리의 수정란을 실험재료로 하여 주사전자현미경과 투과전자현미경을 이용하여 관찰하였다. 수정란은 부착성 및 침성란으로 장타원형이었으며 동물극쪽에 부착사가 부착되어 있었다. 난황낭 내에는 많은 유적들이 있었으며, 난막 표면은 pore cannal들이 분포하고, 난문은 관찰되지 않았다. 난막은 두 층으로 구성되어 있었는데 외층은 전자밀도가 높은 비부착성이었으며, 내층은 전자밀도가 서로 다른 7층으로 구성되어 있었다. 이상과 같이 얼룩동사리 수정란 난막의 미세구조적 특징은 얼룩동사리의 수정란이 가지는 독특한 형태학적 형질로서 종을 분류하는데 사용될 수 있을 것으로 사료된다.

• Journal of Information Display
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• 제11권2호
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• pp.49-51
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• 2010

Nanoimprint lithography (NIL) using ultraviolet (UV) rays is a technique in which unconventional lithographic patterns are formed on a substrate by curing a suitable liquid resist in contact with a transparent patterned mold, then releasing the freshly patterned material. Here, various solutions are introduced to achieve sufficient overlay accuracy and to overcome the technical challenges in resist patterning via UV imprinting. Moreover, resist patterning of all the layers in TFT and of the BM layer in CF was carried out using UV imprinting lithography to come up with a 12.1-inch TFT-LCD panel with a resolution of $1280{\times}800$ lines (125 ppi).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.17-17
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• 2010

The amorphous $Bi_5Nb_3O_{15}$ film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-$O_2$ film) has a hydrophobic surface with a surface energy of $35.6\;mJm^{-2}$, which is close to that of the orthorhombic pentacene ($38\;mJm^{-2}$, resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of $145\;nFcm^{-2}$ during and after 10s bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the polyethersulphone substrate at room temperature using a BNRT-$O_2$ film as a gate insulator exhibited a promising device performance with a high field effect mobility of $0.5\;cm^2V^{-1}s^{-1}$, an on/off current modulation of $10^5$ and a small subthreshold slope of $0.2\;Vdecade^{-1}$ under a low operating voltage of -5 V. This device also maintained a high carrier mobility of $0.45\;cm^2V^{-1}s^{-1}$ during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-$O_2$ film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.380-381
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• 2007

This paper reports on the deposition conditions and properties of ITO films used as electrode layer in a organic light emitting diodes on a PET substrate. The deposition technique employed was specially designed roll-to-roll sputtering. The oxide was deposited at room temperature in an argon and oxygen plasma on a transparent conducting ITO layer on a PET film. The influence of deposition parameters such as DC power, working pressure and oxygen partial pressure has been investigated, in order to obtain the best compromise between a high deposition rate and adequate electro-optical properties. Electrical and optical properties of ITO films were analyzed by Hall measurement examinations with van der pauw geometry at room temperature and UV/Vis spectrometer analysis, respectively. In addition, the structural properties and surface smoothness were measured by x-ray diffraction and scaning electron microscopy, respectively. From optimized ITO films grown by roll-to-roll sputter system, good electrical$(6.44{\times}10^{-4}\;{\Omega}-cm)$ and optical(above 86 % at 550 nm) properties were obtained. Also, the ITO films exhibited amorphous structure and very flat surface beacause of low deposition temperature.

• 한국재료학회지
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• 제25권3호
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• 한국입자에어로졸학회지
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• 제19권2호
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• pp.21-30
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• 2023

Solar cells, converting abundant solar energy into electrical energy, are considered crucial for sustainable energy generation. Recent advancements focus on nanoparticle-enhanced solar cells to overcome limitations and improve efficiency. These cells offer two potential efficiency enhancements. Firstly, plasmonic effects through nanoparticles can improve optical performance by enhancing absorption. Secondly, nanoparticles can improve charge transport and reduce recombination losses, enhancing electrical performance. However, factors like nanoparticle size, placement, and solar cell structure influence the overall performance. This study evaluates the performance of silver nanoparticles incorporated in a p-i-n structure of perovskite solar cells, generated via aerosol state by the evaporation and condensation system. The silver nanoparticles deposited between the hole transport layer and transparent electrode form nanoparticle embedded transport layer (NETL). The evaluation of the optoelectronic properties of perovskite devices using NETL demonstrates their potential for improving efficiency. The findings highlight the possibility of nanoparticle incorporation in perovskite solar cells, providing insights for sustainable energy generation.

• 분석과학
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• 제19권5호
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• pp.389-393
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• 2006

ZnS(Ag) 섬광체와 광전자증배관(PMT)으로 구성된 검출기는 원자력시설에서 알파선 측정용 장치로 많이 사용되고 있다. 이들 검출기는 대부분이 분말 상태의 ZnS(Ag) 섬광체를 투명한 플라스틱 소재 위에 얇게 발라서 제조한다. 본 연구에서는 간단한 방법을 이용하여 ZnS(Ag) 섬광 검출소재를 제조하기 위한 조건을 확립하였다. 검출소재는 지지체 고분자 필름과 ZnS(Ag) 섬광층로 구성된 이중구조로 제조하였으며, 지지체 필름은 고분자 소재를 녹인 후 casting 방법으로 제조하였고, ZnS(Ag) 섬광층은 접착제에 ZnS(Ag) 분말을 첨가하여 screen printing 기법으로 제조하였다. 이와 같은 제조공정을 이용하여 다양한 소재에 대한 평가 결과, 지지체 필름의 고분자 소재로서는 PSf이 가장 우수하였고, 접착제로서는 cyano resin이 가장 적합하다는 것을 확인하였다. 또한, 제조한 섬광 검출소재는 충분한 기계적 강도와 섬광체로서의 우수한 투명도를 가진다는 것을 확인하였으며, 알파선 검출 성능도 확인하였다.

• 한국해양학회지
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• 제23권1호
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• pp.24-40
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• 1988

해양연구소는 1983년에 한국 망간 노듈개발지역으로 선정된 태평양 북동 척도대의 크라리온-크리퍼톤 균열대사이에서 망간 노듈시료, 코아퇴적물시료를 비롯하여 3.5kHz음파탐사, 에어-건 음파탐사 그리고 지자기탐사등을 설시하였다. 에어-건 음파탐사기록에 의하면, 이 지역에서의 퇴적층은 이 지역내의 DSDP 163 지역 시추결과와 대비될 수 있는 2 내지 3의 층단위로 나뉠수 있다. 최상부 층단위 (Unit I)는 음파특성상 투명하며 후 올리고세에서 중기 에오세까지의 지올라이트 크레이와 방산충 연니로 이루어져 있다. 층단위 IIA는 음파총리가 확연하지만 하부로 갈수록 투명해지고 퇴적물은 팔레오세부터 초기 에오세까지의 방산충 연니로 이루어져 있으며 처어트층과 지올라이트 크레이가 협재되어 있다. 층단위 IIB는 음파 기저면 (해양 현무암) 위에서 음파총리가 뚜렷하고 고화된 백악기의 프린트-처어트질 Nannofossil백악으로 이루어 져있다. 층 단위 I과 IIB는 Line Islands 층군을 이루고 층군 IIB는 명명되어 있지 않다. 전체의 퇴적층과 층단위 I은 Line Islands Ridge 근처를 제외하고는 북쪽으로 갈수록 점차 얇아지는데, 이는 신생대 동안 척도대 CCD의 변화와 태평양판이 북쪽으로 이동하였기 때문이다. 판이 퇴적율이 높은 적도대를 가로질러 이동하는 동안 판이 침강함에 따른 CCD의 변화는 DSDP 시추공 163 퇴적물의 성분이 퇴적시대에 따라 변하도록 하는 요인이 되었다. 후백 악기의 퇴적층(층단위 IIB)는 적도 남쪽 CCD상부 깊이에서 형성 되었고, 층단위 IIA는 팔레오신동안 태평양 판이 CCD 깊이보다 더 깊은 심도로 급격히 침강한 결과이며 단지 서경 149도 서쪽에서만 나타난다. 층단위 IIA와 I은 판이 에오신초기부터 각각 척도지역을 통과하는 동안 또는 통과후에 형성되었다. 한국 망간노듈 개발지의 남쪽에서는 층단위 I이 크리퍼톤 균열대에 의해 동쪽으로 흐르도록 조절되는 남극 저층수의 한 지류에 의해 재분포되어 있는데 이 저총수의 활동은 지질시대의 상당 기간(최소한 에오세중기부터) 동안 작용하였다. 또한 Hawaiian Ridge에서 크라리온 균열대에 이르는 약 350Km에 달하는 거리에 터어바다이트층이 나타나는데, 이 층은 Hawaiian Ridge에서 직접 발생한 저탁류에 의한 것이다.