• 한국전기전자재료학회논문지
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• 제27권4호
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• pp.203-208
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• 2014

In this study, Sputtering method was used to grow Al-dopes ZnO films on a CIGS absorber layer, in order to examine the effect of TCO on properties of CIGS solar cell devices. Structural, electrical and optical properties were investigated by varied thickness of Al-dopes ZnO films. Also, relation to the application as a window layer in CIGS thin film solar cell were studied. It was found that the electrical and structural properties of ZnO:Al film improved with increasing its thickness. However, the optical properties degraded. Jsc of the fabricated CIGS based solar cells was significantly influenced by the variation of the ZnO:Al window layer thickness. Because ZnO:Al window layer is one of the Rs factors in CIGS solar cell. Rs has the biggest influence on efficiency characteristic. In order to obtain high efficiency of CIGS solar cell, ZnO:Al window layer should be fabricated with electrically and optically optimized.

• 접착 및 계면
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• 제3권3호
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• pp.22-29
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• 2002

하층에 유 무기 전도성 물질을 코팅하고 상층은 다관능성 아크릴레이트를 코팅한 다층코팅의 자외선 경화형 시스템을 도입하였다. 이러한 다층코팅은 투명한 PMMA, PC, PET 등의 기재 위에 wet and wet 방식의 코팅 방법을 사용하여 제조하였다. 도막의 표면저항과 물성은 상층 두께의 변화와 상대 습도를 다르게 하여 측정하였다. 상층두께가 $10{\mu}m$ 이하일 때 $10^8{\sim}10^{10}{\Omega}/cm^2$의 표면저항을 나타냈으며 표면 물성은 단층코팅에 비해서 다층코팅이 더 우수하게 나타났다. 그리고 다층코팅에서의 도판트 이동효과는 접촉각과 FT-IR/ATR을 통해 관찰하였다. 하층이 무기 전도성 물질인 경우에는 관찰되지 않는 도판트(DBSA)의 필름-기재 계면에서 필름-공기 계면 쪽으로 이행되는 거동이 유기전도성 물질인 경우에는 관찰되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.77-78
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• 2008

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

• 센서학회지
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• 제24권4호
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• pp.219-223
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• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국재료학회지
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• 제19권8호
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• pp.417-420
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• 2009

This study develops a highly transparent ohmic contact using phosphorus doped ZnO with current spreading for p-GaN to increase the optical output power of nitride-based light-emitting diodes (LEDs). The phosphorus doped ZnO transparent ohmic contact layer was prepared by radio frequency magnetron sputtering with post-deposition annealing. The transmittance of the phosphorus doped ZnO exceeds 90% in the region of 440 nm to 500 nm. The specific contact resistance of the phosphorus doped ZnO on p-GaN was determined to be $7.82{\times}10^{-3}{\Omega}{\cdot}cm^2$ after annealing at $700^{\circ}C$. GaN LED chips with dimensions of $300\times300{\mu}m$ fabricated with the phosphorus doped ZnO transparent ohmic contact were developed and produced a 2.7 V increase in forward voltage under a nominal forward current of 20 mA compared to GaN LED with Ni/Au Ohmic contact. However, the output power increased by 25% at the injection current of 20 mA compared to GaN LED with the Ni/Au contact scheme.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.183.1-183.1
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• 2016

Due to the latest research trend toward wearable energy devices, transparent and stretchable supercapacitors which can sustain their performance even under physical deformation have steadily attracted huge attention. Despite the Ag NW is the most promising candidate for fabrication of transparent and stretchable electronics, the electrochemical instability interrupts its application to development of the energy device. Here, we introduce a transparent and highly stretchable supercapacitor made by Au-Ag core shell NW network percolation electrode. The Au-Ag core shell NW synthesized by a simple solution process not only shows excellent electrical conductivity but also greatly enhanced chemical and electrochemical stability compare to pristine Ag NW. These outstanding properties of the Au-Ag core shell NW are attributed both to the core Ag NW and the Au protecting sheath layer. The proposed Au-Ag core shell NW based supercapacitor exhibits optical transmittance with outstanding mechanical stability withstanding 60% strain without any decrease of the performance. The supercapacitors connected in series are charged and discharged stable in 30% strain turning on a red LED. These notable results demonstrate the potential of the Au-Ag core shell NW as a strong candidate for development of wearable energy devices.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.228-235
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• 2004

In this thesis, it is designed efficient electrode formation on the organic luminescent device. ITO electrode is treated with $O_2$plasma. In order to inject hole efficiently, there is proposed the shape of anode that inserted plasma polymerized films as buffer layer between anode and organic layer using thiophene monomer. It is realized efficiently electron injection to aluminum due to introduce the quantum well in cathode. In the case of device inserted the buffer layer by using the plasma poiymerization after $O_2$plasma processing for ITO transparent electrode, since it forms the stable interface and reduce the moving speed of hole, the recombination of hole and electronic ate made in the omitting layer. Compared with the devices without buffer layer, the turn-on voltage was lowered by 1.0(V) doc to the introduction of buffer layer Since the quantum well structure is formed in front of cathode to optimize the tunneling effect, there is improved the power efficiency more than two times.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 추계학술대회 논문집
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• pp.829-830
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• 2012

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.125-125
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• 2006

We present a low temperature thermal process for the transparent dielectric layer, barrier rib, and white back dielectric layer on the soda-lime glass substrate of the PDP by the $TruNano^{TM}$ processor in combination with a compositional modification to the conventional dielectric pastes. By this method the firing temperature can be lowered by more than $100^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.