• 센서학회지
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• 제28권2호
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• pp.133-138
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• 2019

The a-InGaZnO (a-IGZO) thin film transistor (TFT) has the advantages of larger mobility than that of amorphous silicon TFTs, acceptable reliability and uniformity over a large area, and low process cost. A capacitive-type touch sensor was studied with an a-IGZO TFT that can be used on the front side of a display due to its transparency. A capacitive sensor detects changes of capacitance between the surface of the finger and the sensor electrode. The capacitance varies according to the distance between the sensor plate and the touching or non-touching of the sensing electrode. A capacitive touch sensor using only one a-IGZO TFT was developed with the reduction of two bus lines, which made it easy to reduce the pixel pitch. The proposed sensor circuit maintained the amplification performance, which was investigated for various drive conditions.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.394.2-394.2
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• 2014

We fabricated highly transparent and flexible Ti doped In2O3 (TIO)/Ag nanowire(NW)/TIO (TAT) multilayer electrodes by linear facing target sputtering (LFTS) and brush-painting for used as flexible for anode organic solar cells(FOSCs). The characteristics of TAT transparent anode as a function of number of brush-painting cycles was also investigated. At optimized conditions we achieved highly flexible TAT multilayer electrodes with a low sheet resistance of $9.01{\Omega}/square$ and a high diffusive transmittance more than 80% in visible region as well as superior mechanical stability. The effective embedment of the Ag NW network between top and bottom TIO films led to a metallic conductivity, high transparency. Based on FE-SEM HRTEM, and XRD analysis, we can find that the Ag NW network was effectively embedded between top and bottom TIO layers due to good flexibility of Ag NW, the TAT multilayer showed superior flexibility than single TIO layer. Successful operation of FOSCs with high power conversion efficiency of 3.01% indicates that TAT hybrid electrode is a promising alternative to conventional ITO electrode for high performance FOSCs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.127-127
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• 2011

We investigate the transparent TFTs using a transparent ZnSnO3 (ZTO)/Ag/ZTO multilayer electrode as S/D electrodes with low resistivity of $3.24{\times}10^{-5}$ ohm-cm, and high transparency of 86.29% in ZTO based TFTs. The Transparent TFTs (TTFTs) are prepared on glass substrate coated 100 nm of ITO thin film. On atomic layer deposited $Al_2\;O_3$, 50 nm ZTO layer is deposited by RF magnetron sputtering through a shadow mask for channel layer using ZTO target with 1 : 1 molar ratio of ZnO : $SnO_2$. The power of 100W, the working pressure of 2mTorr, and the gas flow of Ar 20 sccm during the ZTO deposition. After channel layer deposition, a ZTO (35 nm)/Ag (12 nm)/ZTO(35 nm) multilayer is deposited by DC/RF magnetron sputtering to form transparent S/D electrodes which are patterned through the shadow mask. Devices are annealed in air at 300$^{\circ}C$ for 30 min following ZTO deposition. Using UV/Visible spectrometer, the optical transmittances of the TTFT using ZTO/Ag/ ZTO multilayer electrodes are compared with TFT using Mo electrode. The structural properties of ZTO based TTFT with ZTO/Ag/ZTO multilayer electrodes are analyzed by high resolution transmission electron microscopy (HREM) and X-ray photoelectron spectroscopy (XPS). The transfer and output characterization of ZTO TTFTs are examined by a customized probe station with HP4145B system in are.

• 청정기술
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• 제22권4호
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• pp.232-240
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• 2016

최근 디스플레이 대형화 및 유연화로 인한 기존 ITO (indium tin oxide) 기반 TSP (touch screen panel)의 구현에 한계로 인한 대체 소재에 대한 다양한 연구가 진행 중이다. 기존 기술의 대체 소재로 메탈메쉬(Metal mesh) 방식에 대한 연구가 진행되고 상용화 수준까지 진행되었다. 그러나 시인성 및 모아레(Moire) 현상으로 인하여 $5{\mu}m$ 이하의 미세 전극 패턴이 필요하나 공정 중 패턴이 탈락하는 등의 문제로 낮은 수율의 문제가 있다. 기존의 레이저 CVD 리페어 공정에서 $10{\mu}m$ 이하의 패턴 형성의 한계, 위성액적 등의 문제로 인해 안정적인 미세전극 패턴 형성에는 어려움이 있었다. 본 연구에서는 $5{\mu}m$ 이하의 안정적인 패턴 형성을 위해서 다양한 점도에서 미세액적 토출이 가능한 전기수력학 프린팅 기술을 적용하였다. $5{\mu}m$ 이하의 안정적인 미세 전극 패턴 형성을 위해 주요 변수의 변화에 따른 최적 공정 조건을 도출하였고 최적 공정 조건을 입력하여 리페어 공정 적용 가능성을 확인하였다.

• 전기학회논문지
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• 제59권1호
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• pp.108-112
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• 2010

Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about $1.8'10^{-4}Wcm$ which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.234-234
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• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.

• Journal of Information Display
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• 제11권3호
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• pp.119-122
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• 2010

This paper proposes a transflective liquid crystal display (LCD) in a whole-pixel switchable configuration with a high aperture ratio using an electrophoretic particle layer (EPL). The switchable transflective LCD consisted of the liquid crystal layer as a display unit, and the EPL as a switchable mirror. The switching of the EPL between the mirror for the reflective mode and the transparency for the transmissive mode was performed by controlling electrophoretic nanoparticles with an applied voltage in a three-electrode structure. The single pixel was used as the whole transmissive or reflective mode that corresponded to the switchable EPL mirror. Thus, a transflective LCD with a high aperture ratio was obtained.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.203-203
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• 2012

The SWCNTs network are formed on various plastic substrates such as poly(ethylene terephthalate) (PET), polyimide (PI) and soda lime glass using roll-to-roll printing and spray process. Selective patterning of carbon nanotubes film on transparent substrates was performed using a femtosecond laser. This process has many advantages because it is performed without chemicals and is easily applied to large-area patterning. It could also control the transparency and conductivity of CNT film by selective removal of CNTs. Furthermore, selective cutting of carbon nanotube using a femtosecond laser does not cause any phase change in the CNTs, as usually shown in focused ion beam irradiation of the CNTs. The patterned SWCNT films on transparent substrate can be used electrode layer for touch panels of flexible or flat panel display instead indium tin oxide (ITO) film.

• 한국분말재료학회지
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• 제24권2호
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• pp.153-163
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• 2017

Transparent conducting electrodes (TCEs) are attracting considerable attention as an important component for emerging optoelectronic applications such as liquid crystal displays, touch panels, and solar cells owing to their attractive combination of low resistivity (<$10^{-3}{\Omega}cm$) and high transparency (>80%) in the visible region. The solution-based process has unique properties of an easy fabrication procedure, scalability, and low cost compared to the conventional vacuum-based process and may prove to be a useful process for fabricating TCEs for future optoelectronic applications demanding large scale and flexibility. In this paper, we focus on the introduction of a solution-based process for TCEs. In addition, we consider the powder materials used to fabricate solution-based TCEs and strategies to improve their transparent conducting properties.

• 센서학회지
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• 제21권5호
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• pp.385-388
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• 2012

This paper describes the synthesis and characterization of graphene by RTA process. Amorphous 3C-SiC were deposited using APCVD for carbon source and Ni layer were employed for transition layer. Various parameters of the ramping speed, the annealing time and the cooling speed are evaluated for the optimized combination allowed for the reproducible fabrication of graphene using 3C-SiC thin film. For analysis of crystalline Raman spectra was employed. Transferred graphene shows a high IG/ID ratio of 2.73. SEM and TEM images show the optical transparency and 6 carbon network, respectively. Au electrode deposited on the transferred graphene shows linear I-V curve and its resistance is 358 ${\Omega}$.