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http://dx.doi.org/10.5370/KIEE.2010.59.1.108

Process Optimization Approached by Design of Experiment Method for Ga-doped ZnO Thin Films  

Lee, Deuk-Hee (한국과학기술연구원 에너지재료연구단, 고려대학교 전기전자컴퓨터공학과)
Kim, Sang-Sig (고려대학교 전기전자전파공학부)
Lee, Sang-Yeol (한국과학기술연구원 에너지재료연구단)
Publication Information
The Transactions of The Korean Institute of Electrical Engineers / v.59, no.1, 2010 , pp. 108-112 More about this Journal
Abstract
Design of experiment (DOE) method is employed for a systematic and highly efficient optimization of Ga-doped ZnO thin films synthesized by pulsed laser deposition (PLD) process. We sequentially adopted fractional-factorial design (FD) and central composite design (CCD) of the DOE methods. In fractional-FD stage, significant factors to make conductive electrode are found to target-substrate (T-S) distance and oxygen partial pressure. Moreover, correlation among the process factors is elucidated using surface profile modeling. Electrical properties of the GZO films grown on a glass substrate had been optimized to find that the lowest electrical resistivity of about $1.8 which was acquired with the T-S distance and the oxygen pressure of 4 cm and 7 mTorr, respectively. During the DOE-fueled optimization process, the transparency of the GZO films is ensured higher than 85 %.
Keywords
DOE; Ga-doped; ZnO; PLD; TCO;
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