• The Journal of Korean Institute of Communications and Information Sciences
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• v.37B no.9
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• pp.795-805
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• 2012

This paper proposes an algorithm and a hardware architecture for a broadcast communication which has the worst bottleneck among multiprocessor using distributed memory architectures. In conventional system, The pipelined broadcast algorithm is an algorithm which takes advantage of maximum bandwidth of communication bus. But unnecessary synchronization process are repeated, because the pipelined broadcast sends the data divided into many parts. In this paper, the MPI unit for pipeline chain algorithm based on circuit switching removing the redundancy of synchronization process was designed, the proposed architecture was evaluated by modeling it with systemC. Consequently, the performance of the proposed architecture was highly improved for broadcast communication up to 3.3 times that of systems using conventional pipelined broadcast algorithm, it can almost take advantage of the maximum bandwidth of transmission bus. Then, it was implemented with VerilogHDL, synthesized with TSMC 0.18um library and implemented into a chip. The area of synthesis results occupied 4,700 gates(2 input NAND gate) and utilization of total area is 2.4%. The proposed architecture achieves improvement in total performance of MPSoC occupying relatively small area.

• Journal of Advanced Navigation Technology
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• v.14 no.2
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• pp.220-226
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• 2010

In this paper, an low power symbol detector is proposed for MIMO communication system with two transmit and two receive antennas. The proposed symbol detector can support both the spatial multiplexing (SM) mode and spatial diversity (SD) mode for MIMO transmission technique, and shows the optimal maximum likelihood (ML) performance. Also, by sharing the hardware block and using the dedicated clock MIMO modes, the power of the proposed architecture is dramatically decreased. The proposed symbol detector was designed in hardware description language (HDL) and synthesized to logic gates using a $0.13-{\mu}m$ CMOS standard cell library. The power consumption was estimated by using Synopsys Power CompilerTM, which is reduced by maximum 85%, compared with the conventional architecture.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.9A
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• pp.1332-1339
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• 2000

This paper presents the architecture and design of a high speed asymmetric data transmission baseband MODEM ASIC chip for CATV networks. The implemented MODEM chip supports the physical layer of the DOCSIS(Data Over Cable Service Interface Specification) standard in MCNS(Multimedia Cable Network System) The chip consists of a QPSK/16-QAM transmitter and a 64/256-QAM receiver which contain a symbol timing recovery circuit, a carrier recovery circuit, a blind equalizer using MMA and LMS algorithms. The chip can support data rates of 64Mbps at 256 QAM and 48Mbps at 64-QAM and can provide symbol rates up to 8MBaud. This symbol rate is faster than existing QAM receivers. We have performed logic synthesis using the $0.35\mu\textrm{m}$ standard cell library. The total number of gates is about 290,000 and the implemented chip is being fabricated and will be delivered soon.

• Korean Journal of Metals and Materials
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• v.46 no.3
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• pp.159-168
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• 2008

Thermally-evaporated 10 nm-Ni/1 nm-Ru/(30 nm or 70 nm-poly)Si structures were fabricated in order to investigate the thermal stability of Ru-inserted nickel monosilicide. The silicide samples underwent rapid thermal anne aling at $300{\sim}1,100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process were formed on the top of the single crystal and polycrystalline silicon substrates mimicking actives and gates. The sheet resistance was measured using a four-point probe. High resolution X-ray diffraction and Auger depth profiling were used for phase and chemical composition analysis, respectively. Transmission electron microscope and scanning probe microscope(SPM) were used to determine the cross-sectional structure and surface roughness. The silicide, which formed on single crystal silicon and 30 nm polysilicon substrate, could defer the transformation of $Ni_2Si $i and $NiSi_2 $, and was stable at temperatures up to $1,100^{\circ}C$ and $1,100^{\circ}C$, respectively. Regarding microstructure, the nano-size NiSi preferred phase was observed on single crystalline Si substrate, and agglomerate phase was shown on 30 nm-thick polycrystalline Si substrate, respectively. The silicide, formed on 70 nm polysilicon substrate, showed high resistance at temperatures >$700^{\circ}C$ caused by mixed microstructure. Through SPM analysis, we confirmed that the surface roughness increased abruptly on single crystal Si substrate while not changed on polycrystalline substrate. The Ru-inserted nickel monosilicide could maintain a low resistance in wide temperature range and is considered suitable for the nano-thick silicide process.

• Journal of architectural history
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• v.31 no.4
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• pp.17-28
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• 2022

This study aims to investigate and reveal the spatial structure of Boryeonghyeon by examining the geographical status of its Eupchi (Local administrative center:邑治) through an analysis of the location, tracing locations of governemnt offices including Dongheon(東軒) and Kaeksa(客舍) in the walled town, and checking the lot numbers of Sajikdan(社稷壇), Yeodan(厲壇), and Cheongyeonyeok(靑淵驛) outside it. Buildings of Boryeonghyeon in the walled town in the Joseon Dynasty were almost lost and now, part of the city wall and Haesanru(海山樓) just remains as relic. The walled town consisted of several buildings of government offices as well as Dongheon and Kaeksa which are government organs. Altar and shrine(壇廟) facilities including Shrine of Confucius(文廟), Altar of Land and Grain, and Preceptor's Shrine were placed outside the walled town and Cheongyeonyeok were operated as the facilities for transmission of royal orders. Therefore, the government office facilities in the walled town, altar and shrine facilities outside the fortress, and the location of the post station were required to trace and check each of them. For the checking method, the lot numbers could be checked by checking the original cadastral maps and the then land categories and owners, analyzing the records and circumstances of the relevant township annals(邑誌), and examining analyses on the locations by using a numerical map of one to 5 thousands. The study estimated the locations of government facilities including Dongheon and Kaesa placed in the walled town and was grasped to be the east and west gates with the south gate which remains now in the fortress. And the lot numbers of Sajikdan, Yeodan, Cheongyeonyeok.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.11
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• pp.33-40
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• 2005

This paper describes a design of FFT/IFFT Core(FFT256/2k), which is an essential block in terrestrial DMB modem. It has four operation modes including 256/512/1024/2048-point FFT/IFFT in order to support the Eureka-147 transmission modes. The hybrid architecture, which is composed of R2SDF and R2SDC structure, reduces memory by $62\%$ compared to R2SDC structure, and the SQNR performance is improved by TS_CBFP(Two Step Convergent Block Floating Point). Timing simulation results show that it can operate up to 50MHz(a)2.5-V, resulting that a 2048-point FFT/IFFT can be computed in 41-us. The FFT256/2k core designed in Verilog-HDL has about 68,400 gates and 58,130 RAM. The average power consumption estimated using switching activity is about 113-mW, and the total average SQNR of over 50-dB is achieved. The functionality of the core was fully verified by FPGA implementation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.2
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• pp.195-200
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• 2007

We fabricated thermally-evaporated 10 nm-Ni/70 w-Poly-Si/200 $nm-SiO_2/Si$ and $10nm-Ni_{0.5}Co_{0.5}/70$ nm-Poly-Si/200 $nm-SiO_2/Si$ structures to investigate the microstructure of nickel monosilicide at the elevated temperatures required fur annealing. Silicides underwent rapid anneal at the temperatures of $600{\sim}1100^{\circ}C$ for 40 seconds. Silicides suitable for the salicide process formed on top of the polycrystalline silicon substrate mimicking the gates. A four-point tester was used to investigate the sheet resistances. A transmission electron microscope and an Auger depth profile scope were employed for the determination of cross sectional microstructure and thickness. 20nm thick nickel cobalt composite silicides on polycrystalline silicon showed low resistance up to $900^{\circ}C$, while the conventional nickle silicide showed low resistance below $900^{\circ}C$. Through TEM analysis, we confirmed that the 70nm-thick nickel cobalt composite silicide showed a unique silicon-silicide mixing at the high silicidation temperature of $1000^{\circ}C$. We identified $Ni_3Si_2,\;CoSi_2$ phase at $700^{\circ}C$ using an X-ray diffractometer. Auger depth profile analysis also supports the presence of this mixed microstructure. Our result implies that our newly proposed NiCo composite silicide from NiCo alloy films process may widen the thermal process window for the salicide process and be suitable for nano-thick silicides.