• Journal of the Korean Chemical Society
• /
• v.24 no.2
• /
• pp.91-100
• /
• 1980

A formula for calculation of the magnetic moments for octahedral $[Ti(III)A_3B_3]$ type complexes with axial symmetry has been developed and the magnetic moments for these complexes are calculated, using the experimental values of the distortion parameters$({\delta})$, spin-orbit coupling constants and orbital reduction factors. The calculated magnetic moments for axially distorted octahedral $[Ti(III)A_3B_3]$ type complexes are in resonable agreement with the experimental valuest It is found that the calculated magnetic moments decrease as the extent of axial distortion increases and the orbital reduction factor decreases. A calculation method of the magnetic moments for octahedral $[Ti(III)A_3B_3]$ type complexes which are in a ligand field of lower than axial symmetry has also been developed and the structure of distorted octahedral $[Ti(III)A_3B_3]$ type complexes are discussed on the basis of the of the calculated magnetic moments.

• Journal of the Korean Chemical Society
• /
• v.29 no.3
• /
• pp.257-264
• /
• 1985

Dioxobis(3-methoxysalicyaldehydato)molybdeum(VI) complex has been synthesized by reactions of 3-methoxysalicylaldehyde and ammonium paramolybdate in methanol solution. With appropriate primary amine, the resulting complex gave schiff-base complexes, MoO$_2$(CH$_3$O-sal-N-R)$_2$ in which C=O oxide ligands had been replaced by nitrogen. The properties and possible molecular structure of these complexes were discussed by elemental analysis, spectroscopic studies and electric conductivities measurements. It was found that the Mo(VI) complexes contain a cis-MoO$_2$ group since their infrared spectra two Mo=O band at about 900cm$^{-1}$ and the combining ratios for MoO$_2$-ligand are 1 : 2. Also, electronic spectra of molybdenyl complexes assigned to ligand-to-metal charge transfer transition. All of these complexes are yellow or orange, depolar compound and slightly soluble in alcohol, dichloromethane, chloroform and N,N-dimethylformamide.

• Journal of Hydrogen and New Energy
• /
• v.3 no.2
• /
• pp.25-33
• /
• 1992

With the aim to obtain $TiO_2$ films with an increased photorespones and absorbance in the visible region of the solar spectrum, the direct oxidation of titanium alloys were performed. In this study, $Ti-Ga_2O_3$ alloy was prepared by mixing, pressing and arc melting of appropriate amounts of titanium and $Ga_2O_3$ powder. Electrochemical measurements were performed in three electrode cell using electrolyte of 1M NaOH solution. The oxide films on $Ti-Ga_2O_3$ alloy was composed of $Ti_2O$, TiO, $TiO_2$, $Ga_2TiO_5$. The free energy efficiency (${\eta}e$) of $Ti-Ga_2O_3$ oxide films had 0.8~1.3 % and were increased with the increase of $Ga_2O_3$ content up to 10wt %. The onset potential ($V_{on}$) had -0.8V~0.9V ranges and were shifted to anodic direction with the increase of $Ga_2O_3$ content. The spectral response of Ti-$Ga_2O_3$ oxides were similar to the response of the $TiO_2$ and their $E_g$ were observed to 2.90~3.0eV. Variations of onset potential($V_{on}$) associated with electrolyte pH were -59mV/pH. This probably reflects the nature of the bonding of $OH^-$ ion to the $TiO_2$ surface, a common phenomena in the transition-metal oxides.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.41 no.5
• /
• pp.525-532
• /
• 1992

Fluorine-doped YBaS12TCuS13TOS17-xTFS1yT superconducting materials with y varing two orders of magnitude form 0.02 to 2.0 have been prepared by a sol-gel process by using metal nitrate salts, sodium hydroxide and sodium fluoride. Fluorine contents have been measured using an ion-selective electrode. All fluorine doped as reactant were found to be present in the resulted samples. From the observation of XRD it has been concluded that the samples with y 0.2 formed simply the single phase of perovskite structure, whereas those with y 0.5 yielded together some compounds such as BaFS12T, YFS13T and CuO in the resulted samples. The observation of solid state S019TF NMR has been carried out in order to check whether fluorine was actually incorporated into the lattice sites, and the experimental results revealed that the mole ratio of fluorine incorporated into the lattice sites of YBaS12TCuS13TOS17-xT was approximately 0.2 per mole of the compound. Also electrical resistivity measurement indicated that onset transition temperature has the tendency to increase slightly with increasing y in the dilute region as y 0.2.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2001.11a
• /
• pp.67-67
• /
• 2001

The structure zone model has been used to provide an overview of the relationship between the microstructure of the films deposited by PVD and the most prominent deposition condition.s. B.AMovchan and AV.Demchishin have proposed it firstls such model. They concluded that the general features of the resulting structures could be correlated into three zones depending on $T/T_m$. Here T m is the melting point of the coating material and T is the substrate temperature in kelvines. Zone 1 ($T/Tm_) is dominated by tapered macrograins with domed tops, zone 2 ($O.3) by columnar grains with denser boundaries and zone 3 ($T/T_m>O.5$) by equiaxed grains formed by recrystallization. J.AThomton has extended this model to include the effect of the sputtering gas pressure and found a fourth zone termed zone T(transition zone) consisting of a dense array of poorly defined fibrous grains. R.Messier found that the zone I-T boundary (fourth zone of Thorton) varies in a fashion similar to the film bias potential as a function of gas pressure. However, there has not nearly enough model for explaining the change in morphology with crystal orientation of the films. The structure zone model only provide an information about the morphology of the deposited film. In general, the nucleation and growth mechanism for granular and fine structure of the deposited films are very complex in an PVD technique because the morphology and orientation depend not only on the substrate temperature but also on the energy of deposition of the atoms or ions, the kinetic mechanism between metal atoms and argon or nitrogen gas, and even on the presence of impurities. In order to clarify these relationship, AI and Mg thin films were prepared on SPCC steel substrates by PVD techniques. The influence of gas pressures and bias voltages on their crystal orientation and morphology of the prepared films were investigated by SEM and XRD, respectively. And the effect of crystal orientation and morphology of the prepared films on corrosion resistance was estimated by measuring polarization curves in 3% NaCI solution.

• Proceedings of the KIEE Conference
• /
• 2007.11a
• /
• pp.124-125
• /
• 2007

The composites were fabricated $\beta$-SiC and $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at $1,650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[MPa], 54.60 [GPa] and 2.84[GPa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. The electrical resistivity showed the lowest value of 0.012[${\Omega}{\cdot}cm$] for 16[wt%] at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.129-129
• /
• 2010

적외선 검출소자(Infrared Photodetector)는 근적외선에서 원적외선 영역에 이르는 광범위한 파장 범위의 적외선을 이용하는 기기로서 대상물이 방사하는 적외선 영역의 에너지를 흡수하여 이를 영상화할 수 있는 장비이다. 적외선 관련 기술은 2차 세계대전 기간에 태동하였으며, 현재에는 원거리 감지기술 등과 접목되면서 그 활용 분야가 다양해지고 있다. 특히 능동형 정밀 타격무기를 비롯한 감시 정찰 장비 및 지능형 전투 장비 시스템 등에 대한 요구를 바탕으로 보다 정밀하고 신속한 표적 감지 및 정보처리 기술에 관한 연구가 선진국을 통해서 활발히 진행되고 있다. 기존의 Bolometer 형식의 열 감지 소자는 반응 속도가 느리고 측정 감도가 낮은 단점이 있으며, MCT(HgCdTe)를 이용한 적외선 검출기의 경우 높은 기계적 결함과 77K 저온에서 동작해야하기 때문에 발생하는 추가 비용 등이 문제점으로 지적되고 있다[1]. 이에 반해 화합물 반도체 자기조립 양자점(self-assembled quantum dot)을 이용한 적외선 수광소자는 양자점이 가지는 불연속적인 내부 에너지 준위로 인하여, 높은 내부 양자 효율과 온도 안정성을 기대할 수 있으며, 고성능, 고속처리, 저소비전력 및 저소음의 실현이 가능하다. 본 연구에서는 적층 InAs/InGaAs dot-in-a-well 구조를 유기금속화학기상증착법을 이용하여 성장하고 이를 소자에 응용하였다. 균일한 적층 양자점의 성장을 위해서 원자현미경(atomic force microscopy)을 이용하여, 각 층의 양자점의 크기와 밀도를 관찰하였고, photoluminescence (PL)를 이용하여 발광특성을 연구하였다. 각 층간의 GaAs space layer의 두께와 온도 조절 과정을 조절함으로써 균일한 적층 양자점 구조를 얻을 수 있었다. 이를 이용하여 양자점의 전도대 내부의 에너지 준위간 천이(intersubband transition)를 이용하는 n-type GaAs/intrinsic InAs 양자점/n-type GaAs 구조의 양자점 적외선수광소자 구조를 성장하였다. 이 과정에서 상부 n-type GaAs의 성장 온도가 600도 이상이 되는 경우 발광효율이 급격히 감소하고, 암전류가 크게 증가하는 것을 관찰하였다. 이는 InAs 양자점과 주변 GaAs 간의 열에 의한 상호 확산에 의하여 양자점의 전자 구속 효과를 저해하는 것으로 설명된다.

• Korean Journal of Materials Research
• /
• v.16 no.10
• /
• pp.629-632
• /
• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Korean Journal of Optics and Photonics
• /
• v.31 no.1
• /
• pp.31-36
• /
• 2020

We propose a band-switchable terahertz metamaterial based on an etched vanadium dioxide (VO₂) thin film. A line of etched VO₂ thin film was placed in the center gap of the split square-loop shape for the tunability of the metamaterial. The resonance frequency of the metamaterial can be switched from the 1.4 THz band to the 0.7 THz band, according to the insulator-metal phase transition in the VO₂ thin film. The absolute difference in the transmittance of the metamaterial was 78.5% and 65.8% at 0.7 THz and 1.4 THz respectively, according to the band switching. The differential phase shift was around 90°, and the transmittance was stably maintained between 40% and 60% in the middle band of the two switchable resonance-frequency bands.

• Nano
• /
• v.13 no.12
• /
• pp.1850141.1-1850141.11
• /
• 2018

Sodium ion batteries based on the more sodium source reserve than that of lithium have been designed as promising alternatives to lithium ion batteries. However, several problems including unsatisfied specific capacity and serious cyclic stability must be solved before the reality. One of the effective approaches to solve the abovementioned problems is to search for suitable anode materials. In this work, we designed and prepared $FeSe_2$ nanoflakes via a simple hydrothermal method which can be adjusted in composition by Fe precursor. As a potential anode for sodium storage, the optimized $FeSe_2$ electrode was further evaluated in different electrolytes of $NaClO_4$ in propylene carbonate/fluoroethylene carbonate and $NaCF_3SO_3$ in diethylene glycol dimethyl ether. The capacity was about $470mAh\;g^{-1}$ and $535mAh\;g^{-1}$ at $0.5A\;g^{-1}$, respectively, in the voltage between 0.5 V and 2.9 V in the cycle of stabilization phase. Superior performance both in capacity and in stability was obtained in ether-based electrolyte, which affords the property without plugging the intermediates of transition metal dichalcogenides during charge/discharge processes.