Study of Basic Properties to Develope SiC Ceramic Heater by Self-Charge with Electricity

자기 통전식 SiC세라믹 발열체 개발을 위한 기초 특성 연구

  • Shin, Yong-Deok (Electrical Electronic and information Engineering, Wonkwnag Univ.) ;
  • Ko, Tae-Hun (Electrical Electronic and information Engineering, Wonkwnag Univ.) ;
  • Ju, Jin-Young (Balsan Industry)
  • 신용덕 (원광대학교 전기전자 및 정보공학부) ;
  • 고태헌 (원광대학교 전기전자 및 정보공학부) ;
  • 주진영 (발산공업)
  • Published : 2007.11.02

Abstract

The composites were fabricated $\beta$-SiC and $TiB_2$ powders with the liquid forming additives of 8, 12, 16[wt%] $Al_2O_3+Y_2O_3$ as a sintering aid by pressureless annealing at $1,650[^{\circ}C]$ for 4 hours. Reactions between SiC and transition metal $TiB_2$ were not observed in the microstructure and the phase analysis of the pressureless annealed SiC-$TiB_2$ electroconductive ceramic composites. The relative density, the flexural strength, the Young's modulus and the Vicker's hardness showed the highest value of 82.29[%], 189.5[MPa], 54.60 [GPa] and 2.84[GPa] for SiC-$TiB_2$ composites added with 16[wt%] $Al_2O_3+Y_2O_3$ additives at room temperature. The relative density of SiC-$TiB_2$ composites was lowered due to gaseous products of the result of reaction between SiC and $Al_2O_3+Y_2O_3$. The electrical resistivity showed the lowest value of 0.012[${\Omega}{\cdot}cm$] for 16[wt%] at 25[$^{\circ}C$]. The electrical resistivity was all negative temperature coefficient resistance (NTCR) in the temperature ranges from 25[$^{\circ}C$] to 700[$^{\circ}C$].

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