• Journal of Information Technology Services
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• v.14 no.3
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• pp.183-196
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• 2015

The concept of energy-efficient networking has begun to spread in the past few years, gaining increasing popularity. A common opinion among networking researchers is that the sole introduction of low consumption silicon technologies may not be enough to effectively curb energy requirements. Thus, for disruptively boosting the network energy efficiency, these hardware enhancements must be integrated with ad-hoc mechanisms that explicitly manage energy saving, by exploiting network-specific features. The IEEE 802.3az Energy Efficient Ethernet (EEE) standard is one of such efforts. EEE introduces a low power mode for the most common Ethernet physical layer standards and is expected to provide large energy savings. However, it has been shown that EEE may not achieve good energy efficiency because mode transition overheads can be significant, leading to almost full energy consumption even at low utilization levels. Coalescing techniques such as packet coalescing and interrupt coalescing were proposed to improve energy efficiency of EEE, but their implementations typically adopt a simple policy that employs a few fixed values for coalescing parameters, thus it is difficult to achieve optimal energy efficiency. The paper proposes adaptive interrupt coalescing (AIC) that adopts an optimal policy that could not only improve energy efficiency but support performance. AIC has been implemented at the sender side with the Intel 82579 network interface card (NIC) and e1000e Linux device driver. The experiments were performed at 100 M bps transfer rate and show that energy efficiency of AIC is improved in most cases despite performance consideration and in the best case can be improved up to 37% compared to that of conventional interrupt coalescing techniques.

• Journal of the Korean institute of surface engineering
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• v.36 no.1
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• pp.14-21
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• 2003

Thin films of ZrO$_2$ and TiO$_2$ were deposited on Si(100) substrates using RF magnetron sputtering technique. To study an influence of the sputtering parameters, systematic experiments were carried out in this work. XRD data show that the $ZrO_2$ films were mainly grown in the [111] orientation at the annealing temperature between 800 and $1000^{\circ}C$ while the crystal growth direction was changed to be [012] at above $1000^{\circ}C$. FT-IR spectra show that the oxygen stretching peaks become strong due to $SiO_2$ layer formation between film layers and silicon surface after annealing, and proved that a diffusion caused by either oxygen atoms of $ZrO_2$ layers or air into the interface during annealing. Different crystal growth directions were observed with the various deposition parameters such as annealing temperature, RF power magnitude, and added $O_2$ amounts. The growth rate of $TiO_2$ thin films was increased with RF power magnitude up to 150 watt, and was then decreased due to a sputtering effect. The maximum growth rate observed at 150 watt was 1500 nm/hr. Highly oriented, crack-free, stoichiometric polycrystalline $TiO_2$<110> thin film with Rutile phase was obtained after annealing at $1000^{\circ}C$ for 1 hour.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.129-129
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• 2010

적외선 검출소자(Infrared Photodetector)는 근적외선에서 원적외선 영역에 이르는 광범위한 파장 범위의 적외선을 이용하는 기기로서 대상물이 방사하는 적외선 영역의 에너지를 흡수하여 이를 영상화할 수 있는 장비이다. 적외선 관련 기술은 2차 세계대전 기간에 태동하였으며, 현재에는 원거리 감지기술 등과 접목되면서 그 활용 분야가 다양해지고 있다. 특히 능동형 정밀 타격무기를 비롯한 감시 정찰 장비 및 지능형 전투 장비 시스템 등에 대한 요구를 바탕으로 보다 정밀하고 신속한 표적 감지 및 정보처리 기술에 관한 연구가 선진국을 통해서 활발히 진행되고 있다. 기존의 Bolometer 형식의 열 감지 소자는 반응 속도가 느리고 측정 감도가 낮은 단점이 있으며, MCT(HgCdTe)를 이용한 적외선 검출기의 경우 높은 기계적 결함과 77K 저온에서 동작해야하기 때문에 발생하는 추가 비용 등이 문제점으로 지적되고 있다[1]. 이에 반해 화합물 반도체 자기조립 양자점(self-assembled quantum dot)을 이용한 적외선 수광소자는 양자점이 가지는 불연속적인 내부 에너지 준위로 인하여, 높은 내부 양자 효율과 온도 안정성을 기대할 수 있으며, 고성능, 고속처리, 저소비전력 및 저소음의 실현이 가능하다. 본 연구에서는 적층 InAs/InGaAs dot-in-a-well 구조를 유기금속화학기상증착법을 이용하여 성장하고 이를 소자에 응용하였다. 균일한 적층 양자점의 성장을 위해서 원자현미경(atomic force microscopy)을 이용하여, 각 층의 양자점의 크기와 밀도를 관찰하였고, photoluminescence (PL)를 이용하여 발광특성을 연구하였다. 각 층간의 GaAs space layer의 두께와 온도 조절 과정을 조절함으로써 균일한 적층 양자점 구조를 얻을 수 있었다. 이를 이용하여 양자점의 전도대 내부의 에너지 준위간 천이(intersubband transition)를 이용하는 n-type GaAs/intrinsic InAs 양자점/n-type GaAs 구조의 양자점 적외선수광소자 구조를 성장하였다. 이 과정에서 상부 n-type GaAs의 성장 온도가 600도 이상이 되는 경우 발광효율이 급격히 감소하고, 암전류가 크게 증가하는 것을 관찰하였다. 이는 InAs 양자점과 주변 GaAs 간의 열에 의한 상호 확산에 의하여 양자점의 전자 구속 효과를 저해하는 것으로 설명된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.453-453
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• 2010

In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.629-632
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• 2006

Electrical characteristics of Pt/Ti/Pt/Au and Pd/Zn/Pd/Au contacts to p-type InGaAs grown on an InP substrate have been characterized as a function of the doping concentration and the annealing temperature. The Pt/Ti/Pt/Au contacts produced the specific contact resistance as low as $2.3{\times}10^{-6}{\Omega}{\cdot}cm^2$, when heat-treated at an annealing temperature of $400^{\circ}C$. Comparison of the Pt/Ti/Pt/Au and Ti/Pt/Au contacts showed that the first Pt layer plays an important role in reducing the contact resistivity probably by lowering energy barrier at the metal-semiconductor interface. For the Pd/Zn/Pd/Au contacts, the contact resistivity remained virtually unchanged with increasing annealing temperature. The specific contact resistivity as low as $4.7{\times}10^{-6}{\Omega}{\cdot}cm^2$ was obtained. The results indicate that the Pt/Ti/Pt/Au and Pd/Zn/Pd/Au schemes could be potentially important for the fabrication of InP-based optoelectronic devices, such as photodetector and optical modulator.

• Journal of KIISE
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• v.42 no.9
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• pp.1078-1089
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• 2015

In this paper, we propose the Min-hash Assisted Delta-compression Engine(MADE) to improve the lifetime of NAND flash-based storages at the device level. MADE effectively reduces the write traffic to NAND flash through the use of a novel delta compression scheme. The delta compression performance was optimized by introducing min-hash based LSH(Locality Sensitive Hash) and efficiently combining it with our delta compression method. We also developed a delta encoding technique that has functionality equivalent to deduplication and lossless compression. The results of our experiment show that MADE reduces the amount of data written on NAND flash by up to 90%, which is better than a simple combination of deduplication and lossless compression schemes by 12% on average.

• Bulletin of the Korean Chemical Society
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• v.18 no.9
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• pp.916-922
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• 1997

A superconducting phase La2CuO4+δ (Tc=44 K) has been prepared by electrochemical oxidation which allows the oxygen to intercalat into the La2O2 layers. According to the Cu K-edge X-ray absorption near edge structure spectroscopic analysis, the oxidized phase shows an overall spectra shift of about 0.5 eV to a higher energy region compared to the as sintered one with the occurrence of an additional peak corresponding to the transition to the |1s13dn+1L-14pσ1 > final state, indicating the oxidation of CuO2 layer. From the X-ray photoelectron spectroscopic studies, it is found that the binding energy of La 3d5/2 is significantly shifted from 834.3 eV (as sintered La2CuO4) to 833.6 eV (as electrochemically oxidized La2CuO4+δ), implying that the covalency of the (La-O) bond is decreased due to the oxygen intercalation. The O 1s spectra do not provide an evidence of the superoxide or peroxide, but the oxide (O2-) with the contaminated carbonate (CO32-) based on the peaks at 529 eV and 532 eV, respectively, which is clearly confirmed by the Auger spectroscopic analysis. Oxygen contents determined by iodometric titration (δ=0.07) and thermogravimetry (δ=0.09) show good coincidence each other, also giving an evidence for the "O2-" nature of excess oxygen. From the above results, it is concluded that "O2-" appeared as O 1s peak at 528.6 eV is responsible for superconductivity of La2CuO4+δ.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.46 no.12
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• pp.986-993
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• 2018

Lateral thrust jet has better maneuverability performance than the control surface like the conventional fin for attitude control or orbital transition of guided weapons. However, in the supersonic region, a jet interaction flow occurs due to the lateral thrust jet during flight, and a complicated flow structure is exhibited by the interaction of the shock wave, boundary layer flow, and the vortex flow. Especially, hit-to-kill interceptors require precise control and maneuvering, so it is necessary to analyze the effect of jet interaction flow. Conventional jet interaction analyses were performed under low altitude conditions, but there are not many cases in the case of medium altitude condition, which has different flow characteristics. In this study, jet interaction flow analysis is performed on the lateral jet controlled interceptor operating at medium altitude. Based on the results, the structural characteristics of the flow field and the changes of aerodynamic coefficient are analyzed.

• Structural Engineering and Mechanics
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• v.78 no.2
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• pp.163-174
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• 2021

Track-bridge interaction has become an essential part in the design of bridges and rails in terms of modern railways. As a unique ballastless slab track, the longitudinal continuous slab track (LCST) or referred to as the China railway track system Type-II (CRTS II) slab track, demonstrates a complex force mechanism. Therefore, a comprehensive track-bridge interaction study between multi-span simply supported beam bridges and the LCST is presented in this work. In specific, we have developed an integrated finite element model to investigate the overall interaction effects of the LCST-bridge system subjected to the actions of temperature changes, traffic loads, and braking forces. In that place, the deformation patterns of the track and bridge, and the distributions of longitudinal forces and the interfacial shear stress are studied. Our results show that the additional rail stress has been reduced under various loads and the rail's deformation has become much smoother after the transition of the two continuous structural layers of the LCST. However, the influence of the temperature difference of bridges is significant and cannot be ignored as this action can bend the bridge like the traffic load. The uniform temperature change causes the tensile stress of the concrete track structure and further induce cracks in them. Additionally, the influences of the friction coefficient of the sliding layer and the interfacial bond characteristics on the LCST's performance are discussed. The systematic study presented in this work may have some potential impacts on the understanding of the overall mechanical behavior of the LCST-bridge system.

• Korean Journal of Metals and Materials
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• v.46 no.7
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• pp.427-436
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• 2008

The effect of dewpoints on annealing behavior and coating characteristics such as wettability and galvannealing kinetics was studied by annealing 0.3wt%Si - 0.1~0.4wt% Mn added interstitial-free high strength steels(IF-HSS). The 0.3wt%Si-0.1wt%Mn steel exhibited good wettability with molten zinc and galvannealing kinetics after annealing when the dewpoint of $H_2-N_2$ mixed gas was above $-20^{\circ}C$. It is shown that the wettability and galvannealing kinetics are directly related to the coverage of the external(surface) oxide formed by selective oxidation during annealing. At $N_2-15%H_2$ annealing atmosphere, the increase of dewpoint results in a gradual transition from external to internal selective oxidation. The decrease of external oxidation of alloying elements with a concurrent increase of their subsurface enrichment in the substrate, showing a larger surface area that was free of oxide particles, contributed to the improved wettability and galvannealing kinetics. On the other hand, the corresponding wettability and galvannealing kinetics were deteriorated with the dewpoints below $-20^{\circ}C$. The continuous oxide layer of network and/or film type was formed on the steel surface, leading to the poor wettability and galvannealing kinetics. It causes a high contact angle between annealed surface and molten zinc and plays an interrupting role in interdiffusion of Zn and Fe during galvannealing process.