• The Transactions of the Korean Institute of Electrical Engineers A
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• v.53 no.7
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• pp.397-404
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• 2004

This paper describes a study of transient characteristics in 765kV untransposed transmission lines. As the 765(kV) system can carry bulk power, some severe fault on the system nay cause large system disturbance. The large shunt capacitance and small resistance of 765kv transmission line make various difficulties for its protection. These problems including current difference between sending and receiving terminals on normal power flow, low order harmonic current component in fault current and current transformer saturation due to the long DC time constant of the circuit etc. must be investigated and solved. The analysis of transient characteristics at sending terminal has been carried out for the single phase to ground fault and 3-phase short fault, etc. The load current, charging current in normal condition and line flows, fault current, THD(Total Harmonic Distortion) of harmonics, time constants have been analysed for the 765kV untransposed transmission line systems.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.783-793
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• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.59-62
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• 2000

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• 전기의세계
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• v.21 no.4
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• pp.15-21
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• 1972

For the conventional DC machine, the armature MMF is negligible compared with field MMF except when the machine is under heavy load or transient conditions. During the motor starting or reversal, the transient armature current and corresponding MMF effect the flux density of each pole in the machine magnetic circuit. However, the circuit flux density is restored to normal values by the field winding MMF after the transient armature current dies in an electromagnetic DC motor. Permanent magnet servomotor have no field windings about the circuit poles to restore circuit flux density through the demagnetized part of each pole after the transient armature MMF dies, and portions of the magnetic circuit stay permanently demagnetized. Thus the problem of stabilizing a magnet pole piece under the influence of the transient armature current need attentions. This work present the recoil operation of the servomotor with PM poles in conjunctions with the influence of the armature reaction effect. The development of an analytical and quantatative study is presented for predicting the regime of the recoil operation under this condition.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.3
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• pp.118-124
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• 1984

This paper investigated the characteristics of transient overvoltages on the tower caused by time varying tower footing resistance in the path of lightning stroke current entering earth on transmission lines. The tower with time varying tower footing resistance was simulated and the transient overvoltageson the tower due to lightning stroke current were computer by Nodal Solution Method. From the results, it was found that the determination of the steady state values as a limit of inductive tower footing resistance causes higher transient overvoltages than CFO voltages of insulator strings and V-T characteristics of the insulator strings should be considered for computation of backflashover rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Progress in Superconductivity and Cryogenics
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• v.5 no.2
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• pp.1-7
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• 2003

Nowadays, one of the serious problems in KEPCO(Korea Electric Power Co-Operation) system is the more higher fault current than the SCC(Short Circuit Capacity) of circuit breaker. There are many alternatives to reduce the increased fault current such as isolations of bus ties, enhancement of SCC of circuit breaker, applications of HVDC-BTB(High Voltage Direct Current-Back to Back) and FCL(fault current limiter). But, these alternatives have some drawbacks in viewpoints of system stability and cost. As the superconductivity technology has been developed, the HTS-FCL(High Temperature Superconductor -Fault Current Limiter) can be one of the attractive alternatives to solve the fault current problem. Under this background, this paper presents the EMTDC(Electro-Magnetic Transient Direct Current) model for resistance type HTS-FCL considering the nonlinear characteristic of final resistance value when quenching phenomena occur.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.10
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• pp.1727-1732
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• 2010

The Current transformer is classified measuring CT and protective CT for their purpose. The measuring CT is required to retain a specified accuracy over the normal range of load currents, but the protective CT must be capable of providing an adequate output over wide range of fault condition. Therefore, the protective CT must determine the transient performance during fault condition. This paper measured peak instantaneous error of the TPY class CT to determine the transient performance directly and indirectly and studied the test results.

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• ETRI Journal
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• v.42 no.5
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• pp.790-798
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• 2020

Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.