• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11b
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• pp.375-380
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• 2002

As the data storage device market demands higher data transfer rate with higher track density. TMR budget is to be tighter so that even minor improvement is sought in HDD development fields. Disk flutter associated with the turbulent air flow inside the chamber becomes of great interest for the reduction of PES especially at OD. A comparative transient turbulent flow study is presented in this paper for the reduction of disk flutter with different housing designs.

• Vacuum Magazine
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• v.3 no.1
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• pp.16-21
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• 2016

FinFETs are able to be scaled down to 22 nm and beyond while suppressing effectively short channel effect, and have superior performance compared to 2-dimensional (2-D) MOSFETs. Bulk FinFETs are built on bulk Si wafers which have less defect density and lower cost than SOI(Silicon-On-Insulator) wafers. In contrast to SOI FinFETs, bulk FinFETs have no floating body effect and better heat transfer rate to the substrate while keeping nearly the same scalability. The bulk FinFET has been developed at 14 nm technology node, and applied in mass production of AP and CPU since 2015. In the development of the bulk FinFETs at 10 nm and beyond, self-heating effects (SHE) is becoming important. Accurate control of device geometry and threshold voltage between devices is also important. The random telegraph noise (RTN) would be problematic in scaled FinFET which has narrow fin width and small fin height.

• Explosives and Blasting
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• v.16 no.3
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• pp.35-48
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• 1998

An overview of the plasma rock fragmentation system, the first commercial application of plasma blasting, is presented. Plasma blasting is based on the fast delivery of stored electrical energy to fracture the rock. The capacitor bank, switching device, cable and blasting electrode employed in the system are described. Utilization of the chemical energy delivered from the electrolyte and the development of a large charge transfer switch using pseudospark enabled the commerciailzaion. The vibration and noise level of the blasting is acceptable in the most ground breaking.

• Journal of the Korean Society of Industry Convergence
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• v.11 no.2
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• pp.65-70
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• 2008

This study presents gas turbine cooling blade by using experimental and numerical works. The review cover researches related to cooling channels using finite element method in rotating blade. Also, the film cooling device and the heat transfer of the external surface of the blade are included. In addition, several methods to be used for the design of the blade, numerical method and experimental techniques are introduced. This work will contribute to improving the manufacturing of engine and the efficiency of gas turbine engines.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2011.11a
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• pp.415-418
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• 2011

It is critical to assess the characteristics of flame response to pressure perturbations for the understanding of nonlinear combustion instabilities. Previous studies can be grouped into flame response upon perturbed, fresh air and fuel mixture, and flame response directly perturbed from longitudinal waves. The present study presents experimental methodology for the understanding of the flame response exposed to transverse acoustic waves generated by loud speakers.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.22 no.7
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• pp.43-48
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• 2008

The characteristics of heat transfer of the bimetal disc for over-current protection device is specified. Bimetal consists of two metals which have a different thermal expansion coefficient. To analyze the thermal characteristics, temperature distribution when bimetal acts as a switch is calculated. As usual, heat source is applied to the bimetal and electric current is heat source in the over-current protection switch. In this paper, thermal distribution are obtained by solving a coupled electro-thermal field with 3D finite element method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.347-350
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• 2001

A typical Mold method is to form a gate electrode, a gate oxide, and emitter tip after fabrication of mold shape using wet-etching of Si substrate. In this study, however, new Mold method using a side wall space structure is used in order to make sharper emitter tip with a gate electrode. Using LPCVD(low pressure chemical vapor deposition), a gate oxide and electrode layer are formed on a Si substrate, and then BPSG(Boro phospher silicate glass) thin film is deposited. After, the BPSG thin film is flowed into a mold as high temperature in order to form a sharp mold structure. Next TiN thin film is deposited as a emitter tip substance. The unfinished device with a glass substrate is bonded by anodic bonding techniques to transfer the emitters to a glass substrate, and Si substrate is etched using KOH-deionized water solution. Finally, we made sharp field emitter array with gate electrode on the glass substrate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.281-284
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• 1995

A molecular photodiode was fabricated with hetero-Langmuir-Blodgett (LB) film consisting of an electron accepter(A) and sensitizer. N-Allyl-N-[3-propylamido-N\",N\"-야(n-octadecyl)]-4,4-bipyridum Dibromide and 7,8-dimethyl-10-dodecyl isoalloxan-zine were used as A and S units, respectively. By aligning hefter-LB film of A/S units on ITO glass with an aluminium thin film, a molecular photodiode with the structure of Metal/Insulator/Metal(MIM) was constructed. Due to excitation by irradiation with a 460nm monochromatic light source, the photo-induced unidirectional flow of electrons in the MIM device could be achieved and was detected as photocurrents. The direction of energy flow was in accordance with the energy level profile across the LB films. The photo switching function was achieved and the rectifying characteristics was obserbed in the molecular devise.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.606-608
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• 2006

This paper describes a 8bit 10MS/s low power pipelined analog-to-digital converter(ADC). To reduce power consumption in proposed ADC, a high gain op-amp that consumes large power in MDAC(multiplying DAC) of conventional pipelined ADC is replaced with simple comparator and current sources. Moreover, differential charge transfer amplifier technique with latch in the sub-ADC reduces the power consumption to less than half compared with the conventional sub-ADC which use high speed comparator. The proposed ADC shows the power consumption of 1.8mW at supply voltage of 1.8V. This proposed ADC is suitable to apply to the portable display device. The circuit was implemented with 0.18um CMOS technology and the core size of circuit is 2.5mm${\times}$1mm.