• Title/Summary/Keyword: Transfer Mobility

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A Network-based IPv6 Handover Scheme for Improving Multimedia Transmission Service in IEEE 802.11 Networks (IEEE 802.11 네트워크에서 멀티미디어 전송 서비스 향상을 위한 네트워크 기반 IPv6 핸드오버 기법)

  • Park, Byung-Joo;Kim, Bong-Ki;Han, Youn-Hee
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.6B
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    • pp.420-429
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    • 2008
  • Currently, IEEE 802.11 Network could not support optimized tunneling scheme and buffering scheme based on movement detection to reduce multimedia data packet loss when an MN move from current subnet to new subnet during handover. It is because IEEE 802.11 did not transfer information of movement detection to AP. In this paper, we proposed new fast handover scheme by using advanced access point and optimized snoop protocol for network based Proxy Mobile IPv6 in IEEE 802.11 Networks. During handover, the proposed scheme reduces both the multimedia data packet loss rate and the packet reordering problems without changing MN's mobility stack in IEEE 802.11 Networks.

Relay Communication Scheme for Connectivity Improvement between Smart Devices in Ship Area Networks (선박 네트워크에서 스마트 장치간 연결성 향상을 위한 릴레이 통신 기법)

  • Lee, Seong Ro;Kim, Beom-Mu;Kwon, Jang-Woo;Jeong, Min-A;Kim, Jin-Woo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.39C no.11
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    • pp.1167-1176
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    • 2014
  • In this paper, a relay communication scheme for enhancing the WiMedia network performance by device's mobility is proposed. WiMedia protocol is suitable for the application that supports the real-time multimedia service in Ship Area Network since it supports high speed data transfer. However, the device's mobility is caused the dramatic change of link state and network topology, and is occurred the degradation of network performance. Therefore, a relay communication scheme for WiMedia network is proposed in this paper. The proposed technique can intelligently treat the change of link state, and solve the degradation of network performance.

A study on PCB Heat Dissipation Characteristics of High Density Power Supply for E-mobility (E-mobility용 고밀도 전원장치의 PCB방열 특성해석에 관한 연구)

  • Kim, Jong-Hae
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.528-533
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    • 2021
  • This paper presents the PCB heat dissipation characteristics of high density DC-DC converter for electric vehicles. This paper also analyzes the heat dissipation structure of the high density DC-DC converter and optimizes the PCB heat dissipation design of the high density power system through thermal analysis simulation. Based on heat transfer theory, the thermal path of general electronic devices is analyzed and the thermal resistance equivalent circuit is modeled in this paper. Additionally, the thermal resistance equivalent circuit of the 500W synchronous buck converter, which is addressed in this paper, is modeled to present a structural heat dissipation path for better thermal performance. The validity of the proposed scheme is verified through the thermal analysis simulation results and experiments applying multi-surface heat dissipation structure to a 500[W](12[V], 41.67[A]) synchronous buck converter prototype with an input voltage 72[V].

Effect of Phenyl Vinyl Methyl Silicone (PVMQ) on Low Temperature Sealing Performance of Fluorosilicone Composites

  • Lee, Jin Hyok;Bae, Jong Woo;Choi, Myoung Chan;Yun, Yu-Mi;Jo, Nam-Ju
    • Elastomers and Composites
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    • v.56 no.4
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    • pp.209-216
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    • 2021
  • In this study, we observed the mechanical properties, thermal stability, and low temperature sealing performance of fluorosilicone elastic composites. When the blend ratio of Phenyl vinyl methyl silicone (PVMQ) was increased, the tensile strength, modulus at 100%, and compression set were decreased. The thermal stability of fluorosilicone elastic composites showed a similar tendency. These were caused by poorer green strength of PVMQ than Fluorosilicone rubber (FVMQ). The change in the tensile strength and elongation at -40℃ showed a decreasing tendency with increasing PVMQ blend ratio. By increasing the PVMQ blend ratio, low-temperature performance was improved. The Dynamic mechanical analysis (DMA) results showed that Tg was decreased and low-temperature performance was improved with increasing PVMQ blend ratio. However tanδ was decreased becaused of the poor green strength and elasticity of PVMQ. From a hysteresis loss at -40℃, the hysteresis loss value was increased and fluorosilicone elastic composites showed the decreasing tendency of elasticity with increasing PVMQ blend ratio. From the TR test, TR10 was decreased with increasing PVMQ blend ratio. FS-4 (45% PVMQ blended composites) showed a TR10 of -68.0℃ that was 5℃ lower than that of FS-1 (100% FVMQ). The gas leakage temperature was decreased with increasing PVMQ blend ratio. The gas leakage temperature of FS-4 was -69.2℃ that was 5℃ lower than that of FS-1. Caused by the polymer chain started to transfer from a glassy state to a rubbery state and had a mobility of chain under Tg, the gas leakage temperature showed a lower value than Tg. The sealing performance at low temperature was dominated by Tg that directly affected the mobility of the polymer chain.

Heterogeneous Network Gateway Architecture and Simulation for Tactical MANET (전술 에드혹 환경에서 이종망 게이트웨이 구조 및 시뮬레이션 연구)

  • Roh, Bong Soo;Han, Myoung Hun;Kwon, Dae Hoon;Ham, Jae Hyun;Yun, Seon Hui;Ha, Jae Kyoung;Kim, Ki Il
    • Journal of the Korea Society for Simulation
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    • v.28 no.2
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    • pp.97-105
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    • 2019
  • The tactical mobile ad-hoc network(MANET) consists of distributed autonomous networks between individual ground nodes, which is effective in terms of network survivability and flexibility. However, due to constraints such as limited power, terrain, and mobility, frequent link disconnection and shadow area may occur in communication. On the other hand, the satellite network has the advantage of providing a wide-area wireless link overcoming terrain and mobility, but has limited bandwidth and high-latency characteristic. In the future battlefield, an integrated network architecture for interworking multi-layer networks through a heterogeneous network gateway (HNG) is required to overcome the limitations of the existing individual networks and increase reliability and efficiency of communication. In this paper, we propose a new HNG architecture and detailed algorithm that integrates satellite network and the tactical MANET and enables reliable data transfer based on flow characteristics of traffic. The simulations validated the proposed architecture using Riverbed Modeler, a network-level simulator.

Role of a PVA layer During lithography of SnS2 thin Films Grown by Atomic layer Deposition

  • Ham, Giyul;Shin, Seokyoon;Lee, Juhyun;Lee, Namgue;Jeon, Hyeongtag
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.3
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    • pp.41-45
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    • 2018
  • Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

A Study on Indoor Route Guidance at Railway Stations for the Transportation Vulnerable (교통약자의 철도역 실내 길안내 방안에 관한 연구)

  • Jae-Bum Shin;Seong-Cheol Kim
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.22 no.4
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    • pp.167-178
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    • 2023
  • Our society is rapidly changing, and there is a growing demand for various convenience services in our daily lives. Among these services, railway and subway stations require tailored wayfinding services to accommodate individuals with disabilities. Currently, signage and information desks are the primary means of navigation. However, individuals with disabilities often rely on assistance from others due to physical discomfort or cognitive impairments. In this paper, we propose a customized wayfinding system within railway stations to assist individuals with disabilities. This system aims to ensure safe and convenient mobility in complex indoor environments, including transfer facilities.

High-performance WSe2 field-effect transistors fabricated by hot pick-up transfer technique (핫픽업 전사기술을 이용한 고성능 WSe2 기반 전계효과 트랜지스터의 제작)

  • Kim, Hyun Ho
    • Journal of Adhesion and Interface
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    • v.21 no.3
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    • pp.107-112
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    • 2020
  • Recently, the atomically thin transition-metal dichalcogenide (TMD) semiconductors have attracted much attention owing to their remarkable properties such as tunable bandgap with high carrier mobility, flexibility, transparency, etc. However, because these TMD materials have a significant drawback that they are easily degraded in an ambient environment, various attempts have been made to improve chemical stability. In this research article, I report a method to improve the air stability of WSe2 one of the TMD materials via surface passivation with an h-BN insulator, and its application to field-effect transistors (FETs). With a modified hot pick-up transfer technique, a vertical heterostructure of h-BN/WSe2 was successfully made, and then the structure was used to fabricate the top-gate bottom-contact FETs. The fabricated WSe2-based FET exhibited not only excellent air stability, but also high hole mobility of 150 ㎠/Vs at room temperature, on/off current ratios up to 3×106, and 192 mV/decade of subthreshold swing.

Analysis of Non-Barrier Space to Promote the Uses of Convenience Facilities at Passenger Facilities by the Visually Handicapped (시각장애인의 여객시설 내부편의시설 이용증진을 위한 무장애 공간 분석(광명역을 중심으로))

  • Kim, Dong-Moon;Kim, Hwang-Bae;Park, Jae-Kook
    • Journal of Korean Society for Geospatial Information Science
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    • v.16 no.2
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    • pp.31-40
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    • 2008
  • The indicators of an advanced society include the overall level of life quality and satisfaction among all the members. The overall life quality has close relationships with accessibility to urban space for the social weak. Access to facilities of interest and right of mobility in urban space are very important issues to the weak class in terms of transportation including the visually handicapped. In particular, great significance is endowed upon transfer facilities, which play mediating roles between facilities like passenger facilities, and the convenience facilities inside for the disabled, which are usually the only means for the disabled to access each facility. As they are provided to the visually handicapped as well, it's very important to analyze the concerned spatial distribution and offer the results. The previous studies on the subject, however, merely covered the perceptions of the users and the related statistical analysis. This study set out to analyze non-barrier space to promote the utilization of convenience facilities at passenger facilities by the visually handicapped and to secure their right of mobility by using a GIS for spatial analysis based on spatial data. The results show that it's urgent to supplement the existing space for the handicapped and that it's necessary to expand convenience facilities for the disabled such as paths with Braille points on them to promote their use of diverse convenience facilities inside.

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Influence of Electrolyte Aging on Electrotinning in Phenolsulfonic Acid Bath (전기주석도금 반응에 미치는 PSA계 도금용액 노화의 영향)

  • Bae Dae Chul;Kim Tae Yeob;Cho Joon Hyung;Lee Jae Ryung;Chang Sam Kyu;Cho Kyung-mox
    • Journal of the Korean Electrochemical Society
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    • v.3 no.3
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    • pp.162-168
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    • 2000
  • The influence of phenolsulfunate concentrations on electroplating characteristics and electrochemical behaviors was investigated with a viewpoint of electrolyte aging using the circulation cell and potentiostate And comparison of tinplate coating appearance such as glossiness and Image clarify has been also studied with varying of phenolsulfonic acid (PSA) solutions. As the aging of electrolyte proceeded, the limiting current density was moved to a lower current density region by the limitation of mass transfer, and higher phenolsulfunate concentrations resulted in the narrower optimum current density range and deterioration of coating surface of tinplates. The difference of the limiting current density was not remarkable with increasing electrolyte temperature. Thus the electrolyte aging was attributed to the limitation of thermally-activated process such as mass transfer of reducible ions. It has also been considered that the accumulation of phenolsulfonate suppressed normal electrotinning reaction by reducing the mobility of stannous ions, taking into account of the smaller effect of electrolyte aging. Experiments showed similar polarization behavior between the electrolyte of high phenolsufonate solution and the aged one, which comes to conclude that the accumulation of phenolsulfonate is one of the major causes of electrolyte aging.