• Applied Chemistry for Engineering
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• v.31 no.1
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• pp.13-18
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• 2020

Iron oxide nanoparticles were microencapsulated using fibroin, a protein polymer of silk fiber, for theragnostic applications. The content of iron oxide was determined to be 4.28% by thermogravimetric analysis and 5.11% by magnetometer. A suspension of murine fibroblast 3T3 cells grown in medium supplemented with iron oxide-microcapsules turned clear in response to the magnetic force and the cells aggregated to the magnet direction. Neodymium magnets placed on the top of the culture dish, and attracted cells to the center of the culture surface. The cells collected on the culture surface aggregated to form a rough spheroid of 2 mm in a diameter after 72 h. In the outer layer of the cell aggregate, cells were relatively large and gathered together to form a dense tissue, but the central part was observed to undergo cell death due to the mass transfer restriction. In the outer layer, iron oxide-microcapsules were lined up like chains in the direction of magnetic force. Using microCT, it was demonstrated that the iron oxides inside the cell aggregate were not evenly distributed but biased to the magnetic direction.

• Korean Journal of Environmental Agriculture
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• v.15 no.3
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• pp.372-382
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• 1996

In order to elucidate the relationship between the mobility of heavy metals in soil and their uptake by plants, the soil samples collected from the Mangyeong River area were analyzed for the contents and existing forms of the heavy metals and the correlation between the contents of heavy metals in the soil and those in various parts of rice plants therefrom. The soil samples were collectes from ten sites in the paddy fields in 1982 and 1990, respectively, and the analysis on heavy metals including Cd, Zn, Cu and Pb was performed. The results are as follows: Total contents of heavy metals in the samples of 1990 were higher than those of 1982. The extent of increase was that Cd, Zn, Cu and Pb were 3, 29, 59 and 8% in top soil and 8, 50, 91 and 8% in sub-soil, respectively. The order of increasing ratio was Cu > Zn > Pb > Cd and the variation of Cd content by sequentially different extraction was organically bound > dilute acid-extractable=Fe-Mn oxide bound > exchangeable > residual fractions and the content of Cd with organically bound was $46.62{\sim}48.08$ and $41.18{\sim}50.18%$ of total Cd in top and sub-soil, respectively. The ratios of immobile heavy metals, Cd, Pb, Cu and Zn, bound within an oxide or silicate matrix of Fe-Mn oxide in top-soil were 21.25, 35.98, 74.18 and 82.12%, respectively, and consequently their mobile ratios of exchangeable, dilute acid-extractable and organically bound were more than 17.88%. Those of mobile Cd, Pb, Cu and Zn were 78.25, 64.02, 25.82 and 17.88%, respectively. Except for Pb a correlation between the contents of Cd, Zn, and Cu of exchangeable and dilute acid-extractable in top-soil and those in leaf blade, stem and panicle axis was significant, but was not significant in sub-soil.

• Economic and Environmental Geology
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• v.54 no.1
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• pp.21-33
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• 2021

The purpose of this study is to determine the order of priority for the use of amendments, matching the optimal amendment to the specific site in Korea. This decision-making process must prioritize the stabilization and economic efficiency of amendment for heavy metals and metalloid based on domestic site contamination scenarios. For this study, total 5 domestic heavy metal contaminated sites were selected based on different pollution scenarios and 13 amendments, which were previously studied as the soil stabilizer. Batch extraction experiments were performed to quantify the stabilization efficiency for 8 heavy metals (including As and Hg) for 5 soil samples, representing 5 different pollution scenarios. For each amendment, the analyses using XRD and XRF to identify their properties, the toxicity characteristics leaching procedure (TCLP) test, and the synthetic precipitation leaching procedure (SPLP) test were also conducted to evaluate the leaching safety in applied site. From results of batch experiments, the amendments showing > 20% extraction lowering efficiency for each heavy metal (metalloid) was selected and the top 5 ranked amendments were determined at different amount of amendment and on different extraction time conditions. For each amendment, the total number of times ranked in the top 5 was counted, prioritizing the feasible amendment for specific domestic contaminated sites in Korea. Mine drainage treatment sludge, iron oxide, calcium oxide, calcium hydroxide, calcite, iron sulfide, biochar showed high extraction decreasing efficiency for heavy metals in descending order. When the economic efficiency for these amendments was analyzed, mine drainage treatment sludge, limestone, steel making slag, calcium oxide, calcium hydroxide were determined as the priority amendment for the Korean field application in descending order.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.331-331
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• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.662-668
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• 1994

The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.

• Korean Journal of Materials Research
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• v.14 no.6
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• pp.402-406
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• 2004

$WSi_2$, $TiSi_2$, $CoSi_2$, and $TaSi_2$ are general silicides used today in semiconductor devices. $WSi_2$ thin films have been proposed, studied and used recently in CMOS technology extensively to reduce sheet resistance of polysilicon and $n^{+}$ region. However, there are several serious problems encountered because $WSi_2$ is oxidized and forms a native oxide layer at the interface between $WSi_2$ and $Si_3$$N_4$. In this study, we have introduced 20 $slm-N_2$ gas from top to bottom of the furnace in order to control native oxide films between $WSi_2$ and $Si_3$$N_4$ film. In resulting SEM photographs, we have observed that the native oxide films at the surface of $WSi_2$ film are removed using the long injector system.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.3
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• pp.651-656
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• 2014

This paper analyzed the change of subthreshold swing for channel doping of asymmetric double gate(DG) MOSFET. The subthreshold swing is the factor to describe the decreasing rate of off current in the subthreshold region, and plays a very important role in application of digital circuits. Poisson's equation was used to analyze the subthreshold swing for asymmetric DGMOSFET. Asymmetric DGMOSFET could be fabricated with the different top and bottom gate oxide thickness and bias voltage unlike symmetric DGMOSFET. It is investigated in this paper how the doping in channel, gate oxide thickness and gate bias voltages for asymmetric DGMOSFET influenced on subthreshold swing. Gaussian function had been used as doping distribution in solving the Poisson's equation, and the change of subthreshold swing was observed for projected range and standard projected deviation used as parameters of Gaussian distribution. Resultly, the subthreshold swing was greatly changed for doping concentration and profiles, and gate oxide thickness and bias voltage had a big impact on subthreshold swing.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Journal of Sensor Science and Technology
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• v.4 no.3
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• pp.80-88
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• 1995

This paper presents the fabrication of a metal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below 1nA, and low programming voltage, about 9V, could be obtained in antifuse device comprising $Al/Ta_{2}O_{5}(10nm)/SiO_{2}(10nm)/TiW$ structure and OFF resistance of 3$3.65M{\Omega}$ and ON resistance of $7.26{\Omega}$ could be also obtained. This $Ta_{2}O_{5}/SiO_{2}$ based antifuse structures will be promising for highly reliable programmable device.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.445-446
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• 2002

The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, th ε groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.