• 한국태양에너지학회 논문집
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• 제26권4호
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• pp.55-61
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• 2006

Titanium oxide ($TiO_2$) films are deposited on the indium tin oxide (ITO) substrate in an $Ar/O_2$ atmosphere by using reactive RF (Radio Frequency) magnetron sputtering technique, and Electrochromic properties and durability of $TiO_2$ films deposited at different preparation conditions are investigated by using UV-VIS spectrophotometer and cyclic voltammetry Li+ interalation/deintercalation in $TiO_2$ films shows that the electrochromic properties and durability of as-deposited films strongly depend on gas pressure $TiO_2$ films formed in our sputtering conditions are found to remain transparent, irrespective of their Li+ ion contents. The optimum sputtering conditions for film as passive counter electrode in electrochromic devices are working pressure of $1.0\;{\times}\;10^{-2}\;torr$ and oxygen flow raes of $10{\sim}15\;sccm$, respectively.

• 한국재료학회지
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• 제14권11호
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• Journal of Electrical Engineering and Technology
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• 제6권5호
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• pp.684-687
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• 2011

In this study, we investigate the photovoltaic performance of transparent conductive indium tin oxide (ITO), titanium-doped indium oxide (ITiO), and fluorine-doped tin oxide (FTO) films. ITO and ITiO films are prepared by radio frequency magnetron sputtering on soda-lime glass substrate at $300^{\circ}C$, and the FTO film used is a commercial product. We measure the X-ray diffraction patterns, AFM micrographs, transmittance, sheet resistances after heat treatment, and transparent conductive characteristics of each film. The value of electrical resistivity and optical transmittance of the ITiO films was $4.15{\times}10^{-4}\;{\Omega}-cm$. The near-infrared ray transmittance of ITiO is the highest for wavelengths over 1,000 nm, which can increase dye sensitization compared to ITO and FTO. The photoconversion efficiency (${\eta}$) of the dye-sensitized solar cell (DSC) sample using ITiO was 5.64%, whereas it was 2.73% and 6.47% for DSC samples with ITO and FTO, respectively, both at 100 mW/$cm^2$ light intensity.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권3호
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• pp.252-258
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• 2013

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1996년도 재료학회 춘계학술발표회
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• pp.31-31
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• 1996

• 한국진공학회지
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• 제11권3호
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• pp.141-150
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• 2002

낮은 산소 부분압과 긴 타깃-기판 거리에서 DC 반응이온 마그네트론 스퍼터링(reactive magnetron sputtering ; RMS) 방법으로 $TiO_2$ 박막을 증착하였으며, 증착되는 박막에 end-Hall 이온 소스를 이용하여 아르곤 이온빔 보조 증착을 해 주었다. $TiO_2$ 박막의 광학적 특성은 분광광도계에서 측정된 투과율과 반사율 스펙트럼을 이용하여 분석하였고, 구조적 특성은 AFM과 XRD를 이용하여 분석하였다. 이온빔 보조 RMS 방법으로 증착된 $TiO_2$ 박막은 일반적인 RMS로 증착된 박막보다 조밀도가 높고, 흡수가 낮으며, 표면거칠기가 작았다. 본 연구에서는 이온빔 보조 RMS 방법이 유전체 광학박막 코팅에 적용될 수 있음을 보여준다.

• 한국재료학회지
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• 제19권6호
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• pp.325-329
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• 2009

Titanium dioxide thin films were fabricated as hydrogen sensors and its sensing properties were tested. The titanium was deposited on a $SiO_2$/Si substrate by the DC magnetron sputtering method and was oxidized at an optimized temperature of $850^{\circ}C$ in air. The titanium film originally had smooth surface morphology, but the film agglomerated to nano-size grains when the temperature reached oxidation temperature where it formed titanium oxide with a rutile structure. The oxide thin film formed by grains of tens of nanometers size also showed many short cracks and voids between the grains. The response to 1% hydrogen gas was ${\sim}2{\times}10^6$ at the optimum sensing temperature of $200^{\circ}C$, and ${\sim}10^3$ at room temperature. This extremely high sensitivity of the thin film to hydrogen was due partly to the porous structure of the nano-sized sensing particles. Other sensor properties were also examined.

• 한국재료학회지
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• 제12권6호
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• pp.452-457
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• 2002

Titanium oxide films were prepared by RF reactive magnetron sputtering. The effect of sputtering conditions on structural and optical properties was investigated systemically as a function of sputtering pressure(5~20 mTorr) and $O_2/Ar$ flow ratio(0.08~0.4). The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. At low sputtering pressure and $O_2/Ar$ flow ratio, the films had preferred orientations along [101] and [200] directions. As the sputtering pressure and $O_2/Ar$ flow ratio increased, the intensity of the 101 and 200 diffraction peaks decreased gradually. The microstructure of the sputtered films showed the fine grain size (20nm~50nm) and columnar microcrystals perpendicular to the substrate. With increasing the sputtering pressure and decreasing $O_2/Ar$ flow ratio, the sputtered films showed the more porous columnar structure. XPS analysis showed that stoichiometric $TiO_2$ films were deposited at 7 mTorr sputtering pressure and 0.2 $O_2/Ar$ flow ratio. The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. Ellipsometeric analysis showed that the refractive index increased from 2.32 to 2.46 as the sputtering pressure decreased. The packing density calculated using the refractive index varied from 0.923 to 0.976, indicating that $TiO_2$films became denser as the sputtering pressure decreased.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.1-10
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• 2010

This is an overview paper reporting our most recent work on processing and microstructure of nano-structured oxides and their photoluminescence and photo-catalysis properties. Zinc oxide and related transition metal oxides such as vanadium pentoxide and titanium dioxide were produced by a combination of magnetron sputtering, hydrothermal growth and atmosphere controlled heat treatment. Special morphology and microstructure were created including nanorods arrays, core-brushes, nano-lollipops and multilayers with very large surface area. These structures showed special properties such as much enhanced photoluminescence and chemical reactivity. The photo-catalytic properties have also been promoted significantly. It is believed that two factors contributed to the high reactivity: the large surface area and the interaction between different oxides. The transition metal oxides with different band gaps have much enhanced photoluminescence under laser stimulation. Use of these complex oxide structures as electrodes can also improve the energy conversion efficiency of solar cells. The mixed oxide complex may provide a promising way to high-efficiency photo emitting materials and photo-catalysts.

• 한국표면공학회지
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• 제52권6호
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• pp.306-309
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• 2019

Titanium (Ti) doped indium oxide (In₂O₃) films were deposited on glass substrates by RF magnetron sputtering and the films were rapid thermal annealed at 100, 200, and 300℃, respectively to investigate the influence of the rapid annealing on the opto-electrical performance of the films. The grain size of In₂O₃ (222) plane increased with annealing temperatures and their electrical resistivity decreased to as low as 8.86×10^-4 Ωcm at 300℃. The visible transmittance also improved from 77.1 to 79.5% when the annealing temperature increased. The optical band gap of the TIO films shifted from 4.010 to 4.087 eV with increases in annealing temperature from room temperature to 300℃. The figure of merit shows that the TIO films annealed at 300℃ had better optical and electrical performance than the other films prepared using lower-temperature or no annealing.