• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.245-245
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• 2012

차세대 디스플레이로 각광받고 있는 AMOLED에 대한 관심이 높아짐에 따라 구동 소자의 연구가 활발히 이루어지고 있다. 산화물 반도체 박막 트랜지스터는 비정질 실리콘 박막 트랜지스터에 비해 100 $cm^2$/Vs 이하의 높은 이동도와 우수한 전기적 특성으로 AMOLED 구동 소자로서 학계에서 입증되어왔고, 현재 여러 기업에서 산화물 반도체를 이용한 박막 트랜지스터 제작 연구가 활발히 이루어지고 있다. 본 연구는 열처리 조건을 가변하여 제작한 산화물 반도체 박막 트랜지스터의 전기적 특성 분석을 목적으로 한다. 실리콘 기판에 oxidation 공정을 이용하여 SiO2 100 nm, DC스퍼터링을 이용하여 ITZO (Indium-Tin-Zinc Oxide) 산화물 반도체 박막 50 nm, 증착된 산화물 반도체 박막의 열처리 후, evaporation을 이용하여 source/drain 전극 Ag 150 nm 증착하여 박막 트랜지스터를 제작하였다. 12 sccm의 산소유량, 1시간의 열처리 시간에서 열처리 온도 $400^{\circ}C$, $200^{\circ}C$의 샘플은 각각 이동도 $29.52cm^2/V{\cdot}s$, $16.15cm^2/V{\cdot}s$, 문턱전압 2.61 V, 6.14 V, $S{\cdot}S$ 0.37 V/decade, 0.85 V/decade, on-off ratio 5.21 E+07, 1.10 E+07이었다. 30 sccm의 산소유량, 열처리 온도 $200^{\circ}C$에서 열처리 시간 1시간, 1시간 30분 샘플은 각각 이동도 $12.27cm^2/V{\cdot}s$, $10.15cm^2/V{\cdot}s$, 문턱전압 8.07 V, 4.21 V, $S{\cdot}S$ 0.89 V/decade, 0.71 V/decade, on-off ratio 4.31 E+06, 1.05 E+07이었다. 산화물 반도체의 열처리 효과 분석을 통하여 높은 열처리 온도, 적은 산소의 유량, 열처리 시간이 길수록 이동도, 문턱전압, $S{\cdot}S$의 산화물 박막 트랜지스터 소자의 전기적 특성이 개선되었다.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.108-110
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• 2009

Transparent Sn-doped $In_2O_3$ (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrates by reactive magnetron sputtering to compare the properties of the films. They were then annealed in a vacuum of $1{\times}10^{-2}\;Pa$ at temperatures ranging from 150 to $450^{\circ}C$ for 20 min to determine the effect of the annealing temperature on the properties of the films. As-deposited 100 nm thick ITO films exhibit a sheet resistance of $130{\Omega}/{\square}$ and optical transmittance of 77% at a wavelength length of 550 nm. By inserting a 5 nm-thick Au layer in ITO/metal/ITO (IMI) films, the sheet resistance was decreased to as low as $20{\Omega}/{\square}$ and the optical transmittance was decreased to as little as 73% at 550 nm. Post-deposition annealing of ITO/Au/ITO films led to considerably lower electrical resistivity and higher optical transparency. In the Xray diffraction pattern, as-deposited ITO films did not show any diffraction peak, whereas as-deposited ITO/ Au/ITO films have Au (222) and $In_2O_3$ (110) crystal planes. When the annealing temperature reached the 150 - $450^{\circ}C$ range, the both diffraction peak intensities increased significantly. A sheet resistance of $8{\Omega}/{\square}$ and an optical transmittance of 82% were obtained from the ITO/Au/ITO films annealed at $450^{\circ}C$.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.2
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• pp.87-91
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• 2011

Single layer Sn doped $In_2O_3$ (ITO) films and ITO 50 nm / Au 10 nm / ITO 40 nm (IAI) multilayer films were prepared with electron beam assisted magnetron sputtering on glass substrates. The effects of the Au interlayer, post-deposition atmosphere annealing and intense electron irradiation on the methanol gas sensitivity were investigated at room temperature. As deposited ITO films did not show any diffraction peaks in the XRD pattern, while the IAI films showed the diffraction peak for $In_2O_3$ (400). In this study, the gas sensitivity of ITO and IAI films increased proportionally with the methanol vapor concentration and an intense electron beam irradiated IAI film shows the higher sensitivity than the others film. From the XRD pattern, it is supposed that increased crystallization promotes the gas sensitivity. This approach is promising in gaining improvement in the performance of IAI gas sensors used for the detection of methanol vapor at room temperature.

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.463-466
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• 2006

직접 알콜 연료전지는 액체인 알콜을 직접 연료전지에 공급하여 연소시킴으로써 높은 효율을 갖는 휴대용전원으로 주목받는 장치이다. 직접 알콜 연료전지에 담지체로 사용되는 탄소 소재는 넓은 표면적과 우수한 전기전도도를 가지고 있다는 장점 있으나 금속 촉매와의 상호작용이 약하여 촉매 활성에 영향을 주지 못한다. 산화물을 담지체로 사용할 경우 이러한 금속-담지체 간의 상호작용으로 인한 촉매활성 증가 및 입자성장 억제의 효과를 기대할 수 있다. 본 연구에서는, 안티몬 도핑된 주석산화물 (Sb-doped SnO2 : ATO nanoparticle)을 직접 메탄올 연료전지용 담지체어 적용하였으며 합성 과정은 다음과 같다. SnC14 5H2O SbC13, NaOH, HCl 수용액 혼합물을 삼구 플라스크에 넣고 $100^{\circ}C$ 온도에서 환류(reflux) 시킨 후 세척 및 건조하여 Air 분위기에서 열처리하였다. 합성된 산화물 수용액에 폴리올 방법으로 합성된 백금 콜로이드를 담지하였으며, 세척과 건조를 통하여 산화물에 담지된 백금 촉매를 촉매를 합성하였다. 촉매의 구조분석을 위해 XRD, TEM을 사용하였으며, 전극촉매로서의 활성을 평가하기 위해 cyclic voltammetry을 평가하였다. 본 연구에서는 백금의 담지량에 따른 Costripping voltammetry특성과 메탄올 및 에탄올 산화 반응 특성에 대하여, 탄소를 담지체로 사용한 Pt/C 촉매와 비교 평가하였다. 알콜 산화반응 평가결과, 주석산화물에 담지한 촉매가 탄소를 담지체로 사용한 촉매보다 우수한 활성을 나타내었으며 활성증가는 메탄올에 비해 에탄올 산화 반응의 경우 크게 증가하였다. 막과 비교해 보았다. $ZrO_2$ 입자는 전도성이며 동시에 친수성을 나타내기 때문에 상용 막에 비하여 함수율 및 수소이온 전도도가 우수하게 나타났다. 복합막의 이러한 물성은 $100^{\circ}C$이상의 고온에서 전해질 막 내의 물 관리를 용이하게 한다. 단위 전지 운전 온도 $130^{\circ}C$, 상대습도 37%의 운전 조건에서도 상당히 우수한 전지 성능을 보임에 따라 고온/저가습 조건에서 상용 Nafion 112 막보다 우수한 막 특성을 나타냄을 확인하였다.소/배후방사능비는 각각 $2.18{\pm}0.03,\;2.56{\pm}0.11,\;3.08{\pm}0.18,\;3.77{\pm}0.17,\;4.70{\pm}0.45$ 그리고 $5.59{\pm}0.40$이었고, $^{67}Ga$-citrate의 경우 2시간, 24시간, 48시간에 $3.06{\pm}0.84,\;4.12{\pm}0.54\;4.55{\pm}0.74 $이었다. 결론 : Transferrin에 $^{99m}Tc$을 이용한 방사성표지가 성공적으로 이루어졌고, $^{99m}Tc$-transferrin의 표지효율은 8시간까지 95% 이상의 안정된 방사성표지효율을 보였다. $^{99m}Tc$-transferrin을 이용한 감염영상을 성공적으로 얻을 수 있었으며, $^{67}Ga$-citrate 영상과 비교하여 더 빠른 시간 안에 우수한 영상을 얻을 수 있었다. 그러므로 $^{99m}Tc$<

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.198-203
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• 2016

We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

• Journal of the Korean Electrochemical Society
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• v.11 no.3
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• pp.141-146
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• 2008

Electrocatalytic activities and stabilities of Pt supported on Sb-doped $SnO_2$ (ATO) were examined for ethanol oxidation reactions. Pt colloidal particles were deposited on ATO nanoparticles (Pt/ATO) and the prepared electrocatalysts were characterized by X-ray diffraction, transmission electron microscopy (TEM), and cyclic voltammetry. Electrochemical activity of the Pt/ATO for ethanol electro-oxidation was compared to those of Pt supported on carbon (Pt/C) and commercial PtRu/C. The activitiy of the Pt/ATO was much higher than those of the Pt/C and commercial PtRu/C. The Pt/ATO exhibited much higher electrochemical stabilities than the Pt/C in 0.5M ${H_2}{SO_4}$ and in 0.5M ${H_2}{SO_4}$/1M ${C_2}{H_5}OH$. According to TEM, the growth rate of Pt particles was lower in the Pt/ATO than it was in the Pt/C. The ATO nanoparticle appears to be a promising support material that promotes electrochemical reactions and stabilizes catalyst particles in direct ethanol fuel cell.

• Journal of the Korean Electrochemical Society
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• v.2 no.3
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• pp.130-133
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• 1999

In this work, a capacitance-type alcohol gas sensor using porous silicon layer is developed to apply for breath alcohol measurement and its characteristics are estimated at room temperature. Current alcohol sensors using metal oxides such as tin-oxide are not only difficult to measure low alcohol concentration, but also should heat at $200\;to\;400^{\circ}C$ to improve the sensitivity. But the sensor using porous silicon layer has good sensitivity even at room temperature by very large effective surface area and suitable structure to fabricate integrated micro sensors. In the experiment, the capacitance was measured for the range of 0 to $0.5\%$ alcohol concentration with the interval of $0.05\%$, in which alcohol solution was kept at 25, 36, and $45^{\circ}C$ by a heater. As the result, good linearity was observed and the capacitance increased about 1.1, 2.6 and $4.6\%$ per the increment of $0.1\%$ alcohol concentration each temperature, respectively, at the frequency of 120 Hz.

• Journal of the Korean institute of surface engineering
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• v.39 no.5
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• pp.206-209
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• 2006

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ without substrate heating in comparison with $2.65\;{\times}\;10{-3}\;{\Omega}{\cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar\;+\;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.