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http://dx.doi.org/10.5573/JSTS.2016.16.2.198

Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors  

Song, Chang-Woo (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Kyung-Hyun (Nano Interface Device Team, Electronics and Telecommunications Research Institute)
Yang, Ji-Woong (School of Electrical and Electronics Engineering, Chung-Ang University)
Kim, Dae-Hwan (School of Electrical and Electronics Engineering, Chung-Ang University)
Choi, Yong-Jin (School of Electrical and Electronics Engineering, Chung-Ang University)
Hong, Chan-Hwa (Nano Interface Device Team, Electronics and Telecommunications Research Institute)
Shin, Jae-Heon (Nano Interface Device Team, Electronics and Telecommunications Research Institute)
Kwon, Hyuck-In (School of Electrical and Electronics Engineering, Chung-Ang University)
Song, Sang-Hun (School of Electrical and Electronics Engineering, Chung-Ang University)
Cheong, Woo-Seok (Nano Interface Device Team, Electronics and Telecommunications Research Institute)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.16, no.2, 2016 , pp. 198-203 More about this Journal
Abstract
We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.
Keywords
Mg suppression layer; a-ITZO TFT; electrical performances and stabilities; oxygen vacancy;
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