• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.22-22
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• 2009

The silver thick film has been used in many industries such as display, chip, solar cell, automobile, and decoration with conventional heating. The silver thick film is fired with optimal time and temperature. However, decreasing the fabrication time is required due to high production power. Furthermore, there is a problem that silver in electrode is diffused throughout any substrates. For inhibiting the Ag diffusion and long fabrication time we considered a microwave heating. We investigated firing of silver thick film with conventional and microwave heating. The temperature of substrate was measured by thermal paper and the temperature of substrate was under $100\;^{\circ}C$ The shrinkage of electrode was measured with optical microscopy and optical profilometry. The shrinkage of electrode heat treated with microwave for 5min was similar to the that fired by the conventional heating for several hours. After firing by two types of heating, the diffusion of silver was determined using a optical microscope. The microstructure of sintered silver thick film was observed by SEM. Based on our results, the microwave heating should be a candidate heating source for the fabrication electronic devices in terms of saving the tact time and preventing the contamination of substrate.

• Journal of the Korean institute of surface engineering
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• v.52 no.1
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• pp.30-36
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• 2019

In this study, we investigated the effects of anodizing time, dyeing treatment time, and variations in coloring concentration on the color of an AA5052 alloy processed by dye-treated anodizing. The outward color of the anodized film changed to deep red according to increases in anodizing time, dyeing treatment time, and coloring concentration; accordingly, lightness $L^*$ decreased and saturation $a^*$ and $b^*$ increased. The concentration of the dye and the UV-visible absorbance showed a nearly perfect linear relationship, allowing a quantitative analysis of the absorbed dye. Because the quantity of absorbed dye increased as anodizing time, dyeing treatment time, and coloring concentration increased, the outward color of the anodized film deepened. In addition, from the GD-OES depth profile, we found that the dye was preferentially absorbed on the surface of the porous anodized film.

• Polymer(Korea)
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• v.24 no.5
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• pp.713-720
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• 2000

A polymer/iodine complex film was prepared using syndiotactic poly(vinyl alcohol) (s-PVA) with number-average degree of polymerization of 900 and syndiotactic diad content of 63.1%. In comparison with atactic-PVA/iodine films, degree of polarization of the s-PVA/iodine film was improved up to over 99% although a lower transmittance was obtained. By soaking in iodine/potassium iodide aqueous solution of a lower iodine concentration and subsequent drawing by 4 times, s-PVA/iodine film of a higher transmittance and degree of polarization was produced. The degree of iodine desorption of the s-PVA/iodine film in water were very low. The crystallinity and the d-spacing and crystal size of (100) plane increased at the early stage of soaking time, however, remained constant or decreased slightly with increasing soaking time. In consequence, s-PVA/iodine complex formation took place mainly inside crystal region at the initial stage of soaking time, whereas it occurred outside crystal region or physical adsorption of iodine dominated after sufficient soaking.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.16-19
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from 27$^{\circ}C$ to 30$0^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.147-154
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• 2014

Formation behavior of PEO (Plasma Electrolytic Oxidation) films on AZ31 Mg alloy was studied in aqueous solutions containing various concentrations of hydroxide ion ($OH^-$) and silicate ion ($SiO_3{^{2-}}$) by voltage-time curves, and corrosion resistance of the PEO film-covered specimen was investigated by immersion test in 0.5 M NaCl solution. From the analyses of the voltage-time curves, it is suggested that two different types of anions are essentially needed for the formation of PEO films on AZ31 Mg alloy: film formation agent and local film breakdown agent. $SiO_3{^{2-}}$ ion acts only as a film formation agent but $OH^-$ ion acts not only as a film formation agent but also film breakdown agent. The PEO films prepared on AZ31 Mg alloy in alkaline silicate solution showed very good corrosion resistance without any pitting or filiform corrosions up to 480 h of immersion in 0.5 M NaCl.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2002.09a
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• pp.260-262
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• 2002

An accurate measurement of dose distribution is indispensable to perform radiation therapy planning. A measurement technique using a radiographic film, which is called a film dosimetry, is widely used because it is easy to obtain a dose distribution with a good special resolution. In this study, we tried to develop an analyzing system for the film dosimetry using usual office automation equipments such as a personal computer and an image scanner. A film was sandwiched between two solid water phantom blocks (30 ${\times}$ 30 ${\times}$ 15cm). The film was exposed with Cobalt-60 ${\gamma}$-ray whose beam axis was parallel to the film surface. The density distribution on the exposed film was stored in a personal computer through an image scanner (8bits) and the film density was shown as the digital value with NIH-image software. Isodose curves were obtained from the relationship between the digital value and the absorbed dose calculated from percentage depth dose and absorbed dose at the reference point. The isodose curves were also obtained using an Isodose plotter, for reference. The measurements were carried out for 31cGy (exposure time: 120seconds) and 80cGy (exposure time: 300seconds) at the reference point. While the isodose curves obtained with our system were drawn up to 60% dose range for the case of 80cGy, the isodose curves could be drawn up to 80% dose range for the case of 31cGy. Furthermore, the isodose curves almost agreed with that obtained with the isodose plotter in low dose range. However, further improvement of our system is necessary in high dose range.

• Korean Journal of Optics and Photonics
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• v.14 no.5
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• pp.565-569
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• 2003

We designed a transflective-type LCD using a twisted VA mode. Generally, a VA mode had a blue shift due to intrinsic properties. We solved this problem using spectroscopic compensation film. We used the front scattering film and negative C-plate to improve characteristics of the viewing angle and contrast ratio. As a result, we found that proposed the transflective-type TVA mode had a contrast ratio of about 80:1, a response time of 22 ms, and a reflectance of 25% in comparison with the standard MgO reflector.

• Journal of the Semiconductor & Display Technology
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• v.18 no.4
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• pp.124-128
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• 2019

In this paper, a high temperature plastic film type water level sensor was developed. The high temperature film type water level sensor was manufactured by attaching a copper film to a polyimide film which can be used for a long time at 250℃, by laminating process and patterning the electrode by etching process. For the performance evaluation of the developed film type water level sensor, the temperature dependence of the capacitance was measured, and the deformation was examined after standing for 8 hours in 150℃ air. The developed film type water level sensor can be used at up to 150℃, and can be applied to electric ports and steam devices.

• Korean Journal of Materials Research
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• v.29 no.11
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• pp.715-719
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• 2019

Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). $Mo(CO)_6$ and $H_2$ plasma are used as precursor. $H_2$ plasma is induced between ALD cycles for reduction of $Mo(CO)_6$ and Mo film is deposited on Si substrate at $300^{\circ}C$. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is $176{\mu}{\Omega}{\cdot}cm$ at $Mo(CO)_6$ pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

• Corrosion Science and Technology
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• v.4 no.6
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• pp.217-221
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• 2005

In the present investigation, holographic interferometry was utilized for the first time to monitor in situ the thickness of the oxide film of aluminium samples during anodization processes in boric acid solutions. The anodization process (oxidation) of the aluminium samples was carried out by the technique of the electrochemical impedance spectroscopy(EIS), in different concentrations of boric acid (0.5-5.0% $H_3BO_3$) at room temperature. In the mean time, the real-time holographic interferometry was used to measure the thickness of anodized (oxide) film of the aluminium samples in solutions. Consequently, holographic interferometry is found very useful for surface finish industries especially for monitoring the early stage of anodization processes of metals, in which the thickness of the anodized film of the aluminium samples can be determined without any physical contact. In addition, measurements of electrochemical values such as the alternating current (A.C) impedance(Z), the double layer capacitance($C_{dl}$), and the polarization resistance(Rp) of anodized films of aluminium samples in boric acid solutions were made by the electrochemical impedance spectroscopy(EIS). Attempts to measure electrochemical values of Z, Cdl, and Rp were not possible by holographic interferometry in boric acid especially in low concentrations of the acid. This is because of the high rate of evolutions of interferometric fringes during the anodization process of the aluminium samples in boric acid, which made measurements of Z, Cdl, and Rp are difficult.