• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.153-156
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• 2004

The $Pb(Zr_{0.4}Ti_{0.6})O_3/Pb(Zr_{0.6}Ti_{0.4})O_3$ [PZT(4060)/(6040)] heterolayered thin films were deposited by RF sputtering method on the $Pt/TiO_2/SiO_2/Si$ substrate. The effects of the structural and dielectric properties of PZT heterolayered thin films were investigated. The MFM(Metal Ferroelectric Metal) type capacitors were made using the PZT(6040)/(4060) heterolayered thin films deposited with optimum deposition condition. An enhanced dielectric property was observed in the PZT(4060)/(6040) thin films. Investigating the dielectric constant and dielectric loss characteristics. the application for the next-generation dielectric thin films and memory devices were studied.

• 대한화학회지
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• 제57권4호
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• pp.489-492
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• 2013

N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

• 한국세라믹학회지
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• 제40권2호
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• pp.198-205
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• 2003

R.F. Magnetron Sputtering법을 이용하여 Pt/Ti/ $SiO_2$/Si기판 위에 seed-layers와 $Ba_{0.66}$S $r_{0.34}$Ti $O_3$박막을 제조하였다. 다양한 기판온도에 따른 BST 박막의 전기적인 특성(정전용량과 누설전류)과 seed-layer층이 BST 박막에 미치는 영향을 조사하였다. BST 박막은 seed-layer층을 삽입함으로써 박막의 결정성이 향상되었고, 박막의 기판온도(결정화온도)도 상당히 낮출 수 있었다. 순수한 BST에 비하여 seed-layer를 삽입한 BST는 높은 유전상수와 낮은 유전손실 및 낮은 누설전류를 가지는 우수한 전기적 특성을 나타내었다. BST 박막의 전기적 특성은 기판온도에 따라 영향을 받고, seed-layer에 의해 향상됨을 알 수 있었다.

• 한국결정성장학회지
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• 제19권5호
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• pp.262-267
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• 2009

초발수 $TiO_2$ 박막을 습식 공정법에 의해 유리 기판 위에 성공적으로 제조하였다. Micro-nano 복합구조의 거친 표면을 갖는 박막을 제조하기 위하여 layer-by-layer(LBL) deposition 법과 liquid phase deposition(LPD) 법이 이용되었다. 초발수 박막은 LBL 법에 의해 texture 구조를 갖는(PAH/PAA) 박막을 제조 한 후 그 위에 LPD 법에 의해 $TiO_2$ 나노 입자를 적층시키고 그 표면을 fluoroalkyltrimethoxysilane(FAS)를 사용하여 발수 처리를 하여 제조하였다. $(PAH/PAA)_{10}$ 박막의 표면에 45분 동안 $TiO_2$를 적층한 박막은 RMS roughness가 65.6 nm로 거친 표면을 보여주었고 발수 처리 이후에 접촉각 $155^{\circ}$ 정도의 초발수 특성과 함께 파장 650 nm 이상에서는 80% 이상의 투과율을 보여주었다. 서로 다른 조건에서 제조된 박막의 표면 구조,광학적 특성, 접촉각을 FE-SEM, AFM, UV-Vis, contact angel meter를 이용하여 측정하였다.

• 한국세라믹학회지
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• 제30권6호
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• pp.510-516
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• 1993

$PbTiO_3$ thin films have been formed by rapid thermal annealing(RTA) of $TiO_2$/Pb/$TiO_2$ multilayer films deposited on Si wafers by RF sputtering. Based on the optimal depositon conditions of TiO2 and Pb, $TiO_2$/Pb/$TiO_2$ three layers were deposited for 900$\AA$ each. These films were subjected to RTA process at the temperatures ranging from $400^{\circ}C$ to $900^{\circ}C$ for 30 seconds in air, and were analyzed by X-ray diffraction and transmission electron microscopy to investigate the phases and the microstructures. As a result, perovskite $PbTiO_3$ phases was obtained above $500^{\circ}C$ with the trace of unreacted $TiO_2$. RBS analysis revealed the anisotropic behavior of diffusion that the diffusivity of Pb to the bottom $TiO_2$ layer was faster than that of Pb to the top $TiO_2$ layer. The amorphous Pb-silicate was formed between film and Si substrate due to the diffusion of Pb, but Pb-silicate existed locally at the interface and the amount of that phase was very small. Therefore the effect of bottom $TiO_2$ layer as a diffusion barrier was confirmed. $PbTiO_3$ films formed by current technique showed a relative dielectric constant of 60, and the maximum breakdown field reached 170kV/cm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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• pp.863-866
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• 1999

(Ba,Sr)$TiO_3$ thin films have attracted groat interest as new dielectric materials of capacitors for ultra-large-scale integrated dynamic random access memories (ULSI-DRAMs) such as 1 Gbit or 4 Gbit. In this study, inductively coupled $BCl_3/Cl_2$/Ar plasmas was used to etch (Ba,Sr)$TiO_3$ thin films. RF power/dc bias voltage = 600 W/-250 V and chamber pressure was 10 mTorr. The $Cl_2/(Cl_2+Ar)$ was fixed at 0.2, the (Ba,Sr)$TiO_3$ thin films were etched adding $BCl_3$. The highest (Ba,Sr)$TiO_3$ etch rate is 480$\AA/min$ at 10 % $BCl_3$ adding to $Cl_2$/Ar. The characteristics of the plasmas were estimated using optical emission spectroscopy (OES). The change of Cl, B radical density measured by OES as a function of $BCl_3$ percentage in $Cl_2$/Ar. The highest Cl radical density was shown at the addition of 10% $BCl_3$ to $Cl_2$/Ar. To study on the surface reaction of (Ba,Sr)$TiO_3$ thin films was investigated by XPS analysis. Ion enhancement etching is necessary to break Ba-O bond and to remove $BaCl_2$. There is a little chemical reaction between Sr and Cl, but Sr is removed by physical sputtering. There is a chemical reaction between Ti and Cl, and Tic14 is removed with ease. The cross-sectional of (Ba,Sr)$TiO_3$ thin film was investigated by scanning electron microscopy (SEM), the etch slope is about $65\;{\sim}\;70$.

• 한국전기전자재료학회논문지
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• 제14권12호
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• pp.1001-1007
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• 2001

In this study, high dielectric materials, (Pb,La)Ti $O_3$ thin films were fabricated by PLD (Pulsed Laser Deposition) method and investigated in terms of structural and electrical characteristics in order to develope the dielectric materials for the use of new capacitor layers of Giga bit-level DRAM. The deposition conditions were examined in order to fabricate uniform thin films through systematic changes of oxygen pressures and substrate temperature. The uniform thickness and smooth morphology of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were obtained at the conditions of substrate-target distance 5.5[cm], laser energy density 2.1[J/$\textrm{cm}^2$], oxygen pressure 200[mTorr] and substrate temperature 500[$^{\circ}C$]. After the (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films were fabricated under the above conditions, they were post-annealed by RTA process in order to increase the dielectric constant. The film thickness of 1200 [$\AA$] had dielectric constant 821. Assuming that operating voltage is 2V, leakage current density of (P $b_{0.72}$L $a_{0.28}$)Ti $O_3$ thin films would result into 10$^{-7}$ [A/$\textrm{cm}^2$] and satisfied the specification of 256M DRAM planar capacitor, 4$\times$10$^{-7}$ [A/$\textrm{cm}^2$]m}^2$]

• Transactions on Electrical and Electronic Materials
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• 제1권2호
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• pp.28-31
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• 2000

BaTiO$_3$cerameic thin films doped with Mn were manufactured by rf/dc magnetron sputter technique. We have investigated crystal structure, surface morphology and PRCR(positive-temperature coefficient of resistance) characteristics of the specimen depending on second heat-treatment temperature. Second heat treatment of the specimen were performed in the temperature range of 400 to 1350$\^{C}$ X-ray diffraction patterns of BaTiO$_3$ thin films show that the specimen heat treated below 600$\^{C}$ is an amorphous phase and the one heat treated above 1100$\^{C}$ forms a poly-crystallization . In this specimen heat-treated at 1300$\^{C}$, a lattice constant ratio(c/a) was 1.188. Scanning electron microscope(SEM) image of BaTiO$_3$ thin films of the specimen heat treated in between 900 and 1100$\^{C}$ shows a grain growth. At 1100$\^{C}$, the specimen stops grain-growing and becomes a poly-crystallization . A resistivity-temperature characteristics of the specimen depends on the doping concentrations of Mn. A resistivity ratio between the value at room temperature and the one above Curie temperature was 10$^4$ for pure BaTiO$_3$ thin films and 10$\^$5/ fo BaTiO$_3$ : additive 0.127mol% MnO

• 한국표면공학회지
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• 제52권4호
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• pp.211-226
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• 2019

Optical thin films were deposited by using a reactive pulsed DC magnetron sputtering method with a high density plasma(HDP). In this study, the effect of sputtering process conditions on the microstructure and optical properties of $SiO_2$, $TiO_2$, $Nb_2O_5$ thin films was clarified. These thin films had flat and dense microstructure, stable stoichiometric composition at the optimal conditions of low working pressure, high pulsed DC power and RF power(HDP). Also, the refractive index of the $SiO_2$ thin films was almost constant, but the refractive indices of $TiO_2$ and $Nb_2O_5$ thin films were changed depending on the microstructure of these films. Antireflection films of $Air/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/SiO_2/Nb_2O_5/Glass$ structure designed by Macleod program were manufactured by our developed sputtering system. Transmittance and reflectance of the manufactured multilayer films showed outstanding value with the level of 95% and 0.3%, respectively, and also had excellent durability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.11-12
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• 2005

[ $Pb(Zr_{0.48}Ti_{0.52})O_3$ ] (PZT) thin films were deposited on Pt(111)/Ti/$SiO_2$/Si substrates by pulsed laser deposition. In order to study the effect of different laser pulse repetition rate on the dielectric and ferroelectric properties of PZT thin films,2 Hz and 5 Hz of laser pulse repetition rate were selected. We compared the results of XRD pattern, dielectric constant and hysteresis characteristics. From the experimental data, we found that the electrical properties of PZT thin films which grown ar 2 Hz of laser pulse repetition rate were better than those which grown at 5 Hz of laser pulse repetition rate.