• Title/Summary/Keyword: TiN Layer

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Double layer $TiB_2$-TiN Films

  • LizhiChen;YunjieYang;ZhihongZheng;XiWang;XianghuaiLiu;Han, J.G.;Yoon, J.S.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1995.06a
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    • pp.141-141
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    • 1995
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Crack Face Friction Effects on Mode II Stress Intensities for a Surface-Cracked Coating In Two-Dimensional Rolling $Contact^{\copyright}$ (구름접촉 하중시 코팅 표면에 발생한 균열면의 마찰을 고려한 모드II 전파거동에 관한 연구)

  • Moon Byung-Young;Kim Byeong Soo
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.6 s.171
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    • pp.159-167
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    • 2005
  • This work focuses on the effects of crack free friction on Mode II stress intensity factors, $K_{II}$, for a vertical surface crack in a two-dimensional finite element model of TiN/steel subject to rolling contact. Results indicate that maximum $K_{II}$ values, which occur when the load is adjacent to the crack, may be significantly reduced in the presence of crack face friction. The reduction is more significant for thick coatings than for thin. Crack extension and increased layer thickness result in increased $K_{II}$ values. The effect of crack face friction on compressive $K_I$ values appears negligible. Comparative results are presented for $MoS_2/steel$ and diamond-like carbon(DLC)/Ti systems.

Characteristic of PECVD-$WN_x$ Thin Films Deposited on $Si_3N_4$ Substrate ($Si_3N_4$ 기판 위에 PECVD 법으로 형성한 Tungsten Nitride 박막의 특성)

  • Bae, Seong-Chan;Park, Byung-Nam;Son, Seung-Hyun;Lee, Jong-Hyun;Choi, Sie-Young
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.36D no.7
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    • pp.17-25
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    • 1999
  • Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

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Analysis of Electrical Properties of Ti/Pt/Au Schottky Contacts on (n)GaAs Formed by Electron Beam Deposition and RF Sputtering

  • Sehgal, B-K;Balakrishnan, V-R;R Gulati;Tewari, S-P
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.1
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    • pp.1-12
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    • 2003
  • This paper describes a study on the abnormal behavior of the electrical characteristics of the (n)GaAs/Ti/Pt/Au Schottky contacts prepared by the two techniques of electron beam deposition and rf sputtering and after an annealing treatment. The samples were characterized by I-V and C-V measurements carried out over the temperature range of 150 - 350 K both in the as prepared state and after a 300 C, 30 min. anneal step. The variation of ideality factor with forward bias, the variation of ideality factor and barrier height with temperature and the difference between the capacitance barrier and current barrier show the presence of a thin interfacial oxide layer along with barrier height inhomogenieties at the metal/semiconductor interface. This barrier height inhomogeneity model also explains the lower barrier height for the sputtered samples to be due to the presence of low barrier height patches produced because of high plasma energy. After the annealing step the contacts prepared by electron beam have the highest typical current barrier height of 0.85 eV and capacitance barrier height of 0.86 eV whereas those prepared by sputtering (at the highest power studied) have the lowest typical current barrier height of 0.67 eV and capacitance barrier height of 0.78 eV.

Comparison of stabilities in carbon nanotubes grown on a submicron-sized tip in terms of various buffer and catalyst materials (미세크기 팁 위에 성장된 탄소 나노튜브의 완충막 및 촉매 금속에 따른 안정성 비교)

  • Kim, Jong-Pil;Kim, Young-Kwang;Park, Chang-Kyun;Park, Jin-Seok
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1224-1225
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    • 2008
  • The results of the experiment that was conducted on the electron emission property and the long-term stability of the emission current in various carbon nanotubes (CNTs)-based field emitters with a CNT/catalyst/buffer/W-tip configuration are presented herein. CNT-based field emitters were fabricated by varying the (TiN, Al/Ni/TiN) buffer layer and the (Ni, Co) catalyst material. This study aimed to elucidate how the buffer layers and catalyst materials affect the structural properties of CNTs and the long-term stability of CNT emitters. Raman spectroscopy, field emission SEM, and high-resolution TEM were used to analyze the crystalline structure, surface morphologies, and nanostructures of all the grown CNTs. X-ray photoelectron spectroscopy (XPS) was used to monitor the chemical bonds of all the buffer layers and catalysts. Electron emission measurement and a long-term (up to 40h) stability test were carried out using a compactly designed field emission measurement system.

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Metal Organic Chemical Vapor Deposition Characteristics of Germanium Precursors (Metal Organic Chemical Vapor Deposition법을 이용한 Germanium 전구체의 증착 특성 연구)

  • Kim, Sun-Hee;Kim, Bong-June;Kim, Do-Heyoung;Lee, June-Key
    • Korean Journal of Materials Research
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    • v.18 no.6
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    • pp.302-306
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    • 2008
  • Polycrystalline germanium (Ge) thin films were grown by metal organic chemical vapor deposition (MOCVD) using tetra-allyl germanium [$Ge(allyl)_4$], and germane ($GeH_4$) as precursors. Ge thin films were grown on a $TiN(50nm)/SiO_2/Si$ substrate by varying the growth conditions of the reactive gas ($H_2$), temperature ($300-700^{\circ}C$) and pressure (1-760Torr). $H_2$ gas helps to remove carbon from Ge film for a $Ge(allyl)_4$ precursor but not for a $GeH_4$ precursor. $Ge(allyl)_4$ exhibits island growth (VW mode) characteristics under conditions of 760Torr at $400-700^{\circ}C$, whereas $GeH_4$ shows a layer growth pattern (FM mode) under conditions of 5Torr at $400-700^{\circ}C$. The activation energies of the two precursors under optimized deposition conditions were 13.4 KJ/mol and 31.0 KJ/mol, respectively.

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

  • Kim, Sungjun;Cho, Seongjae;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.147-152
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    • 2016
  • In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having $Ag/Si_3N_4/TiN$ and $Ag/Si_3N_4/p^+$ Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.

Epoxy/BaTiO3 (SrTiO3) composite films and pastes for high dielectric constant and low tolerance embedded capacitors fabrication in organic substrates

  • Paik Kyung-Wook;Hyun Jin-Gul;Lee Sangyong;Jang Kyung-Woon
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2005.09a
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    • pp.201-212
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    • 2005
  • [ $Epoxy/BaTiO_3$ ] composite embedded capacitor films (ECFs) were newly designed fur high dielectric constant and low tolerance (less than ${\pm}15\%$) embedded capacitor fabrication for organic substrates. In terms of material formulation, ECFs are composed of specially formulated epoxy resin and latent curing agent, and in terms of coating process, a comma roll coating method is used for uniform film thickness in large area. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ composite ECF is measured with MIM capacitor at 100 kHz using LCR meter. Dielectric constant of $BaTiO_3$ ECF is bigger than that of $SrTiO_3$ ECF, and it is due to difference of permittivity of $BaTiO_3\;and\;SrTiO_3$ particles. Dielectric constant of $BaTiO_3\;&\;SrTiO_3$ ECF in high frequency range $(0.5\~10GHz)$ is measured using cavity resonance method. In order to estimate dielectric constant, the reflection coefficient is measured with a network analyzer. Dielectric constant is calculated by observing the frequencies of the resonant cavity modes. About both powders, calculated dielectric constants in this frequency range are about 3/4 of the dielectric constants at 1 MHz. This difference is due to the decrease of the dielectric constant of epoxy matrix. For $BaTiO_3$ ECF, there is the dielectric relaxation at $5\~9GHz$. It is due to changing of polarization mode of $BaTiO_3$ powder. In the case of $SrTiO_3$ ECF, there is no relaxation up to 10GHz. Alternative material for embedded capacitor fabrication is $epoxy/BaTiO_3$ composite embedded capacitor paste (ECP). It uses similar materials formulation like ECF and a screen printing method for film coating. The screen printing method has the advantage of forming capacitor partially in desired part. But the screen printing makes surface irregularity during mask peel-off, Surface flatness is significantly improved by adding some additives and by applying pressure during curing. As a result, dielectric layer with improved thickness uniformity is successfully demonstrated. Using $epoxy/BaTiO_3$ composite ECP, dielectric constant of 63 and specific capacitance of 5.1nF/cm2 were achieved.

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Microstructure and dielectric properties with a contents Ca of (Sr.Ca)$TiO_3$-based grain boundary layer ceramics ((Sr.Ca)$TiO_3$계 입계층 세라믹의 Ca변화량에 따른 미세구조 및 유전특성)

  • 최운식;김충혁;이준웅
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.534-542
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    • 1994
  • Microstructures and dielectric properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.006Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramic were investigated. The specimens fired in a reducing atmosphere(N$_{2}$) were painted on the surface with CuO paste, and then annealed at 1100.deg. C for 2 hr. SEM and EDAX revealed that CuO penetrated rapidly into the bulk along the grain boundaries during the annealing. Grain size increased with increasing Ca content up to 15[mol%], but decreased with further addition. In the specimens with 10-15[mol%l of Ca, excellent dielectric properties were obtained as follows; dielectric constant <25000, dielectric loss(tan .delta[%]) <0.3[%] and capacitance change rate with temperature <.+-.[%], respectively. All the specimens in this study exhibited dielectric relaxation with frequency as a function of the temperature. The dispersive frequency was over 10$^{6}$ [Hz].z].

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A Study on the Eutectic Pb/Sn Solder Filip Chip Bump and Its Under Bump metallurgy(UBM)

  • Paik, Kyung-Wook
    • Journal of the Microelectronics and Packaging Society
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    • v.5 no.1
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    • pp.7-18
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    • 1998
  • In the flip chip interconnection on organic substrates using eutectic Pb/Sn solder bumps highly reliable Under Bump Metallurgy (UBM) is required to maintain adhesion and solder wettability. Various UBM systems such as 1$\mu$m Al/0.2$\mu$m Pd/1$\mu$m Cu, laid under eutectic Pb/Sn solder were investigated with regard to their interfacial reactions and adhesion proper-ties. The effects of numbers of solder reflow and aging time on the growth of intermetallic compounds (IMCs) and on the solder ball shear strength were investigated. Good ball shear strength was obtained with 1$\mu$m Al/0.2$\mu$m Ti/5$\mu$m Cu and 1$\mu$m Al/0.2$\mu$m ni/1$\mu$m Cu even after 4 solder reflows or 7 day aging at 15$0^{\circ}C$. In contrast 1$\mu$m Al/0.2$\mu$m Ti/1$\mu$m Cu and 1$\mu$mAl/0.2$\mu$m Pd/1$\mu$m 쳐 show poor ball shear strength. The decrease of the shear strength was mainly due to the direct contact between solder and nonwettable metal such as Ti and Al resulting in a delamination. In this case thin 1$\mu$m Cu and 0.2$\mu$m Pd diffusion barrier layer were completely consumed by Cu-Sn and pd-Sn reaction.