• Journal of the Korean institute of surface engineering
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• v.27 no.1
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• pp.36-44
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• 1994

The TiN films were deposited on the stainless substrates using arc vapor ion deposition process to in-vestigated the wear resistance. Pin-on-disc tests were performed to measure the volume wear loss of TiN films. The substrate bias voltages and nitrogen flow rates were selected as the deposition parameters of TiN films. It was found that the wear resistance of TiN films was enhanced with increasing bias voltages(0~-300 V) and nitrogen flow rates(220~380 SCCM). The volume wear loss TiN films were about 9.5~2.1$\times$$10^{-3}mm^3$ and 3.5~2.2$\times$$10^{-3}mm^3$ with bias voltages and nitrogen flow rates, respectively.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1188-1196
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• 1994

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.193-199
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• 2003

Ti-Cu-N and Ti-Ag-N nanocomposite films with various copper and silver contents were synthesized by arc ion plating and magnetron sputtering hybrid system. The structure and mechanical properties of these films were found to be dependant on the copper and silver concentration. The maximum hardness of Ti-Cu-N and Ti-Ag-N films showed approximately 40 ㎬ below 2 at%Me. The role of soft metallic phase in Ti-Me-N nanosturctured films containing one hard and one soft phase is also discussed.

• Korean Journal of Materials Research
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• v.28 no.7
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• pp.405-410
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• 2018

TiN and CrN thin films are among the most used coatings in machine and tool steels. TiN and CrN are deposited by arc ion plating(AIP) method. The AIP method inhibits the reaction by depositing a hard, protective coating on the material surface. In this study, the characteristics of multi-layer(TiN/CrN/TiN(TCT), CrN/TiN/CrN(CTC)) are investigated. For comparison, TiN with the same thickness as the multilayer is formed as a single layer and analyzed. Thin films formed as multilayers are well stacked. The characteristics of micro hardness and corrosion resistance are better than those of single layer TiN. The TiN/CrN peak is confirmed because both TCT and CTC are formed of the same component(TiN, CrN), and the phase is first grown in the (111) direction, which is the growth direction. However, the adhesion and abrasion resistance of the multilayer films are somewhat lower.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.7
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• pp.660-664
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• 2008

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness, chemical stability, low friction and good adhesion properties. In this study, we investigated the effect of DC power on the characteristics of TiN thin films deposited on Si and glass substrates by DC magnetron sputtering using TiN target. We made TiN films of 300 nm thickness with various DC powers. The structural properties of films are investigated by x-ray diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester. The rms roughness was measured by atomic forced microscopy (AFM). In the result, TiN films had the smooth surface and exhibited (111) directions with the increase of DC Power. Also, especially in case of 175 W DC power, TiN film exhibited the maximum hardness about 8 GPa, and the critical load near 25.

• Tribology and Lubricants
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• v.11 no.1
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• pp.37-43
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• 1995

Sputtering parameters such as N$_{2}$ flow percentage and bias voltage in reactive TiN film deposition by RF magnetron sputtering system were selected to investigate the effects of sputtering deposition conditions on tribological characteristics of TiN films. Wear scar of the steel ball damaged by TiN films was measured by SEM to understand wear behavior of deposited TiN films. Crystallization and induced strain of TiN were detected by XRD. Wear mode changed from plastic to brittle with increasing N$_{2}$ ratio. Wear scar by sliding with TiN film deposited at around 27% N$_{2}$ ratio was maximum. The results indicate that bias voltage affects tribological behavior by formation of high density film and internal stress.

• Journal of the Korean Society for Heat Treatment
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• v.4 no.2
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• pp.27-37
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• 1991

The adhesion strength of TiN films to substrate(STC 3) steel has been studied using the scratch adhesion test. Before deposition, the substrates were mechanically polished and TiN films were deposited at different substrate temperature($480^{\circ}C-540^{\circ}C$). The chemical properties of TiN films were investigated by RBS, and EDS, and the physical properties were investigated by micro-hardness tester, SEM, and X-ray diffractometer. According to results of this study, the adhesion strength of TiN films increase with increasing the deposition temperature. The roughness of the polished substrates surface were measured with a profilometer. It was observed that, as a general rule, the adhesion strength of deposited TiN films increase with decreasing the substrates surface roughness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.681-685
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• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.3
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• pp.199-205
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• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• Journal of the Korean institute of surface engineering
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• v.49 no.3
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• pp.307-315
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• 2016

The properties of AlTiN films by a cathodic arc deposition process have been studied. Oblique angle deposition has been applied to deposit AlTiN films. AlTiN films have been deposited on stainless steel (SUS304) and cemented carbide (WC) at a substrate temperature of $500^{\circ}C$. AlTiN films were analyzed by scanning electron microscopy, glow-discharge light spectroscopy, micro-vickers hardness, and nanoindenter. When applying a current of 50 A to the cathodic arc source, it showed that the density of macroparticle of AlTiN films was 5 lower than other deposition conditions. With the increase of the bias voltage applied to the substrate up to -150 V, the density of macroparticle was decreased. The change of the $N_2$ flow rate during coating process made no influence on the film properties. For the multi-layered films, the film prepared at oblique angle of $60^{\circ}$ showed the highest hardness of 28 GPa and $H^3/E^2$ index of 0.18. AlTiN films have been shown a good oxidation resistance up to $800^{\circ}C$.