• 대한의용생체공학회:학술대회논문집
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• 대한의용생체공학회 1994년도 추계학술대회
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• pp.175-177
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• 1994

The wear corrosion behaviour of a nitrogen ion implanted super stainless steel (S.S.S, 22Cr - 20Ni - 6Mo - 0.25N) was compared with those of S.S.S, 316L SS and TiN coated 316L SS. The Cr and Ni amounts won out from the materials were investigated using an electrothermal atomic absorption spectrometry. We observed that the Cr dissolution rate of the S.S.S was similar to that of 316L SS, however, the Ni release of the S.S.S was feater than 316L SS. The metal ions released from the nitrogen ion implanted S.S.S surface were significantly reduced. The wear corrosion behaviour of the stainless steels was not correlated with the results shown by a static metal ion release test.

• Journal of Korean Society for Atmospheric Environment
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• 제18권E1호
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• pp.29-36
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• 2002

The selective catalytic reduction (SCR) reaction of promoter catalysts was investigated in this study. A pure anatase type of TiO$_2$ was used as support. Activation measurement of prepared catalysts was practiced on a fixed reactor packing by the glass bead after filling up catalysts in 1/4 inch stainless tube. The reaction temperature was measured by K-type thermocouple and catalyst was heated by electric furnace. The standard compositions of the simulated flue gas mixture in this study were as follows: NO 1,780ppm, NH$_3$1,780ppm, $O_2$1% and $N_2$ as balance gas. In this study, gas analyzer was used to measure the outgassing gas. Catalyst bed was handled for 1hr at 45$0^{\circ}C$, and the reactivity of the various catalyst was determined in a wide temperature range. Conversion of NH$_3$/NO ratio and of $O_2$ concentration was practiced at 1,1.5 and 2, respectively. The respective space velocity were as follows . 10,000, 15,000 and 17,000 hr-1. It was found that the maximum conversion temperature range was in a 5$0^{\circ}C$. It was also found toi be very sensitive at space velocity, $O_2$ concentration, and NH$_3$/NO ratio. We also noticed that the maximum conversion temperature of (W, Mo, Sn) -V$_2$O$_{5}$/TiO$_2$ catalysts was broad. Specially WO$_3$-V$_2$O$_{5}$TiO$_2$2 catalyst appeared nearly 100% conversion at not only above 30$0^{\circ}C$ ut also below 25$0^{\circ}C$. At over 30$0^{\circ}C$, NH$_3$ oxidation decreased with decrease of surface excess oxygen. In addition, WO$_3$-V$_2$O$_{5}$TiO$_2$ catalyst did not appear to affect space velocity, $O_2$ concentration, and NH$_3$/NO ratio.ratio.

• Current Photovoltaic Research
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• 제7권1호
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• pp.9-14
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• 2019

Carrier selective solar cell structure has allured curiosity of photovoltaic researchers due to the use of wide band gap transition metal oxide (TMO). Distinctive p/n-type character, broad range of work functions (2 to 7 eV) and risk free fabrication of TMO has evolved new concept of heterojunction intrinsic thin layer (HIT) solar cell employing carrier selective layers such as $MoO_x$, $WO_x$, $V_2O_5$ and $TiO_2$ replacing the doped a-Si layers on either front side or back side. The p/n-doped hydrogenated amorphous silicon (a-Si:H) layers are deposited by Plasma-Enhanced Chemical Vapor Deposition (PECVD), which includes the flammable and toxic boron/phosphorous gas precursors. Due to this, carrier selective TMO is gaining popularity as analternative risk-free material in place of conventional a-Si:H. In this work hole selective materials such as $MoO_x$, $WO_x$ and $V_2O_5$has been investigated. Recently $MoO_x$, $WO_x$ & $V_2O_5$ hetero-structures showed conversion efficiency of 22.5%, 12.6% & 15.7% respectively at temperature below $200^{\circ}C$. In this work a concise review on few important aspects of the hole selective material solar cell such as historical developments, device structure, fabrication, factors effecting cell performance and dependency on temperature has been reported.

• 한국해양학회지:바다
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• 제4권3호
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• pp.198-207
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• 1999

시화호 내 5개 정점에서 채취한 주상시료들을 지화학적으로 분석하여 시화방조제 건설이후 퇴적환경 및 중금속오염에 대해 연구하였다. 시화호내 퇴적환경은 유기물의 C/N비와 C/S비에 의해 무산소환경, 산화환경, 그리고 두 환경이 공존하는 지역으로 세분되었다. 산화환원환경을 지배하는 요인은 수심과 퇴적물의 공급차인것으로 사료된다. 주상시료에서 분석된 지화학적 원소중 Mn-U-Mo간의 상관관계는 각 정점간의 산화 환원환경의 지시자로 사용이 가능하다. 주상시료들의 Al과 Ti 함량은 퇴적물특성에 의해 구분되며, 5개 중금속(Cr, Ni, Cu, Zn 및 Pb)함량은 중금속에 의한 오염정도를 지시한다. 중금속의 상대적 함량은 방조제에 가까운 시화호 중심부분에서 보다 안산-반월공단에 가까운 지역에서 높게 축적되어 있다. 특히 주상시료의 표층퇴적물은 시화호 중앙부보다 시화-반월공단쪽이 약 2-8배 정도로 중금속축적이 높다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1397-1399
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• 2002

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• 대한기계학회논문집A
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• 제24권10호
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• pp.2420-2427
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• 2000

In contacting between surface, there is wear and the generation of wear particles. The particles contained in the lubricating oil carry detailed and important information about the condition monitoring of the machine. Therefore, This paper was undertaken for Ferrography system of wear debris generated from lubricated moving machine surface. The lubricating wear test was performed under different experimental conditions using the Falex wear test of Pin and V-Block type by Ti(C,N) coated. It was shown from the test results that wear particle concentration(WPC) ; wear severity Index(IS) and size\distribution have come out all the higher value by increases sliding friction time. By the Ferrogram a thin leaf wear debris as well as ball and plate type wear particles was observed.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2000년도 추계학술대회
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• pp.42-42
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• 2000

반응소결 탄화규소는 소결체 내에 잔존 실리콘이 남아 있어 고온강도의 감소를 초래하는 단점이 있어 고온 구조재료로서의 사용이 제한되어 왔다. 따라서 이러한 문제점을 해결하기 위한 방법으로 Si 단독으로 용응침투시키는 대신 Si-MoSi₂를 침투시키는 방법이 시도되고 있으며, 이외에도 TiC 성형체에 Co, Ni 등의 금속, ZrB₂ 성형체에 Zr 금속 등을 용융, 침투시켜 성능향상을 유도하는 연구가 진행되고 있다. 본 연구에서는 반응소결에 대한 기본이론과 응용분야, 반응소결 비산화물계 세라믹스의 제조공정 및 이들 소결체의 미세구조와 기계적 특성 등을 소개하고자 한다.

• Applied Microscopy
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• 제36권spc1호
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• pp.47-56
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• 2006

Improvements are made to existing primitive cell volume measurement method to provide a real-time analysis capability for the phase analysis of nanocrystalline materials. Simplification is introduced in the primitive cell volume calculation leading to fast and reliable method for nano-phase identification and is applied to the phase analysis of Mo-Si-N nanocoating layer. In addition, comparison is made between real-time and film measurements for their accuracy of calculated primitive cell volume values and factors governing the accuracy of the method are determined. About 5% accuracy in primitive cell determination is obtained from camera length calibration and this technique is used to investigate the cell volume variation in WC-TiC core-shell microstructure. In addition to chemical compositional variation in core-shell type structure, primitive cell volume variation reveals additional information on lattice coherency strain across the interface.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2007년도 춘계학술대회
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• pp.193-198
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• 2007

The NiSi is very promising candidate for the metallization in 60nm CMOS process such as FUSI(fully silicided) gate and source/drain contact because it exhibits non-size dependent resistance, low silicon consumption and mid-gap workfunction. Ni film was first deposited by using ALD (atomic layer deposition) technique with Bis-Ni precursor and $H_2$ reactant gas at $220^{\circ}C$ with deposition rate of $1.25{\AA}/cycle$. The as-deposited Ni film exhibited a sheet resistance of $5{\Omega}/{\square}$. RTP (repaid thermal process) was then performed by varying temperature from $400^{\circ}C$ to $900^{\circ}C$ in $N_2$ ambient for the formation of NiSi. The process window temperature for the formation of low-resistance NiSi was estimated from $600^{\circ}C$ to $800^{\circ}C$ and from $700^{\circ}C$ to $800^{\circ}C$ with and without Ti capping layer. The respective sheet resistance of the films was changed to $2.5{\Omega}/{\square}$ and $3{\Omega}/{\square}$ after silicidation. This is because Ti capping layer increases reaction between Ni and Si and suppresses the oxidation and impurity incorporation into Ni film during silicidation process. The NiSi films were treated by additional thermal stress in a resistively heated furnace for test of thermal stability, showing that the film heat-treated at $800^{\circ}C$ was more stable than that at $700^{\circ}C$ due to better crystallinity.