Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Effects of bottom electrodes on the orientation of piezoelectric thin films and the frequency response of resonators in FBARs

체적 탄성파 공진기의 하부 전극이 압전 박막의 배향성 및 공진기의 압전 특성에 미치는 영향

  • Lee, Myung-Ho (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Jung, Jun-Phil (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Lee, Jin-Bock (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University) ;
  • Park, Jin-Seok (Dept. of Electronic Electrical Control and Instrumentation Engineering, Hanyang University)
  • 이명호 (한양대학교 전자전기제어계측공학과) ;
  • 정준필 (한양대학교 전자전기제어계측공학과) ;
  • 이진복 (한양대학교 전자전기제어계측공학과) ;
  • 박진석 (한양대학교 전자전기제어계측공학과)
  • Published : 2002.07.10
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Abstract

Effects of bottom electrode materials (Al, Cu, Ti, and Mo), included in film bulk acoustic resonators (FBARs), on the orientation of piezoelectric AlN thin films and the frequency response characteristic of resonators were investigated. The texture coefficient (TC) for (002) orientation, crystallite size, full width half maximum (FWHM), and surface roughness of deposited AlN films were measured for the various bottom electrodes. The return tosses estimated from the frequency responses of fabricated resonators were also compared. Experimental results showed that the difference of lattice constant and thermal expansion coefficient between the bottom electrode and the AlN film were the most important factors for achieving a high performance resonator.

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