• 한국기계가공학회지
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• 제10권5호
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• pp.44-50
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• 2011

The effect of deposition time in arc ion plating on surface properties of the TiN-coated SM45C steel is presented in this paper. The surface roughness, micro-particle, micro-hardness, coated thickness, atomic distribution of TiN, and adhesion strength are measured for various deposition times. It has been shown that the deposition time has a considerable effect on the micro-hardness, the coated thickness, and the atomic distribution of TiN of the SM45C steels but that it has little influence on the surface roughness and adhesion strength.

• 한국표면공학회지
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• 제29권1호
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• pp.3-14
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• 1996

High temperature anneal of W-rich silicides, inferior to adherence compared with Si-rich silicides, resulted in the film peeling off from the Si-substrate when WSix thickness reached more than critical thickness. Investigation of the W-rich silicide films peeling off from the substrate revealed that the voids underneath the $WSi_2$ produced through silicide reaction were responsible for the poor adherence of W-rich silicide. In addition, internal stress in the film increased as the silicide thickness increased. In order to promote the adhesion of WSix to Si-substrate, thin Ti-layer was formed between WSi and Si-substrate(WSix/Ti/Si). No voids were observed in $WSi_2$/Ti/Si $N_2$-annealed at $1000^{\circ}C$, thereby leading to an increase of the critical thickness from ～1700$\AA$ to more than 2500$\AA$. However, higher resisiti-vity was obtained in WSix/Ti/Si than in WSix/Si. Finally, different silicide reaction mechanism for the structures(WSix/Si, WSix/Ti/Si) was proposed to explain the formation of voids as well as the role of thin Ti-layer.

• 한국재료학회지
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• 제12권11호
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• 한국주조공학회지
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• 제28권6호
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• pp.282-287
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• 2008

The effect of CaO mold on the formation of reaction layer was investigated. CaO mold was prepared by mixing of Colloidal silica($NALCO^{(R)}$ 1130) and an $ZrO_2$, CaO at room temperature. The dried at $20{\pm}3^{\circ}C$, 75% humidity for 12hrs. Sample was prepared from the Cp-Ti(grade-2) and melted by high frequence induction melting system in the vacuum condition. The react ion layer of Ti was confirmed by optical microscopy, microhardness(Hv) and X-ray diffraction. Thickness of reaction layer using the CaO stabilized ZrO2 was thinner than the CaO added ZrO2. And thickness of reaction layer were decreased with decreasing pH of slurry. CaO addition in the slurry could not controlled reaction between molten Ti and investment mold. On the other hand, the CaO chemical bonded ZrO2 by stabilization treatment could controlled reaction between molten Ti and investment mold.

• Bulletin of the Korean Chemical Society
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• 제23권5호
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Journal of Welding and Joining
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• 제13권1호
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• pp.103-114
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• 1995

Plasma Transferred arc(PTA) hard facing process has been developed to obtain an overlay weld metal having excellent wear resistance. The effect of Ti, TiSi$_{2}$ and TiC powders addition on the surface of Aluminum alloy 5083 has been investigated with PTA process. This paper describes the result of test the performance of the overlay weld metal. The result can be summarized as follows 1. Intermetallic compound is formed on surface of base metal in Ti or TiSi$_{2}$ powder but the reaction with surface of base metal is little seen in TiC powder. 2. In formation of composite layer on aluminum alloy surface by plasma transferred arc welding process, high melting ceramics like TiC powder is excellent. 3. The multipass welding process is available for formation of high density of powder. But the more number of pass, the less effect of powder, it is considered, and limits of number of pass. 4. By increasing area fraction of TiC powder on Al alloy surface, in especially TiC powder the hardness increase more than 40% area fraction and 88% shows about Hv 700.

• Bulletin of the Korean Chemical Society
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• 제25권4호
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• pp.475-479
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• 2004

$TiO_2$ thin films were grown on Si (100) substrates by atomic layer deposition using $[Ti(OPr^i )_2(dmae)_2]$ and water as precursors. The thickness, chemical composition, crystalline structure, and morphology of the deposited films were investigated by transmission electron microscopy, UV spectrometry, X-ray photoelectron pectroscopy, X-ray diffraction, and atomic force microscopy. The results show that $TiO_2$ ALD using $[Ti(OPr^i )_2(dmae)_2]$ as a precursor is self-controlled at temperatures of 100-300$^{\circ}C$. At the growth temperatures below 300$^{\circ}C$, the surface morphology of the $TiO_2$ films is smooth and uniform. The $TiO_2$ film was grown with a preferred orientation toward the [101] direction at 400$^{\circ}C$.

• 소성∙가공
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• 제20권2호
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• pp.140-145
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• 2011

The aim of the present study is to derive optimized post heat treatment temperatures to get a proper formability for Ti/STS409L/Ti clad materials. These clad materials were fabricated by cold rolling followed by a post heat treatment process for 10 minutes at temperatures ranging from $500^{\circ}C$ to $850^{\circ}C$. The microstructure of the interface was observed using a Scanning Electron Microscope(SEM) and an Energy Dispersive X-ray Analyser(EDX) in order to investigate the effects of post heat treatment on the bonding properties of the Ti/STS409L/Ti clad materials. Diffusion bonding was observed at the interfaces with a diffusion layer thickness increasing with the post heat treatment temperature. The diffusion layer was composed of a type of(${\varepsilon}+{\zeta}$) intermetallic compound containing additional elements, namely, Fe, Ti and Ni. The micro Knoop hardness of the Ti/STS409L interfaces was found to increase with heat treatment up to $800^{\circ}C$ and then decrease for temperatures rising up to $850^{\circ}C$. The tensile strength was shown to decrease for heat treatment temperature increasing to $750^{\circ}C$ and then increase rapidly for temperature rising up to $850^{\circ}C$. A post heat treatment temperature range of $700{\sim}750^{\circ}C$ was found to optimize the formability of Ti/STS409L/Ti clad materials.

• Journal of Welding and Joining
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• 제14권4호
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• pp.99-108
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• 1996

The microstructure and bond strength are examined on the SiC/SiC and SiC/mild steel joints brazed by the Ag-Ti based alloys with different Ti contents. In the SiC/SiC brazed joints, the thickness of the reaction layers at the bond interface and the Ti particles in the brazing alloy matrices increase with Ti contents. When Ti is added up to 9 at% in the brazing alloy. $Ti_3SiC_2$ phase in addition to TiC and $Ti_5Si_3$ phase is newly created at the bond interface and TiAg phase is produced from peritectic reaction in the brazing alloy matrix. In the SiC/mild steel joints brazed with different Ti contents, the microstructure at the bond interface and in the brazing alloy matrix near SiC varies similarly to the case of SiC/SiC brazed joints. But, in the brazing alloy matrix near the mild steel, Fe-Ti intermetallic compounds are produced and increased with Ti contents. The bond strengths of the SiC/SiC and SiC/mild steel brazed joints are independent on Ti contents in the brazing alloy. There are no large differences of the bond strength between SiC/SiC and SiC/mild steel brazed joints. In the SiC/mild steel brazed joints, Fe dissolved from the mild steel does not affect on the bond strength of the joints. Thermal contraction of the mild steel has nearly no effects on the bond strength due to the wide brazing gap of specimens used in the four-point bend test. The brazed joints has the average bond strength of about 200 MPa independently on Ti contents, Fe dissolution and joint type. Fracture in four-point bend test initiates at the interface between SiC and TiC reaction layer and propagates through SiC bulk. The adhesive strength between SiC and TiC reaction layer seems to mainly control the bond strength of the brazed joints.

• 한국재료학회지
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• 제8권5호
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• pp.377-382
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• 1998

Ti[N ($C_{2}$$H_{5}$ $CH_{3}$)$_{2}$]$_{4}$ [tetrakis(ethylmethylammino)titanium.TEMAT]와 $NH_{3}$를 반응가스로 하여 각각 펄스(pulse) 형태로 시분할 주입되는 새로운 박막 증착방법(이하 Cycle-CVD라 함)을 이용하여 TiN박막이 $SiO_2$.기판위에 증착되었다.Cycle-CVD에서 반을로 내로 주입되는 반응가스와 Ar가스는 TEAM 펄스, Ar 펄스,$NH_{3}$펄스, Ar 펄스의 순서로 시분할주입되었고, 이렇게 차례대로 주입되는 4개의 펄스를 하나의 cycle로 규정하고, Cycle-CVD는 이러한 cycle이 연속하여 반복적으로 주입되도록 설계되었다. 기판온도가 $170^{\circ}C$-$210^{\circ}C$에서는 atomic layer deposition(ALD)특성을 보였고, $200^{\circ}C$에서 충분한 반응가스의 펄스시간 후에 cycle당 증착된 박막의 두께가 0.6nm/cycle로 포화되는 양상을 보여주었는데, 이는 cycle당 증착된 TiN 박막의 두께가 1.6 monolayer(ML)/cycle에 해당된다. 이와 같이 반등가스의 흡착을 이용ㅇ하여 TiN이 제한된 표면반응만에 의하여 ALD 기구에 의해 증착이 이루어지므로 TiN 박막의 두께는 단지 cycle 횟수만으로 정확하게 제어할 수 있었고, 우수한 step coverage 특성을 얻었다. 또한 반응가스간의 기상반응을 방지함으로써 입자의 발생을 억제할 수 있었고, 상대적으로 낮은 온도임에도 불구하고 4at% 이하의 낮은 탄소함량을 갖는 양호한 특성을 보여주었다.