• Journal of the Korean Ceramic Society
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• v.54 no.2
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• pp.141-149
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• 2017

The influence of the co-additive concentration (0 - 45 wt% with an interval of 5 wt%) of MgO-$TiO_2$ on the phase formation, microstructure and fracture toughness of MgO-$TiO_2$-reinforced dental porcelain nanocomposites derived from a one-step sintering technique were examined using a combination of X-ray diffraction, scanning electron microscopy and Vickers indentation. It was found that MgO-$TiO_2$-reinforced dental porcelain nanocomposites exhibited significantly higher fracture toughness values than those observed in single-additive (MgO or $TiO_2$)-reinforced dental porcelain composites at any given sintering temperature. The amount of MgO-$TiO_2$ as a co-additive was found to be one of the key factors controlling the phase formation, microstructure and fracture toughness of these nanocomposites. It is likely that 30 wt% of MgO-$TiO_2$ as a co-additive is the optimal amount for $MgTi_2O_5$ and $Mg_2SiO_4$ crystalline phase formation to obtain the maximum relative density (96.80%) and fracture toughness ($2.60{\pm}0.07MPa{\cdot}m^{1/2}$) at a sintering temperature of $1000^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.22-26
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• 2013

PTCR ceramics of $(Ba_{0.998}Sm_{0.002})TiO_3+0.001MnCO_3+xSiO_2$ (x=1, 2, 3, 4, 5, 6 mol%) were fabricated by solid state method. Disk samples of diameter 5 mm and thickness about 1mm were sintered at $1,290^{\circ}C$ for 2 h in reduced atmosphere of $5%H_2-95%N_2$ followed by re-oxidation at $600^{\circ}C$ for 30 min. in $20%O_2-80%N_2$.and their microstructures and electrical properties were investigated with SEM and Multimeter. The color of sintered samples was strongly dependent on $SiO_2$ content showing that the color of samples with $SiO_2$ of 1~2 mol% was gray but that of samples with $SiO_2$ of 4~6 mol% was changed from gray to blue, which seems to be related with the reduction of samples due to the oxygen vacancies created during the sintering in reduced atmosphere. $SiO_2$ content had a great influence on the microstructure and the electrical properties. With increasing $SiO_2$ content, the grain size of samples increased and the resistivity as well as the resistivity jump ($R_{285}/R_{min}$) decreased, which is considered to be attributed to the resistivity change at grain interior and grain boundary due to the fast mass transfer through $SiO_2$ liquide phase during the sintering. Samples with 2 mol% $SiO_2$ has the resistivity of $202{\Omega}cm$ and the resistivity jump of 3.28. It is expected that $SiO_2$ doped $BaTiO_3$ based PTC ceramics can be used for multilayered PTC thermistor due to the resistance to the sintering in reduced atmosphere.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2013-2015
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• 2005

In this paper, Effect of $BaSrTiO_3/Li_2CO_3$ on low temperature sintering and dielectric property of thick films has been investigated for variable capacitor on high frequency. The thick films were fabricated by the tape casting and then the structural and dielectric properties as a function of an addition composition ratio and sintering temperature were studied. For the thick film sintered at $1050^{\circ}C$, it was densified to 96% of $BaSrTiO_3$ theoretical density by the addition of 10 $wt{\cdot}%$ $BaSrTiO_3/Li_2CO_3$. Dielectric constant increased and Curie temperature lowered with the increased of $BaSrTiO_3/Li_2CO_3$ content, which probably can be explained by the substitution of $Ba^{3+},Li^{1+}$ on $RaTiO_3$ lattice. The tunability and dielectric loss of the $BaSrTiO_3/Li_2CO_3$ thick film, sintered at $1350^{\circ}C$, were about 26% and 0.234 at $10{\sim}15MHz$, respectively.

• Bulletin of the Korean Chemical Society
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• v.6 no.6
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• pp.344-347
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• 1985

Perovskite type oxides of $SrTiO_3,SrZrO_3,and\;SrTi_{1-x}Zr_xO_3$ have been systematically synthesized at $1250^{\circ}C$and $1550^{\circ}C$ with specimens containing additions of up to x=0.9 of zirconium by solid state reactions and characterized by X-ray diffraction. X-ray diffraction studies showed that the compound $SrTi_{1-x}Zr_xO_3$ has cubic structure. The lattice paramters of $SrTi_{1-x}Zr_xO_3$ solid solutions obey the Vegard's law and fairly large increase in volume can acompany the formation of this solution with increasing Zr content(X). Assuming the lattice constants of perovskite type compounds $A(B_{1-x}B'_x)O_3$where $B_{1-x}B'_x$ is $Ti_{1-x}Zr_x$, to be a linear function of the ionic radii of B and B' ions, the disordered ion pair of $Ti^{4+}$and $Zr^{4+}$ was verified from the lattice constants of a series compounds varying x=0,0.05, 0.25, 0.5, 0.75, 0.9, and 1.0 with known isovalent pairs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.336-336
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• 2008

A positive temperature coefficient of electrical resistivity (PTCR) was investigated in a ferroelectric lead-free perovskite-type compound $(Bi_{0.5}K_{0.5})TiO_3$ within $BaTiO_3$-based solid solution ceramics. The electrical properties and the microstructure of (1-x) $BaTiO_3$ - x $(Bi_{0.5}K_{0.5})TiO_3$ (BBKT) ceramics made using a conventional mixed and have been synthesized by an ordinary sintering technique. The Curie temperature was obviously increased with increasing of $(Bi_{0.5}K_{0.5})TiO_3$ content. The BKT ceramics (x=0.05) sintered at $1400^{\circ}C$ for 4h display low resistivity values of $10^1-10^2$ ohm cm at room temperature, PTCR effect(jump) of 1.05*$10^3$, and the Curie temperature of $T_c=141^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.11
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• pp.879-884
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• 2001

In this paper, the structural and dielectric properties of (Sr$_{l-x}$Ca$_{x}$)TiO$_3$ (0$\leq$x$\leq$0.2) -based grain boundary layer ceramics were investigated by XRD, SEM and HP4194A. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1420~152$0^{\circ}C$ and 4 hours, respectively. The average grain size and the lattice constant were decreased with increasing content of Ca. The average grain size was increased with increase of sintering temperature. The relative density of all specimens was 96~98%. The 2nd Phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan $\delta$<0.05, $\Delta$C<$\pm$10%. The appropriate Ca content was under 15 ㏖%.s under 15 ㏖%.%.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.995-1004
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• 1994

Phase relation and microwave dielectric properties of the system BaO.(Nd1-xSmx)2O3.TiO2 (n=4, 5) were studied. With n=5 (1 : 1 : 5), Ba2Ti9O20 and TiO2 formed in case of X$\leq$0.7, and Ba2Ti9O20 and Sm2Ti2O7 formed at X=1.0 as the second phases dispersed in fine-grained orthorhombic matrix phase. With n=4 (1 : 1 : 4). on the contrary, only fine grains of an ortho-rhombic phase were observed irrespective of Nd/Sm ratio. The compositions of these two stable orthorombic phases having distinct lattic constants even with the same Nd/Sm ratio were estimated as 4BaO.5(Nd1-xSmx)2O3.18TiO2 and BaO.(Nd1-xSmx)2O3.4TiO2 with n=5 and n=4 in the system BaO.(Nd1-xSmx)2O3.TiO2, respectively. Consequently the composition BaO.(Nd1-xSmx)2O3.5TiO2 lies in the compatible triangle of 4BaO.5(Nd1-xSmx)2O3.18TiO2 and the second phases mentioned above. The microwave dielectric properties (~4 GHz) of BaO.(Nd1-xSmx)2O3.5TiO2 can be controlled effectively by adjusting Sm content : with increasing X from 0 to 0.7, both dielectric constant and the temperature coefficient of resonant frequency decreased monotonically from 82 to 65 and from 91 (ppm/$^{\circ}C$) to -19(ppm/$^{\circ}C$), respectively, while unloaded Q(Qo) remained constant at about 2,600.

• Journal of Sensor Science and Technology
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• v.7 no.1
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• pp.51-60
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• 1998

La-modified $PbTiO_{3}$(PLT) thin plates were prepared for the fabrication of PLT pyroelectric IR sensors. The effects of the preparation parameters such as tile sintering temperature, the La content, and the ambient powder quantity, on the microstructural and dielectric properties of PLT thin plates were investigated by X-ray diffraction, scanning electron microscope, and measurements of relative density and dielectric properties. With an increased La content, the tetragonality c/a was decreased but the densification and the grain size were increased, which is considered to be due to the increased Pb vacancy concentration to maintain charge neutrality at the increased of La content. When the quantity of the ambient powder wvas increased, the tetragonality was slightly increased, which is believed io be due to the reduced evaporation of PbO. But the e(fect is insignificant compared to that of La content. The dielectric constant at room temperature was increased and the Curie temperature was decreased in accordance with the decreased tetragonality ratio c/a with the increase of La content. The dielectric constant and tan ${\delta}$ of $500{\mu}m$ thick PLT thin plate with 10 wt% excess PbO and 10 mol% La contant sintered at $1250^{\circ}C$ for 2 hours in ambient powder of $0.02\;g/cm^{3}$ were 360 and 0.02, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.6
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• pp.264-271
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• 2016

The effect of the oxygen content and the annealing temperature on the tensile behavior of the Ti-1.5Al-3Fe-0.25Si-(0.1~0.5)O alloy was investigated. The tensile properties were dependent on the volume fraction of the microstructure constituents, i.e. the equixed ${\alpha}$, equixed ${\beta}$ and lamellar ${\alpha}$. The results showed that the O-partitioned equixed ${\alpha}$ had a much higher strength compared to the equixed ${\beta}$. The strength of the lamellar ${\alpha}$ increased with increasing the annealing temperature because the O content of the lamellar ${\alpha}$ increased. Ti-1.5Al-3Fe-0.25Si-0.3O alloy annealed to $900^{\circ}C$ where the volume fraction of lamellar ${\alpha}$ was the highest exhibited an excellent combination of the strength (1198.5 MPa) and ductility (27.5%). The effect of the lamellar ${\alpha}$ on the ductility was discussed.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.217-221
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• 2002

In the coarse grain HAZ adjacent to the fusion line, most of the TiN particles in conventional Ti added steel are dissolved and austenite grain growth is easily occupied during welding process. To avoid this difficulty, thermal stability of TiN particle is improved by increasing the nitrogen content in steel. In this study, the effect of high nitrogen TiN particle on preventing austenite grain growth in HAZ was investigated. Increased thermal stability of TiN particle is helpful for preventing the austenite grain growth by pinning effect. High nitrogen TiN particle in simulated HAZ were not dissolved even at high temperature such as 1400 C and prevented the austenite grain growth in simulated HAZ. Owing to small austenite grain size in HAZ the width of coarse grain HAZ in high nitrogen TiN steel was decreased to 1/10 of conventional TiN steel. Even high heat input welding, the microstructure of coarse grain HAZ consisted of fine polygonal ferrite and pearlite and toughness of coarse grain HAZ was significantly improved.