• Journal of Electrical Engineering and Technology
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• v.13 no.4
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• pp.1638-1643
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• 2018

Multi-layer ceramic capacitors as decoupling capacitor were fabricated by dielectric composition with a high dielectric constant. The fabricated decoupling capacitors were embedded in the PCB of the 10G RF transceiver module and evaluated for the characteristics of electrical noise by the level of AC input voltage. In order to further improve the electrical properties of the $BaTiO_3$ based composite, glass frit, MgO, $Y_2O_3$, $Mn_3O$, $V_2O_5$, $BaCO_3$, $SiO_2$, and $Al_2O_3$ were used as additives. The electrical properties of the composites were determined by various amounts of additives and optimum sintering temperature. As a result of the optimized composite, it was possible to obtain a density of $5.77g/cm^3$, a dielectric constant of 1994, and an insulation resistance of $2.91{\times}10^{12}{\Omega}$ at an additive content of 5wt% and a sintering temperature of $1250^{\circ}C$. After forming a $2.5{\mu}m$ green sheet using the doctor blade method, a total of 77 layers were laminated and sintered at $1180^{\circ}C$. A decoupling capacitor with a size of $0.6mm(W){\times}0.3mm(L){\times}0.3mm(T)$ (width, length and thickness, respectively) and a capacitance of 100 nF was embedded using a PCB process for the 10G RF Transceiver modules. In the range of AC input voltage 400mmV @ 500kHz to 2200mV @ 900kHz, the embedded 10G RF Transceiver modules evaluated that it has better electrical performance than the non-embedded modules.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.4
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• pp.202-208
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• 2001

In Recent results suggested that doping $Ta_2O_5$ with a small amount of $TiO_2$ using standard ceramic processing techniques can increase the dielectric constant of $Ta_2O_5$ significantly. In this paper, this concept is studied using RTCVD (Rapid Thermal Chemical Vapor Deposition). Ti-doped $Ta_2O_5$ films are deposited using $TaC_{12}H_{30}O_5N$, $C_8H_{24}N_4Ti$, and $O_2$ on both Si and $NH_3$-nitrided Si substrates. An $NH_3$-based interface layer at the Si surface is used to prevent interfacial oxidation during the CVD process and post deposition annealing is performed in $H_2/O_2$ ambient to improve film quality and reduce leakage current. A sputtered TiN layer is used as a diffusion barrier between the Al gate electrode and the $TaTi_xO_y$ dielectric. XPS analyses confirm the formation of a ($Ta_2O_5)_{1-x}(TiO_2)_x$ composite oxide. A high quality $TaTi_xO_y$ gate stack with EOT (Equivalent Oxide Thickness) of $7{\AA}$ and leakage current $Jg=O.5A/textrm{cm}^2$ @ Vg=-1.0V has been achieved. We have also succeeded in forming a $TaTi_x/O_y$ composite oxide by rapid thermal oxidation of the as-deposited CVD TaTi films. The electrical properties and Jg-EOT characteristics of these composite oxides are remarkably similar to that of RTCVD $Ta_2O_5, suggesting that the dielectric constant of $Ta_2O_5$ is not affected by the addition of $TiO_2$.

• Journal of Korean Dental Science
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• v.10 no.1
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• pp.10-21
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• 2017

Purpose: The purpose of this study was to investigate the electrochemical characteristics of nanotubular Ti-25Nb-xZr ternary alloys for dental implant materials. Materials and Methods: Ti-25Nb-xZr alloys with different Zr contents (0, 3, 7, and 15 wt.%) were manufactured using commercially pure titanium (CP-Ti), niobium (Nb), and zirconium (Zr) (99.95 wt.% purity). The alloys were prepared by arc melting in argon (Ar) atmosphere. The Ti-25Nb-xZr alloys were homogenized in Ar atmosphere at $1,000^{\circ}C$ for 12 hours followed by quenching into ice water. The microstructure of the Ti-25Nb-xZr alloys was examined by a field emission scanning electron microscope. The phases in the alloys were identified by an X-ray diffractometer. The chemical composition of the nanotube-formed surfaces was determined by energy-dispersive X-ray spectroscopy. Self-organized $TiO_2$ was prepared by electrochemical oxidation of the samples in a $1.0M\;H_3PO_4+0.8wt.%$ NaF electrolyte. The anodization potential was 30 V and time was 1 hour by DC supplier. Surface wettability was evaluated for both the metallographically polished and nanotube-formed surfaces using a contact-angle goniometer. The corrosion properties of the specimens were investigated using a 0.9 wt.% aqueous solution of NaCl at $36^{\circ}C{\pm}5^{\circ}C$ using a potentiodynamic polarization test. Result: Needle-like structure of Ti-25Nb-xZr alloys was transform to equiaxed structure as Zr content increased. Nanotube formed on Ti-25Nb-xZr alloys show two sizes of nanotube structure. The diameters of the large tubes decreased and small tubes increased as Zr content increased. The lower contact angles for nanotube formed Ti-25NbxZr alloys surfaces showed compare to non-nanotube formed surface. The corrosion resistance of alloy increased as Zr content increased, and nanotube formed surface showed longer the passive regions compared to non-treatment surface. Conclusion: It is confirmed that corrosion resistance of alloy increased as Zr content increased, and nanotube formed surface has longer passive region compared to without treatment surface.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1502-1504
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• 2003

최근 전자기기의 경박단소화 추세는 전자기기의 크기와 가격의 감소를 이끌었으며 이러한 추세는 앞으로 지속될 것이다. 이와 같은 현상으로 전자기기를 구성하는 요소의 절반이상을 차지하는 단위수동소자의 경우 소형화를 넘어 박막화 및 집적화가 절실히 요구되는 실정이다. 따라서 본 연구에서는 현재 GHz 대역의 휴대용 무선통신 송 수신부 등에 사용되고 있는 기판이 $Al_2O_3$ 기판인 점을 고려하여 기판의 공통화를 위해 $Al_2O_3$ 기판 위에 Ta/$Ta_2O_5$/Ta 구조를 갖는 MIM 박막커패시터를 제작하여 그 특성을 고찰하였다. 모든 박막의 증착은 RF-magnetron reactive sputtering법에 의해 이루어졌으며, 유전체 열처리는 $700^{\circ}C$ 진공상태에서 60 sec 동안 수행하였다. XRD 분석결과, as-deposited $Ta_2O_5$ 박막은 열처리 후에 비정질상에서 결정질상으로 변환되었다. Ta/$Ta_2O_5$/Ta/Ti/$Al_2O_3$ 커패시터의 전기적 특성으로는 C-F, C-V, I-V 를 측정하였다.

• Korean Journal of Materials Research
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• v.17 no.2
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.538-540
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• 2009

The SBN thin films were deposited at substrate temperature of 300[$^{\circ}C$] on Pt-coated electrode (Pt/Ti/$SiO_2$/Si(100)) using RF sputtering method. The grain and crystallinity of SBN thin films were increased with the increase of annealing temperature. The dielectric constant(150) of SBN thin film was obtained by annealing temperature above 750[$^{\circ}C$]. The voltage dependence of dielectric loss showed a value within 0.01 in voltage ranges of -5~+5[V]. The capacitance characteristics showed a stable value of about 0.7[${\mu}F/cm^2$].

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.1
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• pp.28-37
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• 2010

In this paper, the IC (Integrated Circuit) for multi-channel asynchronous communication was designed by using FPGA and VHDL language. The existing chips for asynchronous communication that has been used commercially are composed of one to two channels. Therefore, when communication system with two channels or more is made, the cost becomes high and it becomes complicated for communication system to be realized and also has very little buffer, load that is placed into Microprocessor increases heavily in case of high speed communication or transmission of high-capacity data. The designed IC was improved the function and performance of communication system and reduced costs by designing 8 asynchronous communication channels with only one IC, and it has the size of transmitter/receiver buffer with 256 bytes respectively and consequently high speed communication became possible. To detect errors between communications, it was designed with digital filter and check-sum logic and channel MUX logic so that the malfunction can be prevented and errors can be detected more easily and input/output port regarding each communication channel can be used flexibly and consequently the reliability of system was improved. It was composed and simulated logic of VHDL described by using Cyclone II Series EP2C35F672C8 and QuartusII V8.1 of ALTERA company. In order to show the performance of designed IC, the test was conducted successfully in QuartusII simulation and experiment and the excellency was compared with TL16C550A of TI (Texas Instrument) company and ATmegal28 general-purpose micro controller of ATMEL company that are used widely as chips for asynchronous communication.

• Transactions on Electrical and Electronic Materials
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• v.6 no.3
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• pp.119-123
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• 2005

$0.10Pb(Sb_{1/2}Sn_{1/2})O_3-0.25PbTiO_3-0.65PbZrO_3$ specimens doped with $ MnO_2\;(0.18\;mol\%)$ and $Y_2O_3\;(0\~0.4\;wt\%)$ were fabricated by the mixed-oxide method. All specimens showed the typical XRD patterns of a perovskite polycrystalline structure and the lattice constant decreased with increasing amount of $Y_2O_3$. The relative dielectric constant and the dielectric loss of the specimens doped with $0.2\;wt\%\;Y_2O_3$ were 704 and 0.0201, respectively. The remanent polarization, the coercive field and the pyroelectric coefficient of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were $10.88\times10^{-2}Cm^{-2},\;11.12\times10^2kVm^{-1}$ and $5.03\times10^{-4}Cm^{-2}K^{-1}$ at $25^{\circ}C$, respectively. The figures of merit, $F_V$ for the voltage responsivity and $F_D$ for the specific detectivity, of the specimen doped with $0.2\;wt\%\;Y_2O_3$ were the good values of $3.04\times10^{-2}\;m^2C^{-1}\;and\;1.50\times10^{-5}\;Pa^{-1/2}$, respectively.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.33-39
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• 1998

The BST (Ba$_{1-x}$ Sr$_{x}$TiO$_{3}$)(50/50) thin film has been grown by RF magnetron reactive sputtering and its characteristics such as crystallization, surface roughness, and electrical properties have been investigated with varying the film thickness. The crystallization and surface roughness of BST thin film are investigated by using XRD and AFM, respectively The BST thin film anealed at 800.deg. C for 2 min has pure perovskite structure and good surface roughness of 16.1.angs.. We estimate that the thickness and dielectric constant of interface layer between BST film and electrode are 3nm and 18.9, respectively, by measuring the capacitance with various film thickness. As the film thickness increases form 80nm to 240nm, the dielectric constant at 10kHz increases from 199 to 265 and the leakage current density at 200kV/cm decreases from 0.682.mu.A/cm$^{2}$ to 0.181 .mu.A/cm$^{2}$. In the case of 240nm-thick BST thin film, the charge storage density and leakage current density at 5V are 50.5fC/.mu.m$^{2}$ and 0.182.mu.A/cm$^{2}$, respectively. The values indicate that the BST thin film is a very useful dielectric material for the DRAM capacitor.or.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.392-399
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• 1997

In this study, the effect of the sintering temperature on the dielectric and piezoelectric properties of 0.5 wt% $MnO_{2}$-doped $0.125Pb(Mg_{1/2}Nb_{2/3})O_{3}-0.435PbTiO_{3}-0.44PbZrO_{3}$ ceramics were investigated aiming at ultrasonic motor applications. From experimental result, it was found that the optimal sintering temperature condition was at $1270^{\circ}C$. The sample sintered at $1270^{\circ}C$ had density of $7.72\;g/cm^{3}$, dielectric constant of 570, dielectric loss of 0.82%, remanent polarization of $19.18{\mu}C/cm^{2}$, coercive field of 9.63 kV/cm, electromechanical coupling factor of radial mode of 55.1%, mechanical quality factor of 886. Temperature and frequency dependence of dielectric constant and dielectric loss of the sintered sample at $1270^{\circ}C$ was also investigated.