• 제목/요약/키워드: Ti-xFe-ySi

검색결과 88건 처리시간 0.036초

용융염법으로 합성한 Ba-ferrite 입자의 특성 (Properties of ba-ferrite Particles Synthesized by Molten Salt Method)

  • 오영우
    • 한국전기전자재료학회논문지
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    • 제13권6호
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    • pp.545-550
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    • 2000
  • In order to synthesize Ba-ferrite particles by molten salt method KCl and NaCl were added to basic composition to 50% by weight. X was varied from 0.0 to 1.0 to control the magnetic properties in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ and 1 mol% of $SiO_2$was added to control the aspect ratio of hexagonal platelets. And the effects of reaction temperatures were examined by varying the temperature from 85$0^{\circ}C$ to 120$0^{\circ}C$ with 5$0^{\circ}C$ intervals. Eutectic composition of NaCl and KCl lowered the crystallizing temperature of Ba-ferrite in molten salts than using KCl and NaCl separatly. The morphology of resulting Ba-ferrite particles was clearly hexagonal-shaped plates. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substitued with $Co^{2+}$ and $Ti^{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$/ $Co_{x}$ / $Ti_{x}$ / $O_{19}$ . Adding 1mol% $SiO_2$in molten salt method increased the size but shortened c-axis of the hexagonal ferrites and this result is an opposite phenomenon compared with the result in solid-statge reaction.n.ion.n.

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황산 환경에서 Fe-Si, Ni-Ti계 및 Ni 합금의 내부식성 특성 (Corrosion Characteristics of Fe-Si, Ni-Ti and Ni Alloy in Sulfuric Acid Environments)

  • 권혁철;김동진;김홍표;박지연;홍성덕
    • 한국재료학회지
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    • 제21권1호
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    • pp.1-7
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    • 2011
  • Methods of producing hydrogen include steam reforming, electrochemical decomposition of water, and the SI process. Among these methods, the Sulfur iodine process is one of the most promising processes for hydrogen production. The thermochemical sulfur-iodine (SI) process uses heat from a high-temperature-gas nuclear reactor to produce $H_2$ gas; this process is known for its production of clean energy as it does not emit $CO_2$ from water. But the SI-process takes place in an extremely corrosive environment for the materials. To endure SI environments, the materials for the SI environment will have to have strong corrosion resistance. This work studies the corrosion resistances of the Fe-Si, Ni-Ti and Ni Alloys, which are tested in SI-process environments. Among the SI-process environments, the conditions of boiling sulfuric acid and decomposed sulfuric acid are selected in this study. Before testing in boiling sulfuric acid environments, the specimens of Fe-4.5Si, Fe-6Si, Ni-4.5Si, Ni-Ti-Si-Nb and Ni-Ti-Si-Nb-B are previously given heat treatment at $1000^{\circ}C$ for 48 hrs. The reason for this heat treatment is that those specimens have a passive film on the surface. The specimens are immersed for 3~14 days in 98wt% boiling sulfuric acid. Corrosion rates are measured by using the weight change after immersion. The corrosion rates of the Fe-6Si and Ni-Ti-Si-Nb-B are found to decrease as the time passes. The corrosion rates of Fe-6si and Ni-Ti-Si-Nb-B are measured at 0.056 mm/yr and 0.16 mm/yr, respectively. Hastelloy-X, Alloy 617, Alloy 800H and Haynes 230 are tested in the decomposed sulfuric acid for one day. Alloy 800H was found to show the best corrosion resistance among the materials. The corrosion rate of Alloy 800H is measured at -0.35 mm/yr. In these results, the corrosion resistance of materials depends on the stability of the oxide film formed on the surface. After testing in boiling sulfuric acid and in decomposed sulfuric acid environments, the surfaces and compositions of specimens are analyzed by SEM and EDX.

스퍼터링법에 의한 강유전성 $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ 박막의 제조 및 전기적 특성에 관한 연구 (Preparation and Electrical Properties of the Ferroelectric $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ Thin Films by Sputtering Method)

  • 장영일;김장엽;임대순;김병호
    • 한국세라믹학회지
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    • 제35권3호
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    • pp.294-302
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    • 1998
  • $Pb_{1+x}$($Fe_{0.5}$$Nb_{0.5}$)$O_3$ films have been synthesized on Pt/Ti/$SiO_2$/Si substrates using rfmagnetron sputtering Concentration of Fe and Nb in the deposited films was adjusted to near stoichiometry through the control of target composition, Films deposited with adjusted to near stoichiometry showed better electrical properties such as dielectic and leakage characteristics. Crystallinity and dielectric constant increased with increasing excess PbO upto 9 mol% This study also showed that dielectric constant and leakage current characteristics improved by optimum content of $O_2$ flow during deposition.

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용융염법으로 합성한 Ba-ferrite의 $SiO_2$ 및 Seed 첨가 효과 (Effects of $SiO_2$ and Seed on Ba-ferrite Synthesized by Molten Salt)

  • 김영근;이승관;김현식;오영우
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.326-329
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    • 1996
  • In order to synthesize Ba-ferrite fine particles by molten salt method and inhibit the abnormal grain growth of sintered specimen, KCI anti NaCl were added to basic composition to 50% by weight, and added 1 male% of $SiO_2$ to control the shape of Ba-ferrite particles. $H_{c}$ and $M_{r}$ were decreased when F $e^{3+}$ was substituted with $Co_{2+}$ and $Ti_{4+}$ from x=0 to x=1.0 in $BaFe_{12-2x}$ $Ti_{x}$ $Co_{x}$ $O_{19}$ , and 1 mole% $SiO_2$ increased the size but shortened c-axis of hexagonal ferrite. Seeds added in Ba-ferrite particle effected inhibition of abnormal grain growth during sintering.ing.g.

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펄스레이져 증착법을 이용한 자기커패시터용 Pt/CoNiFe/$BaTiO_3$/CoNiFe 박막 제조 및 전.자기 특성 연구

  • 나여진;윤성욱;김철성;심인보
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.240.1-240.1
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    • 2011
  • 본 연구에서는 펄스레이져 박막 증착법(Pulsed Laser Deposition;PLD)을 이용하여 연자성의 CoNiFe (CNF) 물질과 강유전 특성의$BaTiO_3$ (BTO) 물질을 다층박막 구조로 제작하여 약자장(H=200 Oe)에 의해 에너지를 집적 시키거나 유전상수를 조절하여 박막의 구조 변화에 따른 커패시턴스 변화를 연구하였다. 다양한 구조의 다층 박막은 Si/$SiO_2$/Ti/Pt(111) 기판상에 PLD을 이용하여 증착하였으며, Phillp's X-선 회절기 (XRD)를 이용하여 결정구조와 격자 상수를 결정하였다. FE-SEM, TEM, AFM 및 EDS를 이용하여 박막 표면/단면의 미세구조 및 물질에 따른 조성비를 확인하였다. 자기적 특성을 위해Vibrating Sample Magnetometer (VSM)를 측정하였고, 전기적 특성은 LCR meter를 이용하여 측정하였다.

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$Nd_2O_3$ 함유 유리의 X-선조사에 따른 변색에 관한 연구 (A Study on the Coloration of the $Nd_2O_3$ Containing Glass by X-ray Irradiation)

  • 박용원;강원호
    • 한국세라믹학회지
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    • 제21권4호
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    • pp.373-381
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    • 1984
  • The coloration of the $Nd_2O_3$ contained $R_2O-BaO-SrO-ZrO_2-SiO_2$ glass added the various amount of $CeO_2$ $MnO_2$, $Fe_2O_3$ and $As_2O_3$ alone or together by the irradiation of X-ray irradiation,. The glasses added $CeO_2$ in proportion to amount were more effective on preventing coloration by X-ray irradiation but the addition of $MnO_2$ produced different color according to the amount of addition. The addition of the $Fe_2O_3$, $TiO_2$ and $As_2O_3$ did not give much effects to the transmission changes of $Nd_2O_3$ contained glass by X-ray irradiation but the glass added $CeO_2$ , $Fe_2O_3$, $TiO_2$ together was most effective to prevent coloration and transmisson changes.

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Electrical Properties of Metal-Ferroelectric-Insulator-Semiconductor Field-Effect Transistor Using an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si Structure

  • Jeon, Ho-Seung;Lee, Gwang-Geun;Kim, Joo-Nam;Park, Byung-Eun;Choi, Yun-Soo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.171-172
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    • 2007
  • We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.

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Planetary milling에 의한 $TiN_x$의 제조 (Fabrication of $TiN_x$ by planetary milling)

  • 김성진;김동식;라노;박성범;권원일;김문협;우흥식;안중호
    • 한국결정성장학회지
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    • 제15권3호
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    • pp.104-107
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    • 2005
  • Planetary milling법을 사용하여 Ti 분말과 $Si_3N_4$ bowl과의 반응을 유도하여 $TiN_x$을 제조하였으며, 이때 milling 시간은 1시간, 5시간, 10시간으로 조정하였다. 시편의 물성평가는 X선 회절분석을 통해 결정상의 변화를 분석한 결과 milling 시간이 5시간이 되면 비화학당량적 화합물인 $TiN_{0.26}$가 먼저 생성되고 10시간의 milling에서는 $TiN_{0.26}$과 TiN이 혼재되어 있는 것으로 확인되었다. 입도분석 및 FE-SEM으로 미세구조 분석을 한 결과, milling 시간이 증가함에 따라 Ti 입자사이즈가 감소하는 것으로 나타났으며, 10시간의 milling에서는 평균사이즈가 200nm의 $TiN_x$를 제조할 수 있었다.

울릉도 해안지역 화산암의 철 화합물에 관한 연구 (A Study on Iron Compounds of Volcanic Rock in the Seaside Area of Ulleung Island)

  • 윤인섭;김선배;김형상
    • 한국자기학회지
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    • 제20권3호
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    • pp.114-119
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    • 2010
  • 울릉도의 해안지역에서 채취한 화산암 시료에 대하여 X-선 회절분석 실험, X-선 형광 분광 분석 및 M$\ddot{o}$ssbauer 분광 분석으로 물리적 특성을 조사하여 화산암의 화학적 조성과 시료 내에 존재하는 Fe의 원자가 상태와 자기적 성질을 연구하였다. X-선 형광분광 분석의 결과로부터 울릉도 해안지역의 화산암은 지역에 따라 적철석인 hematite($\alpha-Fe_2O_3$)를 포함한 총 철 화합물의 양이 10.6 w%에서 14.5 w%인 전형적인 염기성암인 것을 알 수 있었다. M$\ddot{o}$ssbauer 분광 분석 결과로부터 울릉도 해안지역의 모든 시료에서 hematite에 의한 6중선의 공명 흡수선과 다양한 clay mineral에 포함된 $Fe^{3+}$에 의한 2중선의 공명흡수선이 나타나고 있으며, pyroxene($(Ca,Fe,Mg)_2(SiO_4)_2$)과 ilmenite($FeTiO_3$) 그리고 olivine($(Mg,Fe)_2SiO_4$) 들에 포함되어 있는 $Fe^{2+}$에 의한 2중선의 공명흡수선들도 나타나고 있음을 알 수 있었다. 또한 모든 시료들에서 철 화합물들이 주로 $Fe^{3+}$의 산화철 형태로 존재하므로 울릉도 해안지역의 염기성 화산암들은 육상형성 화산암임을 알 수 있다.

Chemical Solution Deposition 방법을 이용한 BiFeO3/Pb(Zr0.52Ti0.48)O3 다층박막의 전기적 특성에 대한 연구 (Ferroelectric, Leakage Current Properties of BiFeO3/Pb(Zr0.52Ti0.48)O3 Multilayer Thin Films Prepared by Chemical Solution Deposition)

  • 차정옥;안정선;이광배
    • 한국진공학회지
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    • 제19권1호
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    • pp.52-57
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    • 2010
  • $BiFeO_3(BFO)/Pb(Zr_{0.52}Ti_{0.48})O_3$(PZT) bilayer와 multilayer의 다층구조를 만들어 전기적 특성을 측정하여 같은 두께의 BFO 단층박막과 비교해 보았다. BFO와 PZT 용액을 이용하였으며 chemical solution deposition 방법으로 Pt/Ti/$SiO_2$/Si(100) 기판위에 각 박막을 증착하였다. X-ray diffraction 분석을 통해 모든 박막이 다배향(multi-orientation) 페로브스카이트 (perovskite) 구조를 가졌음을 확인하였다. BFO/PZT Bilayer와 multilayer 박막들은 BFO 단층박막의 비해 누설전류 값이 500 kV/cm에서 약 4, 5차수 정도 감소했으며, 이로 인해 BFO/PZT 다층박막의 강유전체 특성이 크게 향상되었다. BFO/PZT multilayer 다층구조 박막의 경우 안정된 이력곡선(hysteresis loop)을 나타냈으며, 잔류 분극(remanent polarization)의 값은 $44.3{\mu}C/cm^2$이었으며, 항전계($2E_c$) 값은 681.4 kV/cm였다.