• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.390-398
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• 1988

Effects of atmospheres and adidtives on the grain growth of TiO2 ceramics were investigated. In the range of 1300~140$0^{\circ}C$, grain growth was increased in CO2 as compared with O2 atmosphere and the grain boundary migration activation energy was lower than the diffusion activation energy of oxygen ion in TiO2. Also, in the case of addition of oxides, the grain growth was increased by oxides acting as a acceptor andinhibited by oxides acting as a donor. From the above results, when the oxygen vacancy concentration was increased, the intrinsic grain boundary mobility was increased and the pore drag force was decreased due to the rapid densification. Also it seems that the pore was migrated by the surface diffusion rather than lattice diffusion.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.169-169
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• 2000

최근 반도체 소자의 초고집적화 현상에 따라 기존의 Al-base 합금에 대한 한계에 달하면서 그에 대한 대체 물질로 Cu가 관심을 모으게 되었고 그럼으로써 Cu metallization을 위한 많은 연구가 진행되어 왔다. Cu는 Al-base 합금계보다 비저항이 낮고, 녹는점이 높으며, 또한 electromigration 특성이 뛰어난 것으로 알려져 있다. 공학적인 면에서 이미 이들 계에 대한 adhesion 및 전기적 특성에 대한 많은 연구가 있어왔지만, 이들 특성 변화에 대한 물리적 의미를 제공할 만한 기초 자료들이 부족한 상태이다. 본 연구에서는 부도체인 polyimide 박막과 diffusion barrier인 TiN 박막위에서의 Cu 박막성장에 따르는 interface chemical reaction의 변화를 XPS를 이용하여 관찰함으로서 이들 계에 있어서의 adhesion과의 관계를 조사하였다. 그리고 XPS를 이용한 modified surface accumulation method를 적용시켜 TiN diffusion barrier를 통한 Cu의 grain boundary diffusion 상수들을 측정하였다. Cu/TiN system의 경우에는 interface chemical reaction이 일어나지 않았지만 Cu/polymide system에 있어서는 boundary diffusivity는 특히 40$0^{\circ}C$에서 $650^{\circ}C$ 영역에서, Db=60$\times$10-11exp[-0.29/(kBT)]cm2/sec 이었다.

• Proceedings of the KWS Conference
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• 1996.10a
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• pp.56-57
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• 1996

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.682-688
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• 2016

In $TiO_2$-CuO systems, low-temperature sinterability was investigated by a conventional sintering method. Sintering temperatures were set at under $950^{\circ}C$, at which the volume diffusion is inactive. The temperatures are less than the melting point of Ag ($961^{\circ}C$), which is often used as an internal conductor in low-temperature co-fired ceramic technology. To optimize the amount of CuO dopant, various dopant contents were added. The optimum level for enhanced densification was 2 wt% CuO. Excess dopants were segregated to the grain boundaries. The segregated dopants supplied a high diffusion path, by which grain boundary diffusion improved. At lower temperatures in the solid state region, grain boundary diffusion was the principal mass transport mechanism for densification. The enhanced grain boundary diffusion, therefore, improved densification. In this regard, the results of this study prove that the sintering mechanism was the same as that of activated sintering.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.460-464
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• 2003

Ni and Ti films were deposited by the thermal evaporator, and then annealed in the N$_2$ ambient at 300-80$0^{\circ}C$ in a RTA(rapid thermal annealing) system. Four point probe, AEM, FESEM, AES, and XPS were used to study the effects of Ti-capping layers on the thermal stability of NiSi thin films. The Ti-capped NiSi was stable up to $700^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after $600^{\circ}C$. These results were due to that the Ni in-diffusion and Si out-diffusion were retarded by the capping layer, resulting in the suppression of the formation of NiSi$_2$and Si grains at the surface.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.53-57
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• 2019

Stability and activity of boron doped diamond (BDD) electrode are key factors for water treatment. In this study, BDD electrodes were prepared on various substrates such as Nb, Si, Ti, and $TiN_x/Ti$ by hot filament chemical vapor deposition (HFCVD) method. BDD/Ti film showed the delamination between BDD and Ti substrate due to the formation of TiC layer caused by diffusion of carbon. On the other hand, $BDD/TiN_x/Ti$ showed remarkably improved stability, compared to BDD/Ti. It was confirmed that $TiN_x$ intermediate layer act as barrier layer for diffusion of carbon. High potential window of 2.8 eV was maintained on the $BDD/TiN_x/Ti$ electrode and, better wastewater treatment capability and longer electrode working life than BDD/Nb, BDD/Si and BDD/Ti were obtained.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.307-314
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• 1998

PZT thin films were fabricated by the Sol-gel method. Starting materials used for the preparation of the stock solution were Pb-acetate trihydrate, Zr-normal propoxide and Ti-isopropoxide. 2-Methoxyethanol and iso-propanol were used for solution. For studying the diffusion of Pb ion into the substrates. We used bare Si substrate, $SiO_2/Si$ substrates which was produced by thermal oxidation and $TiO_2/SiO_2/Si$ which was mad by Sol-gel method. Densification and adhesion of thin films were observed by SEM. Phase formation of thin films and diffusion of Pb ion into the substrate were examined by XRD and ESCA, respectively. In the case of bare Si and $SiO_2/Si$ substrate, we obtained the perovskite phase at $700^{\circ}C$ and restricted a little the diffusion of Si ion into the film with $SiO_2$ buffer layer. In the case of $TiO_2/SiO_2/Si$, perovskite phase were obtained at $500^{\circ}C$ and the diffusion of Pb ion and Si ion were restriced.

• Journal of the Korean Society for Heat Treatment
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• v.29 no.2
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• pp.56-61
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• 2016

Heating experiments using the Ti-3Al-2.5V tube materials in a vacuum furnace have been performed to investigate a pertinent range of working temperatures and holding times for the development of the successive or simultaneous operation of superplastic hydroforming and diffusion bonding. The specimens were heated at $820^{\circ}C$, $870^{\circ}C$ and $920^{\circ}C$ respectively. Holding times at each temperature were varied up to 4 hours. Holding times longer than 1 hour were selected to consider the diffusion bonding process after or during the hydroforming process in the superplastic state. Grain sizes were varied from $5.7{\mu}m$ of the as-received tube to $9.2{\mu}m$ after heating at $870^{\circ}C/4hours$. Homogeneus granular microstructures could be maintained up to $870^{\circ}C$, while microstructures at $920^{\circ}C$ showed no more granular type.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.463-468
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• 2007

The interdiffusion characteristics of Cu-plug/Capping Layer/NiSi contacts were investigated. Capping layers were deposited on Ni/Si to form thermally-stable NiSi and then were utilized as diffusion barriers between Cu/NiSi contacts. Four different capping layers such as Ti, Ta, TiN, and TaN with varying thickness from 20 to 100 nm were employed. When Cu/NiSi contacts without barrier layers were furnace-annealed at $400^{\circ}C$ for 40 min., Cu diffused to the NiSi layer and formed $Cu_3Si$, and thus the NiSi layer was dissociated. But for Cu/Capping Layers/NiSi, the Cu diffusion was completely suppressed for all cases. But Ni was found to diffuse into the Cu layer to form the Cu-Ni(30at.%) solid solution, regardless of material and thickness of capping layers. The source of Ni was attributed to the unreacted Ni after the silicidation heat-treatment, and the excess Ni generated by the transformation of $Ni_2Si$ to NiSi during long furnace-annealing.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.696-700
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• 2002

The Ti-aluminide intermetallic compound was formed from high purity elemental Ti and Al foils by self-propagating, high-temperature synthesis(SHS) in hot press. formation of $TiAl_3$ at the interface between Ti and Al foils was controlled by temperature, pressure, heating rate, and so on. According to the thermal analysis, it is known in this study that the heating rate is the most important factor to form the intermetallic compound by this SHS reaction. The V layer addition between Al and Ti foils increased SHS reaction temperatures. The fully dense, well-boned inter-metallic composite($TiA1/Ti_3$Al) sheets of 700 m thickness were formed by heat treatment at $1000^{\circ}C$ for 10 hours after the SHS reaction of alternatively layered 10 Ti and 9 Al foils with the V coating layer. The phases and microstructures of intermetallic composite sheets were confirmed by EPMA and XRD.