• 대한치과보철학회지
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• 제44권6호
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• pp.740-750
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• 2006

Statement of problems. In an attempt to reduce screw loosening, dry lubricant coatings such as pure gold or tefron have been applied to the abutment screw. However, under repeated tightening and loosening procedures, low wear resistance and adhesion strength of coating material produced free particles on the surface of abutment screw and increased frictional resistance resulting in screw tightening problems. Purpose. The aim of this study was to compare friction coefficient, adhesion strength, vickers hardness and evaluate coating surface of titanium alloy specimens coated with TiN(titanium nitride), ZrN(zirconium nitride) and WC(tungsten carbide). Material and method. Titanium alloy(Ti-6Al-4V) discs of 12mm in diameter and 1mm in thickness divided into 4 groups. TiN, ZrN and WC was coated for the specimens of 3 groups respectively, and those of 1 group were not coated. Each group was made up of 4 specimens. In this study, sputtering method was used among the PVD(Physical Vapor Deposition) techniques available for TiN, ZrN and WC coatings. Friction coefficient, adhesion strength, vickers hardness and coating surface of 4 groups were measured. Results. 1. For all three coating conditions, friction coefficient was significantly decreased. Especially, ZrN coated surface showed the lowest value. $TiN(0.39{\pm}0.02)$, $ZrN(0.24{\pm}0.01)$, $WC(0.31{\pm}0.03)$. 2. TiN coating showed the highest adhesion strength, however ZrN coating had the lowest value. $TiN(25.3N{\pm}1.6)$, $ZrN(14.8N{\pm}0.6)$, $ WC(18.4N{\pm}0.7)$. 3. Vickers hardness of all three coatings was remarkably increased as compared with that of none coated specimen. TiN coating had the highest Vickers hardness, however WC coating showed the lowest value. $TiN(1865.2{\pm}33.8)$, $ZrN(1814.4{\pm}18.6)$, $WC(1008.5{\pm}35.9)$. 4. The ZrN or WC coated specimen showed a homogeneous and smooth surface, however the rough surface with defects was observed for TiN coating. Conclusions. When TiN, ZrN and WC coating applied to the abutment screw, frictional resistance would be reduced, as a result, the greater preload and prevention of the screw loosening could be expected.

• 한국표면공학회지
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• 제40권1호
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• pp.1-5
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• 2007

Quaternary TiZrAlN nanocomposite thin films were synthesized by Closed-Field Unbalanced Magnetron Sputtering (CFUBMS), and their microstructure and mechanical characteristics were examined. The grain refinement of the TiZrAlN nanocomposite thin films was controlled by adjusting the $N_2$ partial pressure. The hardness of the film varied with the $N_2$ partial pressure and the maximum value was obtained approximately 47 GPa. It was also confirmed that there is a critical value of the grain size($d_c$) to need maximum hardness.

• Transactions on Electrical and Electronic Materials
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• 제15권5호
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• pp.275-278
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• 2014

We deposited TiAgN and ZrAgN nanocomposite coatings on pure Titanium specimens, by using arc ion plating (AIP) with single alloy targets. TiAg ZrAg alloy targets of 5 wt.%, 10 wt.% silver content by vacuum arc remelting (VAR), followed by homogenization for 2 hours at $1,100^{\circ}C$ in non-active Ar gas atmosphere and characterized these samples for morphology and chemical composition. We investigated the biocompatibility of TiAg and ZrAg alloys by examining the proliferation of L929 fibroblast cells by MTT test assay, after culturing the cells ($4{\times}10^4cells/cm^2$) for 24 hours; and exploring the antibacterial properties of thin films by culturing Streptococus Mutans (KCTC3065), using paper disk techniques. Our results showed no cytotoxic effects in any of the specimens, but the antibacterial effects against Streptococus Mutans appeared only in the 10 wt.% silver content specimens.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 추계학술대회 논문집 전기물성,응용부문
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• pp.177-179
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• 2004

$Pb(Zr_{0.4},Ti_{0.6})O3$, $Pb(Zr_{0.6},Ti_{0.4})O_3$ powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method, and the structural and ferroelectric properties asafunting of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $100{\sim}120{\mu}m$. The relative dielectric constant and the dielectric loss of the PZT thick film sintered at $1050^{\circ}C$ were approximately 676 and 1.4%, respectively.

• 마이크로전자및패키징학회지
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• 제5권1호
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• pp.63-72
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• 1998

후막 PTC를 제조하기 위하여 BaTiO3 주원료에 Sb2O3와 MnO2를 첨가한 PTC 페이 스트를 ZrO2와 BaTiO3 기판위에 인쇄한후 13$25^{\circ}C$에서 1시간 동안 소결하였다. BaTiO3 기판 위에 형성된 PTC후막은 PTCR 특성을 나타내었다. 그러나 ZrO2기판위에 인쇄된 시편의 경 우 PTCR특성이 나타나지 않았다. 이것은 ZrO2기판과 인쇄된 PTC페이스트간의 열팽창계수 차이에 의한 thermal cracking 때문에 후막 PTC 형성이 불가능함을 보여주었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.142-145
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• 2004

[ $Pb(Zr_{0.8}Ti_{0.2})TiO_3$ ] powder were prepared by the sol-gel method using a solution of Pb-acetate, Zr n-propoxide and Ti iso-propoxide. PZT thick film were fabricated by the screen printing method. and then the structural properties as a function of the sintering temperature were studied. PZT film thickness, obtained by four screen printing, was approximately $70{\sim}90{\mu}m$. The PZT thick film, sintered at $1050^{\circ}C$, showed deuse and uniform grain stractures and percent porosity of the thick film was 25.43%.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3317-3322
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• 2011

This study examines the photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) when nanometer-sized Zr (0.1, 0.5, and 1.0 mol %)-$TiO_2$ prepared using a solvothermal method is utilized as the working electrode material. The particle sizes observe in the transmission electron microscopy (TEM) images are < 30 nm in all samples. The absorption band is slightly broadened at the tail for the 0.1 mol % Zr-$TiO_2$, and the intensity of the photoluminescence (PL) curves of the Zr-incorporated $TiO_2$ is significantly smaller than that of the pure $TiO_2$. Compared to that using pure $TiO_2$, the energy conversion efficiency is enhanced considerably by the application of Zr-$TiO_2$ in the DSSCs to approximately 6.17% for 0.5 mol % Zr-$TiO_2$ with the N719 dye (10.0 ${\mu}m$ film thickness and 5.0 mm ${\times}$ 5.0 mm cell area) under 100 mW/$cm^2$ of simulated sunlight.

• 한국표면공학회지
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• 제39권6호
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• pp.263-267
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• 2006

As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

• 멤브레인
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• 제34권2호
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• pp.146-153
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• 2024

본 실험에서는 Ti를 기반으로 한 평판 수소 분리막을 설계하여 제조하였다. 새로운 조성의 Ti를 베이스로 한 수소 분리막을 찾기 위하여 여러 합금들의 물리화학적 특성과 수소투과도 사이의 상관관계에 대해 조사하였다. 이를 바탕으로 신조성의 합금막 2종(Ti_14.2Zr_66.4Ni_12.6Cu_6.8 (70 ㎛), Ti_17.3Zr_62.7Ni₂₀ (80 ㎛))을 설계 및 제조하였다. 제조된 평판 수소 분리막은 300~500℃, 1~4 bar의 조건에서 혼합 가스(H₂, N₂), sweep 가스(Ar)를 이용하여 수소 투과 실험을 진행하였다. Ti_14.2Zr_66.4Ni_12.6Cu_6.8 합금막은 500℃, 4bar에서 최대 16.35 mL/cm² min의 flux를 가지며, Ti_17.3Zr_62.7Ni₂₀ 합금막은 450℃, 4 bar에서 최대 10.28 mL/cm² min의 flux를 가진다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.171-172
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• 2007

We fabricated the metal-ferroelectric-insulator-semiconductor filed-effect transistors (MFIS-FETs) using the $(Bi,La)_4Ti_3O_{12}\;and\;LaZrO_x$ thin films. The $LaZrO_x$ thin film had a equivalent oxide thickness (EOT) value of 8.7 nm. From the capacitance-voltage (C-V) measurements for an Au/$(Bi,La)_4Ti_3O_{12}/LaZrO_x$/Si MFIS capacitor, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.4 V for the bias voltage sweeping of ${\pm}9V$. From drain current-gate voltage $(I_D-V_G)$ characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) was about 1 V due to ferroelectric nature of BLT film. The drain current-drain voltage $(I_D-V_D)$ characteristics of the fabricated Fe-FETs showed typical n-channel FETs current-voltage characteristics.