• 제목/요약/키워드: Ti-Pd alloy

검색결과 33건 처리시간 0.027초

수종 임플랜트 금속의 내식성에 관한 전기화학적 연구 (AN ELECTROCHEMICAL STUDY ON THE CORROSION RESISTANCE OF THE VARIOUS IMPLANT METALS)

  • 전진영;김영수
    • 대한치과보철학회지
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    • 제31권3호
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    • pp.423-446
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    • 1993
  • Titanium and its alloys are finding increasing use in medical devices and dental implants. The strong selling point of titanium is its resistance to the highly corrosive body fluids in which an implant must survive. This corrosion resistance is due to a tenacious passive oxide or film which exists on the metal's surface and renders it passive. Potentiodynamic polarization measurement is one of the most commonly used electro-chemical methods that have been applied to measure corrosion rates. And the potentiodynamic polarization test supplies detailed information such as open circuit, rupture, and passivation potential. Furthermore, it indicates the passive range and sensitivity to pitting corrosion. This study was designed to compare the corrosion resistance of the commonly used dental implant materials such as CP Ti, Ti-6A1-4V, Co-Cr-Mo alloy, and 316L stainless steel. And the effects of galvanic couples between titanium and the dental alloys were assessed for their useful-ness-as. materials for superstructure. The working electrode is the specimen , the reference electrode is a saturated calomel electrode (SCE), and the counter electrode is made of carbon. In $N_2-saturated$ 0.9% NaCl solutions, the potential scanning was performed starting from -800mV (SCE) and the scan rate was 1 mV/sec. At least three different polarization measurements were carried out for each material on separate specimen. The galvanic corrosion measurements were conducted in the zero-shunt ammeter with an implant supraconstruction surface ratio of 1:1. The contact current density was recorded over a 24-hour period. The results were as follows : 1. In potential-time curve, all specimens became increasingly more noble after immersion in the test solution and reached between -70mV and 50mV (SCE) respectively after 12 hours. 2. The Ti and Ti alloy in the saline solution were most resistant to corrosion. They showed the typical passive behavior which was exhibited over the entire experimental range. Therefore no breakdown potentials were observed. 3. Comparing the rupture potentials, Ti and Ti alloy had the high(:st value (because their break-down potentials were not observed in this study potential range ) followed by Co-Cr-Mo alloy and stainless steel (316L). So , the corrosion resistance of titanium was cecellent, Co-Cr-Mo alloy slightly inferior and stainless steel (316L) much less. 4. The contact current density sinks faster than any other galvanic couple in the case of Ti/gold alloy. 5. Ag-Pd alloy coupled with Ti yielded high current density in the early stage. Furthermore, Ti became anodic. 6. Ti/Ni-Cr alloy showed a relatively high galvanic current and a tendency to increase.

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자기공명영상에서 프로토콜 변화를 이용한 금속인공물의 영상평가 (Evaluation of image quality for metal artifact using protocol parameters in the MRI)

  • 이수현;김도경;김요한;염혜정;이헌준;임주연;최우전;김동현
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2015년도 추계학술대회
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    • pp.582-585
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    • 2015
  • 고령화 사회로 인한 관절 질환 환자의 증가로 TKRA(Total Knee Replacement Arthroplasty)가 증가하고 있다. 이에 따라 TKRA에 사용되는 인공관절에 의해 MRI영상에서 금속인공물이 발생하게 되는데 이는 진단에 영향을 미치게 된다. 그러므로 본 논문에서는 Co-Cr, Ni-Ti 소재의 인공관절과 시퀀스 변화를 주어 영상에서의 영향을 최소화시켜 진단의 효과를 높이고자 한다. 1.5T AVANTO장비와 플라스틱 통, 각각의 인공관절(Normal, Co-Cr, Ni-Ti)을 사용하였으며 종이컵 안에 인공관절을 고정시킨 후 원통 모양의 플라스틱 통 안에 넣어 신호강도를 측정하였다. 균일하고 강한 신호강도를 획득하기 위하여 플라스틱 통은 물로 채웠다. 시퀀스는 T1 TSE, T2 TSE, PD TSE로 변화하면서 실험하였고 Axial영상을 획득하였다. 신호강도는 동일한 크기의 관심영역을 설정하여 최대값, 최소값을 제외한 후 평균을 구해 SNR, CNR을 측정하고 Image J를 이용해 PSNR을 측정하였다. 결과적으로 PD TSE가 T1 TSE, T2 TSE에 비하여 SNR과 CNR 값이 크게 나타나왔고 Co-Cr이 Ni-Ti에 비하여 PSNR의 수치도 크게 나타나고 Normal의 SNR 값과 유사하게 나타난 것으로 보아 PD TSE의 시퀀스와 Co-Cr의 합금을 사용하는 것이 진단 및 판독을 하는데 있어서 유용할 것으로 사료된다.

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n-InGaAs MOSFETs을 위한 Pd 중간층을 이용한 Ni-InGaAs의 열 안정성 개선 (Improvement of Thermal Stability of Ni-InGaAs Using Pd Interlayer for n-InGaAs MOSFETs)

  • 이맹;신건호;이정찬;오정우;이희덕
    • 한국전기전자재료학회논문지
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    • 제31권3호
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    • pp.141-145
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    • 2018
  • Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

도재소부용 18K 금합금의 미량원소의 첨가에 따른 물리적 성질의 변화에 관한 연구 (A Study on Change of Physical Property in Porcelain Fused to 18K Gold Alloy by Small Additional Elements)

  • 이기대
    • 대한치과기공학회지
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    • 제30권2호
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    • pp.31-37
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    • 2008
  • A variety of the porcelain fused to gold(PFG) have been developed to which porcelain can be fused. PFG alloys developed for this purposed have a high melting point and do not discolor when combined with porcelain. The design of the compositions of PFG is very important to esthetic restorative materials applying to porcelain. The purpose of this study is on the change of physical and mechanical characteristics in PFG 18K alloy by the small additional elements. Principal results are as follows. The high Au alloy containing 18Karat gold contents is respectively Au(75%), Pd(10%), Pt(4%), Ag(4%), In(2%), Sn(2%), Cu(2%), Ti(1%). These alloys are composed mainly of gold, platinum, silver and palladium with a few percent of the additional elements. By the addition of small amounts of elements such as In, Sn, Ti, the fine grain castings are produced in gold alloy and the small addition of platinum is very effective in increasing of hardness and strength. These gold alloys are representative of the changes to be expected as a result of heat treatment. These changes in strength and hardness values are sufficient to demonstrate a significant difference in performance between a as-casted and a heat-treated. These alloys have mechanical properties characteristics of Type and Type gold alloys. These alloys are useful to porcelain-metal restorations and dental laboratory. Also the porcelain fused to metal(PFM) alloys containing gold are commonly use for dental purposes in dental laboratory.

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결정질 실리콘 태양전지에 적용하기 위한 도금법으로 형성환 Ni/Cu 전극에 관한 연구 (Investigation of Ni/Cu Contact for Crystalline Silicon Solar Cells)

  • 김범호;최준영;이은주;이수홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2007년도 춘계학술대회
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    • pp.250-253
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    • 2007
  • An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electroless plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. The Ni contact was formed on the front grid pattern by electroless plating followed by anneal ing at $380{\sim}400^{\circ}C$ for $15{\sim}30$ min at $N_{2}$ gas to allow formation of a nickel-silicide in a tube furnace or a rapid thermal processing(RTP) chamber because nickel is transformed to NiSi at $380{\sim}400^{\circ}C$. The Ni plating solution is composed of a mixture of $NiCl_{2}$ as a main nickel source. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. The Ni/Cu contact was found to be well suited for high-efficiency solar cells and was successfully formed by using electroless plating and electroplating, which are more cost effective than vacuum evaporation. In this paper, we investigated low-cost Ni/Cu contact formation by electroless and electroplating for crystalline silicon solar cells.

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결정질 실리콘 태양전지에 적용될 도금전극 특성 연구 (Investigation of Plated Contact for Crystalline Silicon Solar Cells)

  • 김범호;최준영;이은주;이수홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.192-193
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    • 2007
  • An evaporated Ti/Pd/Ag contact system is most widely used to make high-efficiency silicon solar cells, however, the system is not cost effective due to expensive materials and vacuum techniques. Commercial solar cells with screen-printed contacts formed by using Ag paste suffer from a low fill factor and a high shading loss because of high contact resistance and low aspect ratio. Low-cost Ni and Cu metal contacts have been formed by using electro less plating and electroplating techniques to replace the Ti/Pd/Ag and screen-printed Ag contacts. Ni/Cu alloy is plated on a silicon substrate by electro-deposition of the alloy from an acetate electrolyte solution, and nickel-silicide formation at the interface between the silicon and the nickel enhances stability and reduces the contact resistance. It was, therefore, found that nickel-silicide was suitable for high-efficiency solar cell applications. Cu was electroplated on the Ni layer by using a light induced plating method. The Cu electroplating solution was made up of a commercially available acid sulfate bath and additives to reduce the stress of the copper layer. In this paper, we investigated low-cost Ni/Cu contact formation by electro less and electroplating for crystalline silicon solar cells.

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팔라듐 합금 복합막 제조를 위한 Intermediate Layer 연구 (A Study on Intermediate Layer for Palladium-Based Alloy Composite Membrane Fabrication)

  • 황용묵;김광제;소원욱;문상진;이관영
    • 공업화학
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    • 제17권5호
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    • pp.458-464
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    • 2006
  • 팔라듐 합금 복합막의 제조는 니켈 분말과 무기화합물의 혼합물로 개질된 튜브형 다공성 스테인레스 스틸 지지체 표면 위에 무전해 도금법(elctroless plating technique)에 의해 팔라듐 - 니켈 - 은을 박막으로 도금하는 형태로 이루어졌다. 일반적인 다공성 금속 지지체는 기공이 크기 때문에 그 자체로서 도금에 적합한 지지층이 되기가 어렵고, 결함이 없는 팔라듐 복합막의 제조가 쉽지 않아 본 연구에서는 금속 지지체와 팔라듐 사이에 중간층(intermediate layer)을 형성하여 이와 같은 문제점을 극복하고자 하였다. 중간층의 소재인 실리카 졸, 알루미나 졸, 이산화티타늄 졸 등의 무기화합물과 니켈 분말의 혼합물로 다공성 금속 지지체 위에 코팅하여 박막을 형성하고 제조 조건에 따른 질소 투과도를 측정하고 비교하였다. SEM 분석법에 의해 니켈과 무기화합물 혼합물의 표면층의 형성 모습도 측정하였다. 제조된 중간층 가운데 이산화티타늄 졸과 니켈의 혼합물이 가장 낮은 질소 투과도와 치밀한 표면층을 나타내었다. 최종적으로 니켈과 실리카의 혼합 중간층으로 이루어진 팔라듐-니켈-은 합금 복합막을 제조하고 수소와 질소의 투과도를 측정하였다. 1기압 이하에서 질소에 대한 수소 선택도는 무한대였으며 수소투과 속도는 1 기압, $500^{\circ}C$에서 $1.39{\times}10^{-2}mol/m^2{\cdot}s$의 값을 나타냈다.

Shallow S/D Junction에 적용 가능한 NiSi를 형성하기 위한 Ni-Pd 합금의 특성 연구 (The Study of Ni-Pd Alloy Characteristics to Form a NiSi for Shallow S/D Junction)

  • 이원재;오순영;아그츠바야르투야;윤장근;김용진;장잉잉;종준;김도우;차한섭;허상범;왕진석;이희덕
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2005년도 추계종합학술대회
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    • pp.603-606
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    • 2005
  • In this paper, the formation and thermal stability of Ni-silicide using Ni-Pd alloys is studied for ultra shallow S/D junction of nano-scale CMOSFETs. There are no different effects when Ni-Pd is used in single structure and TiN capping structure. But, in case of Cobalt interlayer structure, it was found that Pure Ni had lower sheet resistance than Ni-Pd, because of a thick silicide. Also, Ni-Pd has merits that surface of silicide and interface between silicide and silicon have a good morphology characteristics. As a result, Ni-Pd is an optimal candidate for shallow S/D junction when cobalt is used for thermal stability.

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저온소결용 (Ba, Sr)$TiO_3$-Glass계 세라믹스의 유전특성 (Dielectric properties of low temperature firing glass reacted (Ba, Sr)$TiO_3$$ ceramic capacitors)

  • 구자원;설용건;최승철
    • 한국재료학회지
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    • 제5권2호
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    • pp.151-156
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    • 1995
  • $(Ba, Sr)TiO_{3}$계에 저융점의 Glass물질을 첨가하여 저온소결이 가능하며, 고유전율을 갖는 유전체 재료를 제조하여, 그 특성을 조사하였다. 본 연구에서는 고유전율의 $(Ba, Sr)TiO_{3}$계에 PbO함량이 서로 다른 Glass물질을 첨가하여 조성변화에 따른 저온소결거동 및 유전특성을 조사하였으며, 적층형 세라믹 Capacitor(MLCC)에 응용하기 위하여 다양한 조성으로 제조하였다. $PbO-ZnO-B_{2}O_{2}$계 Glass 성분을 첨가하여 소결온도를 $1350^{\circ}C$에서 $1050^{\circ}C$까지 낮출수 있었으며, 4wt% glass 첨가로 $1150^{\circ}C$ 이하에서 2시간 소결한 저온소결용 재료는 실온에서 8000정도의 높은 비유전율과 0.005의 낮은 유전손실 그리고 광역온도범위에서 유전상수의 안정성을 가진 우수한 특성을 나타내며, 입자크기가 1~3 $\mu$m 정도로 치밀한 미세구조를 가지고 있다. 본 연구의 저온소결용 유전체 재료는 Z5U 규격을 만족시키고 기존의 $BaTiO_{3}$계 재료에 비해 낮은 소결온도를 가지므로 MLCC에 응용시 내부전극으로 Ag-Pd alloy 사용이 가능한 것으로 밝혀졌다.

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고효율 태양전지(I)-$N^+PP^+$ 전지의 제조 및 특성 (High Efficiency Solar Cell(I)-Fabrication and Characteristics of $N^+PP^+$ Cells)

  • 강진영;안병태
    • 대한전자공학회논문지
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    • 제18권3호
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    • pp.42-51
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    • 1981
  • 결정방위 (100)인 단결정 P형 실리콘 기판으로 N+PP+ 태양전지를 제작하였다. 뒷면의 P+층의 형성은 940℃에서 60분간 boron nitride를 사용하는 첫번째 boron predeposition과 boron glass를 제거하지 않고 1145℃에서 3시간 동안 행하는 두번째 predeposition으로 이루어지며 boron 확산층의 어닐링은 1100℃에서 40분간 하였다. 앞면의 N+ 층의 형성은 900℃에서 7∼15분동안 POCI3 source를 사용하는 Phosphorus Predeposition으로 이루어지며 어닐링은 800℃에서 1시간 동안 dryO2분위기로 하였다 금속전극층의 형성은 Ti, Pd, Ag의 순으로 앞, 뒷면에 이들 금속들을 질공증착한 후 사진식각을 함으로써 이루어지며 이에 다시 전기도금을 하여 전체 전극층의 두께를 3∼4μm정도로 증가시켰다. 표면 광반사를 줄이기 위해 앞면에 400℃에서 silicon nitride를 입혔으며 마지막으로 550℃에서 10분간 alloy를 함으로써 금속전극의 신뢰도를 높혔다. 그 결과 제작된 면적 3.36㎠의 N+PP+ 전지들은 100mW/㎠의 인공조명하에서 단락전류 103mA, 개방전압 0.59V ,충실도 0.8을 보였다. 따라서 실제 전면적(수광면적)효율이 14.4%(16.2%)가 되어 BSF가 없는 N+P 전지의 11%전면적 변환효율에서 약3.5%의 효율이 개선되었다.

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