• Resources Recycling
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• v.26 no.6
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• pp.3-9
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• 2017

In this study, plasma arc remelting behaviors according to arc current, arc voltage, and types of plasma gas were investigated using Kroll processed Ti sponges as anode. In the discharge pressure range of vacuum pump ($200{\sim}300kgf/cm^2$), the arc voltage did not vary greatly with the increase of discharge pressure at a given arc length. This means that the pressure in the vacuum chamber during operation hardly changes and the atmospheric pressure maintains. Under various conditions of arc currents (700~900A), the arc voltage slightly increased with arc current. The effects of anode materials and operational variables on the arc length-arc voltage relationship were compared with the results in previous studies. When the atmospheric gas changed from argon to helium, double effect of improvement on the output of the steady state was observed. The increase of output in the plasma arc device was accompanied by an increase in the melting rate of the Ti sponge and the quality of the ingot surface was also improved. The plasma arc remelting of the new scrap titanium and the old scrap zirconium alloy could result in the fabrication of an ingot with high surface quality.

• Korean Chemical Engineering Research
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• v.57 no.1
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• pp.11-16
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• 2019

$La_{0.6}Sr_{0.4}Ti_{0.3}Fe_{0.7}O_{3-{\delta}}$(LSTF) coated $Ba_{0.5}Sr_{0.5}Co_{0.8}Fe_{0.2}O_{3-{\delta}}$(BSCF) membranes which has properties of high oxygen permeability and stability to $CO_2$ were applied to a bench scale apparatus to conduct oxygen permeation experiments. Also, the membranes of the laboratory and the bench scale device were divided into three regions according to the temperature gradient in the membrane reactor for comparative analysis. While oxygen permeation experiment were conducted up to $900^{\circ}C$, temperature dependence of Cr deposition was investigated. As a result, it was confirmed that the oxygen permeability was $2.37ml/min{\cdot}cm^2$, which was significantly lower than $3.79ml/min{\cdot}cm^2$ measured in the laboratory apparatus. It was found through XRD and SEM/EDS analysis that the decrease in oxygen permeability was originated from the deposition of gaseous Cr on the membrane surface released from the alloy material of the housing. In particular, a large amount of Cr was found in the medium temperature region.

• Transactions of the Korean hydrogen and new energy society
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• v.16 no.3
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• pp.244-252
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• 2005

It is very interesting and important in the academic point of view and in practical use the hydrogen-induced phase separation(HIPS) which appears during hydrogen heat treatment. Since hydrogen can be removed very fast by pumping it out the hydrogen-induced new lattice phase which can not be obtained without hydrogen can be preserved as meta-stable state. In this study it has been investigated whether the HIPS appear in Pd-Al, Pd-Co, Pd-Cr, Pd-Ti, Pd-V and Pd-Zr alloys and discussed thermodynamic representation of the HIPS. The Pd alloys were arc-melted under argon atmosphere and remelted 4 or 5 times for homogenization. The alloys were annealed at 600$^{\circ}C$ under vacuum for 24 hrs and then subjected to pressure-composition isotherm measurements at 100$^{\circ}C$. The hydrogen heat treatment(HHT) of samples was carried out at 600$^{\circ}C$ under hydrogen pressure of 70 bar for 6 days and PC isotherms at 100$^{\circ}C$ were measured. By comparing the PC isotherms measured before and after HHT, occurrence of phase separation was determined. The experimental results showed that the HIPS appeared only in Pd-0.05Co alloy. For Pd-Co alloys with various composition the PC isotherms were measured. By adopting Park-Flanagan model for ternary thermodynamics the Gibbs free energy change for Pd-Co-H solid solution was calculated and subsequently with this the HIPS in Pd-Co alloy was explained fairly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.141-145
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• 2018

Ni-InGaAs shows promise as a self-aligned S/D (source/drain) alloy for n-InGaAs MOSFETs (metal-oxide-semiconductor field-effect transistors). However, limited thermal stability and instability of the microstructural morphology of Ni-InGaAs could limit the device performance. The in situ deposition of a Pd interlayer beneath the Ni layer was proposed as a strategy to improve the thermal stability of Ni-InGaAs. The Ni-InGaAs alloy layer prepared with the Pd interlayer showed better surface roughness and thermal stability after furnace annealing at $570^{\circ}C$ for 30 min, while the Ni-InGaAs without the Pd interlayer showed degradation above $500^{\circ}C$. The Pd/Ni/TiN structure offers a promising route to thermally immune Ni-InGaAs with applications in future n-InGaAs MOSFET technologies.

• Progress in Superconductivity
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• v.9 no.1
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• pp.85-90
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• 2007

Lanthanum aluminate($LaAlO_3$) film has been prepared on single crystal and metal substrates by dip coating method. Lanthanum acetate and aluminum were prepared via ligand exchange starting from lanthanum nitrate hexahydrate and aluminum nitrate hexahydrate in acetate glacial acetic acid solution after being refluxed. Coating solution was obtained by diluting the gel with methanol and 2-methoxyethanol to adjust the total cation concentration to 0.67 M. Precursor coated film was prepared by dip-coating with a speed of 25 mm/min on various substrates such as $LaAlO_3$ (001), MgO(001), $SrTiO_3$(001) single crystal, LMO/MgO/Ni-alloy. Thin films have been obtained by heat treating the precursor film at various temperatures from $600^{\circ}C{\sim}900^{\circ}C$ and various heating rate from $0.83^{\circ}C/min{\sim}1.25^{\circ}C/min$ under $Ar/O_2$ mixture containing 1000ppm oxygen. The films have been characterized by scanning electronic microscopy (SEM) and X-ray diffraction (XRD). XRD analysis for the prepared film showed that $LaAlO_3$ thin films with a preferred orientation of (100) plane parallel to substrate surface were obtained at $800^{\circ}C(1.11\;^{\circ}C/min)$ on LMO/MgO/Ni-alloy substrate, but the intensity decreased with the increase of heat treatment temperature.

• Korean Journal of Materials Research
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• v.29 no.12
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• pp.781-789
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• 2019

The prediction of Jominy hardness curves and the effect of alloying elements on the hardenability of boron steels (19 different steels) are investigated using multiple regression analysis. To evaluate the hardenability of boron steels, Jominy end quenching tests are performed. Regardless of the alloy type, lath martensite structure is observed at the quenching end, and ferrite and pearlite structures are detected in the core. Some bainite microstructure also appears in areas where hardness is sharply reduced. Through multiple regression analysis method, the average multiplying factor (regression coefficient) for each alloying element is derived. As a result, B is found to be 6308.6, C is 71.5, Si is 59.4, Mn is 25.5, Ti is 13.8, and Cr is 24.5. The valid concentration ranges of the main alloying elements are 19 ppm < B < 28 ppm, 0.17 < C < 0.27 wt%, 0.19 < Si < 0.30 wt%, 0.75 < Mn < 1.15 wt%, 0.15 < Cr < 0.82 wt%, and 3 < N < 7 ppm. It is possible to predict changes of hardenability and hardness curves based on the above method. In the validation results of the multiple regression analysis, it is confirmed that the measured hardness values are within the error range of the predicted curves, regardless of alloy type.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.2
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• pp.157-164
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• 1996

The AB5-type metal hydride electrodes using $(LM)Ni_{4.49}Co_{0.1}Mn_{0.205}Al_{0.205}$(LM : Lanthaniumrich Mischmetal) alloy powders(${\leq}200$mesh) which were coated with 25wt% copper in an acidic bath were prepared with or without addition of 10wt% PTFE as a binder. Prior to electrochemical measurements, the electrodes were sintered at $40^{\circ}C$ for 1 and 2hrs in vacuum with Mm(mischmetal) and sponge type Ti getters. The properties such as maximum capacity, cycle life and mechanical strength of the negative electrode have been investigated. The surface analysis of the electrode was also obtained before and after charge-discharge cycling using scanning electron microscope(SEM). From the observations of electrochemical behavior, it was found that the sintered electrode shows a lower maximum discharge capacity compared with non-sintered electrode but it shows a better cycle life. For the both electrodes with or without addition of PTFE binder, the values of mechanical strength were obtained, and their values increased with increasing sintering time. However, there is little difference of discharge capacity for both electrodes.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.10a
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• Design & Manufacturing
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• v.14 no.3
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• pp.44-49
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• 2020

One of display trends today is development of high pixel density. To get high PPI, a small size of pixel must be developed. RGB pixel is arranged by evaporation process which determines pixel size. Normally, a fine metal mask (FMM; Invar alloy) has been used for evaporation process and it has advantages such as good strength, and low thermal expansion coefficient at low temperature. A FMM has been manufactured by chemical etching which has limitation to controlling the pattern shape and size. One of alternative method for patterning FMM is laser micromachining. Femtosecond laser is normally considered to improve those disadvantages for laser micromachining process due to such short pulse duration. In this paper, a femtosecond laser drilling for thickness of 16 ㎛ FMM is examined. Additionally, we introduce experimental results for controlling taper angle of hole by vibration module adapted in laser system. We used Ti:Sapphire based femtosecond laser with attenuating optics, co-axial illumination, vision system, 3-axis linear stage and vibration module. By controlling vibration amplitude, entrance and exit diameters are controllable. Using vibrating objective lens, we can control taper angle when femtosecond laser hole drilling by moving focusing point. The larger amplitude of vibration we control, the smaller taper angle will be carried out.

• Korean Journal of Metals and Materials
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• v.48 no.12
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• pp.1047-1055
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• 2010

The objective of this study is to investigate the ballistic properties of Zr-based amorphous alloy surface composites fabricated by high-energy electron-beam irradiation. The mixture of Zr-based amorphous powders and $LiF+MgF_2$ flux powders was deposited on a pure Ti substrate, and then an electron beam irradiated this powder mixture to fabricate a one-layer surface composite. A four-layer surface composite, in which the composite layer thickness was larger than 3 mm, was also fabricated by irradiating the deposited powder mixture by an electron beam three times on the one-layer surface composite. The microstructural analysis results indicated that a small amount of fine crystalline particles were homogeneously distributed in the amorphous matrix of the surface composite layer. According to the ballistic impact test results, the surface composite layers effectively blocked a fast traveling projectile, while many cracks were formed at the composite layers, and thus the surface composite plates were not perforated. The surface composite layer containing ductile ${\beta}$ dendritic phases showed a better ballistic performance than the one without dendrites because dendritic phases hindered the propagation of shear bands or cracks.