• 한국전기전자재료학회논문지
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• 제31권4호
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• pp.226-230
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• 2018

Pure $BiFeO_3$ (BFO) and codoped $Bi_{0.9}A_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (A=Eu, Dy) thin films were prepared on Pt(111)/Ti/$SiO_2$/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the $Bi_{0.9}Eu_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BEFZO) and $Bi_{0.9}Dy_{0.1}Fe_{0.975}Zn_{0.025}O_{3-{\delta}}$ (BDFZO) thin films were about 36 and $26{\mu}C/cm^2$ at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and $1.21{\times}10^{-6}A/cm^2$, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.

• 전자공학회논문지D
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• 제34D권12호
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• pp.46-53
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• 1997

The TMA gas sensors are fabricated with the ZnO-based thin films grown by a RF magnetron sputtering method. The hall effect measurement and AES analysis are carried out to investigate the effects of the sputtering gases and dopants which effect on the electrical resistivity and sensitivity to TMA gas. We measure the cfhanges of the surface carrier concentration, haall electron mobility, electrical resistivity, surface condition, and depth profile of the films. The ZnO-based thin film sensors sputtered in oxygen, or added with dopants showed a high sruface carrier concentration, film sensors sputtered in oxygen and doped with 4.0 wt.% $Al_{2}$O$_{3}$, 1.0 wt.% TiO$_{2}$, and 0.2 wt% v$_{2}$O$_{5}$ showed the highest surface carrier concentration of 5.952 * 10$^{20}$ cm$^{-3}$ , hall electron mobility of 176.7 cm$^{2}$/V.s, lowest electrical resistivity of 6*10$^{-5}$ .ohm.cm and highest sensitivity of 12. These results were measured at a working temperature of 300.deg. C to 8 ppm TMA gas.

• 구강회복응용과학지
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• 제22권4호
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• pp.349-365
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• 2006

State of problem : A number of investigation about increase of surface area via various surface treatments and modification of surface constituent have been carried out. Purpose : The surface characteristics and stability of implants treated with anodic oxidation, fluoride ion incorporation, and groups treated with both methods were evaluated. Material and method : Specimens were divided into six groups, group 1 was the control group with machined surface implants, groups 2 and 3 were anodic oxidized implants (group 2 was treated with 1M $H_2SO_4$ and 185V, group 3 was treated with 0.25M $H_2SO_4$ and $H_3PO_4$ and 300V). Groups 4, 5 and 6 were treated with fluoride. Group 4 was machined implants treated with 0.1% HF, and groups 5 and 6 were groups 2 and 3 treated with 10% NaF respectively. Using variable methods, implant surface characteristics were observed, and the implant stability was evaluated on rabbit tibia at 0, 4, 8 and 12 weeks. Result : 1. In comparison of the surface characteristics of anodic oxidized groups, group 2 displayed delicate and uniform oxidation layer with small pore size containing Ti, C, O and showed mainly rutile, but group 3 displayed large pore size and irregular oxidation layer with many crators. 2. In comparison of the surface characteristics of fluoride treated groups 4, 5, 6 and non-fluoride treated groups 1, 2, 3, the configurations were similar but the fluoride treated groups displayed rougher surfaces and composition analysis revealed fluoride in groups 4, 5, 6. 3. The fluoride incorporated anodic oxidized groups showed the highest resonance frequency values and removal torque values, and the values decreased in the order of anodic oxidized groups, fluoride treated group, control group. 4. According to implant stability tests, group 2 and 3 showed significantly higher values than the control group (P<.05). The fluoride treated groups showed relatively higher values than the non fluoride treated groups and there were significant difference between group 4 and group 1 (P<.05). Conclusion : From the results above, it can be considered that the anodic oxidation method is an effective method to increase initial bone stability and osseointegration and fluoride containing implant surfaces enhance new bone formation. Implants containing both of these methods should increase osseointegration, and reduce the healing period.

• 한국공작기계학회논문집
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• 제15권3호
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• pp.127-131
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• 2006

Existing orthopedic implants such as pedicle screw and spinal cage were designed to fix the spinal structure. But, nowadays, physicians want to rehabilitate there original functions. To achieve this request, we studied micro-movable structure for interspinous. As a first step, we designed interspinous structure by 3D CAD to join each spinous processes. Next, we simulate it with various factors such as the thickness of micro-movement structure and the design of clip. At last, we performed static compressive test to satisfy the failure load of 339N and dynamic endurance test of 1.2M cycle. As a result, we developed interspinous implant and did several surgery to evaluated its satisfaction.

• 한국환경과학회지
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• 제12권1호
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• pp.47-54
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• 2003

This paper have examined the optimum combination of SNCR and SCR by varying SNCR injection temperature and NSR ratio along with SCR space velocity. NOx reduction experiments using a SNCR/SCR combined process have been conducted in simple NO/NH$_3$/O$_2$ gas mixtures. Total gas flow rate was kept constant 4 liter/min throughout the SNCR and SCR reactors, where initial NOx concentration was 500 ppm in the presence of 5% O$_2$. Commercial catalyst, sulfated V$_2$O$\_$5/-WO$_3$/TiO$_2$, was used for SCR NOx reduction. The residence time and space velocity were around 1.67 sec, 2,400 h$\^$-1/ and 6,000 h$\^$-1/ in the SNCR and SCR reactors, respectively. SNCR NOx reduction effectively occurred in a temperature window of 900-950$^{\circ}C$. About 88% NOx reduction was achieved with an optimum temperature of 950$^{\circ}C$ and NSR=1.5. SCR NOx reduction using commercial V$_2$O$\_$5/-WO$_3$-SO$_4$/TiO$_2$ catalyst occurred in a temperature window of 200-450$^{\circ}C$ 80-98% NOxreduction was possible with SV=2400 h$\^$-1/ and a molar ratio of 1.0-2.0. A SNCR/SCR(SV=6000 h$\^$-1/) combined process has shown same NOx reduction compared with a stand-alone SCR(SV=2400 h$\^$-1/) unit process of 98% NOx reduction. The NH$_3$-based chemical could routinely achieve SNCR/SCR combined process total NOx reductions of 98% with less than 5 ppm NH$_3$ slip at NSR ranging from about 1.5 to 2.0, SNCR temperature of 900$^{\circ}C$-950$^{\circ}C$, and SCR space velocity of 6000 h$\^$-1/. Particularly, more than 98% NOx reduction was possible using the combined process under the conditions of T$\_$SNCR/=950$^{\circ}C$, T$\_$SCR/=350$^{\circ}C$, 5% O$_2$, SV=6000 h$\^$-1/ and NH$_3$/NOx=1.5. A catalyst volume was about three times reduced by SNCR/SCR combined process compared with SCR process under the same controlled conditions.

• 한국전기전자재료학회논문지
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• 제31권6호
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• pp.403-407
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• 2018

In this study, double layer KTN/STO thin films were fabricated on $Pt/Ti/SiO_2/Si$ substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.42-43
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• 2002

반도체 디바이스의 발전은 높은 직접화 및 동작 속도를 추구하고 있으며, 이를 위해서 MOSFET의 scale down시 발생되는 문제를 해결해야만 한다. 특히, Channel이 짧아짐으로써 발생하는 device의 열화현상으로 동작전압의 조절이 어려워 짐을 해결해야만 하며, gate oxide 두께를 줄임으로써 억제할 수 있다고 알려져 왔다. 현재, gate oxide으로 사용되고 있는 SiO2박막은 비정질로써 ～8.7 eV의 높은 band gap과 Si기판 위에서 성장이 용이하며 안정하다는 장점이 있으나, 두께가 1.6 nm 이하로 얇아질 경우 전자의 direct Tunneling에 의한 leakage current 증가와 gate impurity인 Boron의 channel로의 확산, 그리고 poly Si gate의 depletion effect[1,2] 등의 문제점으로 더 이상 사용할 수 없게 된다. 2001년 ITRS에 의하면 ASIC제품의 경우 2004년부터 0.9～l.4 nm 이하의 EOT가 요구된다고 발표하였다. 따라서, gate oxide의 물리적인 두께를 증가시켜 전자의 Tunneling을 억제하는 동시에 유전막에 걸리는 capacitance를 크게 할 수 있다는 측면에서 high-k 재료를 적용하기 위한 연구가 진행되고 있다[3]. High-k 재료로 가능성 있는 절연체들로는 A1₂O₃, Y₂O₃, CeO₂, Ta₂O, TiO₂, HfO₂, ZrO₂,STO 그리고 BST등이 있으며, 이들 재료 중 gate oxide에 적용하기 위해 크게 두 가지 측면에서 고려해야 하는데, 첫째, Si과 열역학적으로 안정하여 후속 열처리 공정에서 계면층 형성을 배제하여야 하며 둘째, 일반적으로 high-k 재료들은 유전상수에 반비례하는 band gap을 갖는 것으로 알려줘 있는데 이 Barrier Height에 지수적으로 의존하는 leakage current때문에 절연체의 band gap이 낮아서는 안 된다는 점이다. 최근 20이상의 유전상수와 ～5 eV 이상의 Band Gap을 가지며 Si기판과 열역학적으로 안정한 ZrO₂[4], HfiO₂[5]가 관심을 끌고 있다. HfO₂은 ～30의 고유전상수, ～5.7 eV의 높은 band gap, 실리콘 기판과의 열역학적 안전성 그리고 poly-Si와 호환성등의 장점으로 최근 많이 연구가 진행되고 있다. 또한, Hf은 SiO₂를 환원시켜 HfO₂가 될 수 있으며, 다른 silicide와 다르게 Hf silicide는 쉽게 산화될 수 있는 점이 보고되고 있다.

• 자원환경지질
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• 제39권6호
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• pp.675-687
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• 2006

이 연구에서는 청풍지역 하상퇴적물에 대한 지구화학적 특성 규명을 통해, 주성분원소 및 미량원소에 대한 청풍지역의 자연배경치를 제시하고, 지구화학적 재해에 대해 예견하고자 한다. 이를 위해 물이 흐르고 있는 1차 수계를 대상으로 하상퇴적물시료를 채취하였고, 실험실에서 자연건조 시켰으며, 화학적 분석을 위해 알루미나 몰타르를 이용하여 200메쉬 이하로 분쇄하였다. 주성분원소 및 미량성분원소는 XRD, XRF, ICP-AES, NAA를 이용하여 분석하였다. 청풍지역 하상퇴적물의 기반암에 따른 지질집단별 지구화학적 특성 비교를 위해, 화강암질편마암지역, 메타텍틱편마암지역, 다도응회암지역, 유치역암 지역, 능주용암지역으로 분류하였다. 청풍지역 하상퇴적물 전체에 대한 주성분원소 함량은 $SiO_2\;47.31{\sim}72.81\;wt.%,\;Al_2O_3 \;11.26{\sim}21.88\;wt.%,\;Fe_2O_3\;2.83{\sim}8.39\;wt.%,\;CaO\;0.34{\sim}7.54\;wt.%,\;MgO\; 0.55{\sim}3.59\;wt.%,\;K_2O\;1.71{\sim}4.31\;wt.%,\;Na_2O\;0.56{\sim}2.28\;wt.%,\;TiO_2\;0.46{\sim}1.24\;wt.%,\;MnO\;0.04{\sim}0.27\;wt.%,\;P_2O_5\;0.02{\sim}0.45\;wt.%$이다. 청풍지역 하상퇴적물 전체에 대한 미량성분원소 및 희토류원소 함량은 $Ba\;700ppm{\sim}8990ppm,\;Be\;1.0{\sim}3.50ppm,\;Cu\;6.20{\sim}60ppm,\;Nb\;12{\sim}28ppm,\;Ni\;4.4{\sim}61ppm,\;Pb\;13{\sim}34ppm,\;Sr\;65{\sim}787ppm,\;V\;4{\sim}98ppm,\;Zr\;32{\sim}164ppm,\;Li\;21{\sim}827ppm,\;Co\;3.68{\sim}65ppm,\;Cr\;16.7{\sim}409ppm,\;Cs\;72{\sim}37.1ppm,\;Hf\;4.99{\sim}49.2ppm,\;Rb\;71.9{\sim}649ppm,\;Sb\;0.16{\sim}5.03ppm,\;Sc\;4.97{\sim}5ppm,\;Zn\;26.3{\sim}375ppm,\;Ce\;60.6{\sim}373ppm,\;Eu\;0.82{\sim}6ppm,\;Yb\;0.71{\sim}10ppm$의 범위를 보였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 추계학술대회논문집A
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• pp.304-309
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• 2000

Strain gage method is used to evaluate the mode I dynamic stress intensity factor of marging steel(18Ni) and titanium alloy(Ti-6A1-4V). To decide the best strain gage position on specimen, static fracture toughness test was performed. Then instrumented charpy impact test and dynamic tensile test was performed by using strain gage method for evlauating dynamic stress intensity factor. Strain gage signals on the crack tip region are used to calculate the stress intensity factors. It is found that strain gage method is more useful than method by using load which is obtained from impact tup to assess dynamic characteristics such as dynamic stress intensity factor.

• 한국진공학회지
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• 제7권s1호
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• pp.30-36
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• 1998

The plasma-spray technique is currently the most frequently used method to produce calcium phosphate coatings. Hydroxyapatite(HAp), one form of calcium phosphate, is preferred by its ability to form a direct bond with living bone, resulting in improvements of implant fixation and faster bone healing. Recently, concerns have been raised regarding the viable use and long-term stability of plasma-spray HAp coatings due to its nature of comparatively thick, porous, and poor bonding strength to metal implants. Thin layers (maximum of few microns) of calcium phosphate were formed by an e-beam evaporation with and without ion bombardments. The Ca/P ration of film was controlled by either using the evaporants having the different ration of Ca/P with addition of CaO, or adjusting the ion beam assist current. The Ca/P ration had great effects on the structure formation after heat treatment and the dissolution bahavior. The calcium phosphate films produced by IBAD exhibited high adhesion strength.