• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.375-384
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• 2004

Switching phenomenon of a three-waveguide optical coupler was analyzed by using the coupled mode theory, and the coupling-length of the device was calculated by means of the FDM. CPW traveling-wave electrodes were designed by the CMM and SOR simulation techniques so as to satisfy the conditions of phase-velocity and impedance matching. Traveling-wave modulators were fabricated on a z-cut LiNbO$_3$ substrate. Ti was in-diffused in LiNbO$_3$ to make waveguides and Au electrodes were built on the waveguides by the electroplating technique. Insertion loss and switching voltage of the optical modulator were about 4 ㏈ and 15.6V. Network analyzer was used to obtain S parameters and corresponding RF response. From the measurement, parameters of the traveling-wave electrodes were extracted as such Z$_{c}$=39.2 $\Omega$, Neff=2.48, and a0=0.0665/cm((GHz) (1/2)). The measured optical response R(w) was compared with the theoretically estimated and both responses were shown to agree well. The measurement results revealed that the ㏈ bandwidth turned out to be about 13 GHz.

• Composites Research
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• v.16 no.3
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• pp.1-8
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• 2003

Densification occurs by the inelastic flow of the matrix materials during the consolidation processes at high temperature for MMCs, and the results depend on many process conditions such as applied pressure, temperature and volume fraction of fiber and matrix materials. This is particularly important in titanium matrix composites since material failure may occur by either the applied conditions or microstructural parameters through the processes, and thus a generic model based on micro-mechanical approaches enabling the evolution of density over time to be predicted has been developed. The mode developed is then implemented into FEM so that practical process simulation has been carried out. Further the experimental investigation of the consolidation behavior of SiC/Ti-6Al-4V composites using vacuum hot pressing has been performed, and the results obtained are compared with the model predictions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.929-935
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• 2010

$(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.01{\leq}x{\leq}0.10$) ceramics were fabricated with muffled sintering by a modified synthesis process. Their positive temperature coefficient of resistivity (PTCR) characteristics were investigated systematically. All specimen showed a perovskite structure with a tetragonal symmetry. Both the lattice parameter of a and c axes were slightly decreased with increasing $(Bi_{0.5}Na_{0.5})TiO_3$ (BNT) content. Grain growth was achieved when the incorporated BNT was increased to 6 mol% and the inhibition of grain growth is considered to be due to the appearance of Ba vacancy ($V^{"}_{Ba}$) in the $(1-x)BaTiO_3-x(Bi_{0.5}Na_{0.5})TiO_3$ ($0.08{\leq}x$). With 4 mol% BNT addition, room temperature resistivity decreased to $48 \Omega{\cdot}cm$ and a resistivity jump ($\rho_{max}/\rho_{min}$) was as high as $1.1{\times}10^4$, respectively. Curie temperature was also increased to $171^{\circ}C$ with increasing BNT content.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.823-829
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• 2004

In this paper, non-self-aligned SiGe HBTs with ${f}_\tau$ and${f}_max $above 50 GHz have been fabricated using an RPCVD(Reduced Pressure Chemical Vapor Deposition) system for wireless applications. In the proposed structure, in-situ boron doped selective epitaxial growth(BDSEG) and TiSi$_2$ were used for the base electrode to reduce base resistance and in-situ phosphorus doped polysilicon was used for the emitter electrode to reduce emitter resistance. SiGe base profiles and collector design methodology to increase ${f}_\tau$ and${f}_max $ are discussed in detail. Two SiGe HBTs with the collector-emitter breakdown voltages ${BV}_CEO$ of 3 V and 6 V were fabricated using SIC(selective ion-implanted collector) implantation. Fabricated SiGe HBTs have a current gain of 265 ∼ 285 and Early voltage of 102 ∼ 120 V, respectively. For the $1\times{8}_\mu{m}^2$ emitter, a SiGe HBT with ${BV}_CEO$= 6 V shows a cut-off frequency, ${f}_\tau$of 24.3 GHz and a maximum oscillation frequency, ${f}_max $of 47.6 GHz at $I_c$of 3.7 mA and$V_CE$ of 4 V. A SiGe HBT with ${BV}_CEO$ = 3 V shows ${f}_\tau$of 50.8 GHz and ${f}_max $ of 52.2 GHz at $I_c$ of 14.7 mA and $V_CE$ of 2 V.

• Biotechnology and Bioprocess Engineering:BBE
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• v.10 no.3
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• pp.284-288
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• 2005

Baker's yeast was disrupted in a 1.4-L stainless steel horizontal bead mill under a continuous recycle mode using 0.3 mm diameter zirconia beads as abrasive. A single pass in continuous mode bead mill operation liberates half of the maximally released protein. The maximum total protein release can only be achieved after passaging the cells 5 times through the disruption chamber. The degree of cell disruption was increased with the increase in feeding rate, but the total protein release was highest at the middle range of feeding rate (45 L/h). The total protein release was increased with an increase in biomass concentration from 10 to $50\%$(w/v). However, higher heat dissipation as a result of high viscosity of concentrated biomass led to the denaturation of labile protein such as glucose 6-phosphate dehydrogenase (G6PDH). As a result the highest specific activity of G6PDH was achieved at biomass concentration of $20\%$(ww/v). Generally, the degree of cell disruption and total protein released were increased with an increase in impeller tip speed, but the specific activity of G6PDH was decreased substantially at higher impeller tip speed (14 m/s). Both the degree of cell disruption and total protein release increased, as the bead loading increased from 75 to $85\% (v/v)$. Hence, in order to obtain a higher yield of labile protein such as G6PDH, the yeast cell should not be disrupted at biomass concentration and impeller tip speed higher than $20\%(w/v)$ and 10 m/s, respectively.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.

• Journal of Powder Materials
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• v.30 no.2
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• pp.107-115
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• 2023

Li_1.3Al_0.3Ti_1.7(PO₄)₃(LATP) is considered a promising material for all-solid-state lithium batteries owing to its high moisture stability, wide potential window (~6 V), and relatively high ion conductivity (10^-3-10^-4 S/cm). Solid electrolytes based on LATP are manufactured via sintering, using LATP powder as the starting material. The properties of the starting materials depend on the synthesis conditions, which affect the microstructure and ionic conductivity of the solid electrolytes. In this study, we synthesize the LATP powder using sol-gel and co-precipitation methods and characterize the physical properties of powder, such as size, shape, and crystallinity. In addition, we have prepared a disc-shaped LATP solid electrolyte using LATP powder as the starting material. In addition, X-ray diffraction, scanning electron microscopy, and electrochemical impedance spectroscopic measurements are conducted to analyze the grain size, microstructures, and ion conduction properties. These results indicate that the synthesis conditions of the powder are a crucial factor in creating microstructures and affecting the conduction properties of lithium ions in solid electrolytes.

• Biotechnology and Bioprocess Engineering:BBE
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• v.11 no.5
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• pp.466-469
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• 2006

The bed stability of Streamline DEAE (p = 1.2 g/mL) in a 20mm (i.d.) glass expanded bed contactor, and its performance on the recovery of glucose 6-phosphate dehydrogenase (G6PDH) from unclarified yeast homogenate were investigated. A residence time distribution study showed that a stable expanded bed was achieved. The theoretical plate and Bodenstein numbers determined were 25 and 53, respectively. A recovery yield of 87% and purification factor of 4.1 were achieved in the operation using 5% (w/v) biomass concentration feedstock. The performance of the anion exchange EBAC was still considerable good at a biomass concentration as high as 15% (w/v).

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Bulletin of the Korean Chemical Society
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• v.33 no.6
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• pp.1861-1866
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• 2012

The new semiconducting copolymers with 4,4-dialkyl-$4H$-cyclopenta[2,1-$b$:3,4-$b^{\prime}$]dithiophene and 2,2-dimethyl-$2H$-benzimidazole units were synthesized. The fused aromatic rings, such as cyclopentadithiophene (CPDT) unit, can make the polymer backbone more rigid and coplanar, which induces long conjugation length, narrow band gap, and strong intermolecular ${\pi}-{\pi}$ interaction. The stacking ability was controlled through attaching of linear or branched alkyl side chains. The spectra of PEHCPDTMBI and PHCPDTMBI in the solid films show absorption bands with maximum peaks at 401, 759 and 407, 768 nm, and the absorption onsets at 925 and 954 nm, corresponding to band gaps of 1.34 and 1.30 eV, respectively. The devices comprising PHCPDTMBI with $TiO_X$ showed a $V_{OC}$ of 0.39 V, a $J_{SC}$ of 1.14 $mA/cm^2$, and a $FF$ of 0.34, giving a power conversion efficiency of 0.15%. The PHCPDTMBI with linear alkyl chain on CPDT shows good solubility in organic solvent with higher PCE value than that of PEHCPDTMBI.