• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.869-873
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• 2004

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient, piezoelectric, and a photo refractive properties. In this study, SBN60(x=0.6) thin film was manufactured by ion beam sputtering technique. Using the prepared SBN60 target in $Ar/O_2$ atmosphere as-deposited SBN60 thin film on Pt(100)/$TiO_2/SiO_2/Si$ substrate crystallization and orientation behavior as well as electric properties of SBN60 thin film were examined. SBN60 deposition up to $3000{\AA}$ in thickness, SBN60 thin film was heat-treated at $650^{\circ}C{\sim}800^{\circ}C$. The orientation was shown primarily along (001) plane from XRD pattern where working pressure was $4.3{\times}10^{-4}$ torr. The deposited layer was uniform, preferred orientatin and crystallization behavior resulted in the change of $O_2$ ratio was observed. In electric propertie of Pt/SBN60/Pt thin film capacitor remnant polarization (2Pr) value was $10{\mu}C/cm^2$, the coercive filed (Ec) 50 kV/cm, and the dielectric constant 615, respectively.

• 한국전기전자재료학회논문지
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• 제26권2호
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• pp.98-103
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• 2013

The alumina substrates that Ni electrode was printed on and the multi-layered PTCR thermistors of which composition is $(Ba_{0.998}Ce_{0.002})TiO_3+0.001MnCO_3+0.05BN$ were fabricated by a thick film process, and the effect of re-oxidation temperature on their resistivities and resistance jumps were investigated, respectively. Ni electroded alumina substrate and the multi-layered PTC thermistor were sintered at $1150^{\circ}C$ for 2 h under $PO_2=10^{-6}$ Pa and then re-oxidized at $600{\sim}850^{\circ}C$ for 20 min. With increasing the re-oxidation temperature, the room temperature resistivity increased and the resistance jump ($LogR_{290}/R_{25}$) decreased, which seems to be related to the oxidation of Ni electrode. The small sized chip PTC thermistor such as 2012 and 3216 exhibits a nonlinear and rectifying behavior in I-V curve but the large sized chip PTC thermistor such as 4532 and 6532 shows a linear and ohmic behavior. Also, the small sized chip PTC thermistor such as 2012 and 3216 is more dependent on the re-oxidation temperature and easy to be oxidized in comparison with the large sized chip PTC thermistor such as 4532 and 6532. So, the re-oxidation conditions of chip PTC thermistor may be determined by considering the chip size.

• 한국건설순환자원학회논문집
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• 제1권3호
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• pp.233-239
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• 2013

콘크리트의 표면보호제은 표면으로부터 함침제를 함침시켜 표층부의 개질을 목적으로 사용하며 주로 Silane계 및 Silicate계 재료가 사용된다. 일반적으로 이용되는 Silicate는 Sodium과 Lithium silicate이며 탄산화한 부분의 알칼리 부여와 성능저하가 예상되는 콘크리트 부재의 구체 강화 등 성능회복을 목적으로 사용한다. 본 연구에서는 Self-Cleaning 실리케이트계 콘크리트 표면보호제로서 TEOS, $TiO_2$, Lithium silicate를 사용하여 노출 및 컬러 콘크리트 등의 고기능성이 요구되는 건축물에 적용이 가능한 Self-Cleaning 실리케이트계 콘크리트 표면보호제를 제조하였다. 또한 제조된 표면보호제의 건축물 적용을 위한 표면접촉각, 방오성능, 표면특성 및 조직관찰 등의 성능을 검토하였다. 실험결과 Self-Cleaning 실리케이트계 콘크리트 표면보호제를 적용한 시험체는 접촉각 $20^{\circ}$ 이하의 친수성을 보였고 기능성 부여가 가능하므로 표면보호제로서 사용이 가능하다.

• Molecular & Cellular Toxicology
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• 제3권1호
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• pp.36-45
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• 2007

Several features of the implant surface, such as topography, roughness, and composition play a relevant role in implant integration with bone. This study was conducted in order to determine the effects of different-coatings on Ti surfaces on the biological responses of a human osteoblast-like cell line (MG63). MG63 cells were cultured on HA (Hydroxyapatite coating on Titanium), Ano (HA coating on anodized surface Titanium), Zr (zirconium-coating on Titanium), and control (non-coating on Titanium). The morphology of these cells was assessed by SEM. The cDNAs prepared from the total RNAs of the MG63 were hybridized into a human cDNA microarray (1,152 elements). The appearances of the surfaces observed by SEM were different on each of the three dental substrate types. MG63 cells cultured on HA, Ano, Zr, and control exhibited cell-matrix interactions. In the expression of several genes were up-, and down-regulated on the different surfaces. The attachment and expression of key osteogenic regulatory genes were enhanced by the surface morphology of the dental materials used.

• Bulletin of the Korean Chemical Society
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• 제25권5호
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• pp.687-693
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• 2004

Composite membranes with a titania layer were prepared by soaking-rolling method with the titania sol of nanoparticles formed in the sol-gel process and investigated regarding the vapor permeation of various organic mixtures. The support modification was conducted by pressing $SiO_2$ xerogel of 500 nm in particle size under 10 MPa on the surface of a porous stainless steel (SUS) substrate and designed the multi-layered structure by coating the intermediate layer of ${\gamma}-Al_2O_3$. Microstructure of titania membrane was affected by heat-treatment and synthesis conditions of precursor sol, and titania formed at calcination temperature of 300$^{\circ}C$ with sol of [$H^+$]/[TIP]=0.3 possessed surface area of 210 $m^2$/g, average pore size of 1.25 nm. The titania composite membrane showed high $H_2/N_2$ selectivity and water/ethanol selectivity as 25-30 and 50-100, respectively. As a result of vapor permeation for water-alcohol and alcohol-alcohol mixture, titania composite membrane showed water-permselective and molecular-sieve permeation behavior. However, water/methanol selectivity of the membrane was very low because of chemical affinity of permeants for the membrane by similar physicochemical properties of water and methanol.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.

• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• 생명과학회지
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• 제12권2호
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• pp.151-157
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• 2002

한방재료의 하나인 택사(Alismatis Rhizoma, AR)로부터 단백성 trypsin inhibitor(TI)를 분리, 정제하여 특성을 조사하였다. 정제과정은 0-80.% 포화 황산암모늄을 이용한 염석법, DEAE-cellulose ion exchange chromatography, Sep-hadex G-150 chromatography 등을 이용하였다. 정제된 ARTI의 분자량을 gel filtration과 SDS-PAGE 한 결과 모두 약 23,000 Da으로 나타나 monomer로 되어 있는 것으로 나타났다. 온도안정성에 있어 0-6$0^{\circ}C$에서는 안정하였으나 그 이상의 온도에서는 약 35%가지 안정성이 떨어졌다. ARTI와 상품화된 soybean kunitz inhibitor의 저해능을 비교해 본 결과 ARTI 및 soybean inhibitor 각각의 농도가 0.071 $\mu$M, 1.7 $\mu$M일 때 0.025 g/$m\ell$ trypsin활성을 50% 정도 저해하는 것으로 나타났다. ARTI의 trypsin의 가수분해반응에 대한 저해형태는 비경쟁적 저해형인 것으로 나타났으며 km값은 0.81 $\mu$M이었다.