• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.10
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• pp.59-66
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• 1993

PZT thin film deposited by rf magnetron sputtering was annealed by rapid thermal process(RTP) in PbO ambient to prevent vaporing of Pb and interface reactions. Si and TiN/Ti/Si substrates were prepared to survey application of TiN/Ti layer which can prevent interface interaction with Si and crack of PZT thin films. As temperature increased. PZT thin films surface on Si substrate appeared more severe cracks which should affect electrical properties deadly. TiN/Ti(40-150${\mu}{\Omega}{\cdot}cm$) layer applied for buffer layer suppressed interface interaction and film cracking. The measured leakage current(LC) and breakdown voltage(BV) of PZT thin film on TiN/Ti/Si substrate annealed at 650$^{\circ}$C for 15 sec (thickness of 2500$\AA$) were 38 nA/cm2 and 3.5 MV/cm and dielectric constant was 310 at 1 MHz, and remanent polarization (Pr) and coercive field (Ec) were 6.4${\mu}C/cm^{2}$ and 0.2MV/cm at 60 Hz, respectively.

• Journal of the Korean Society for Heat Treatment
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• v.12 no.3
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• pp.199-205
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• 1999

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-$N_2$ discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass.

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.642-647
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• 2012

$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.

• Journal of the Korean institute of surface engineering
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• v.34 no.4
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• pp.321-326
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• 2001

The TiCrN Coatings haying three kinds of Compositions of $Ti_{36}$ $Cr_{26}$ $N_{38}$ , $Ti_{31}$ $Cr_{35}$ $N_{34}$ / and $Ti_{14}$ $Cr_{52}$ $N_{34}$ were deposited on STD 61 steel substrate by arc ion plating and were oxidized between 700 and 100$0^{\circ}C$ to identify the oxide scales formed on the coatings. The oxide scales were then analyzed using EPMA, XRD and GAXRD. During oxidation, the coatings consisting of TiN and CrN phases were reduced to TiO2 and $Cr_2$$O_3$, respectively. Titania tended to form at the outer oxide layer, whereas chromia tended to form at the inner oxide layer, owing to the different oxygen affinity. The substrate elements as well as coating elements diffused outwardly toward the oxide layer due to the concentration gradient. The growth of oxide from the TiCrN coatings was schematically expressed on the basis of thickness measurement of the reacted and unreacted coatings. The Cr element showed its stronger role to keep the TiCrN coatings from oxidation, when compared with Ni.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.396-396
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• 2012

$TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.1
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• pp.34-38
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• 1999

$PbTiO_3$(PT)thin films were prepared by simultaneous of $TiO_2$ and PbO on Si(100) substrate using metaloganic chemical vapor deposition (MOCVD). Titanium tetra-isopropoxide (TTIP) and $Pb(TMHD)_2$were used as source materials. As evaporation temperature and flow rate of TTIP were examined the crystal structure of PT thin films using XRD with setting deposition temperature, flow rate of Pb, and total flow rate of $520^{\circ}C$, 30 sccm, and 750 sccm, respectively. PT thin films could be deposited under 48~$50^{\circ}C$ and 18~22sccm of evaporation temperature and flow rate of TTIP, respectively. It was found that lead, oxygen, and silicon diffused at the iaterface between the film and the substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.6
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• pp.436-441
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• 1998

$Pt/SrTiO_3/Pb_x(Zr_{0.52}, Ti_{0.48})O_3/SrTiO_3/Si$ structure was prepared by rf-magnetron sputtering method for use in nondestructive read out ferroelectric RAM(NDRO-FEAM). PBx(Zr_{0.52}Ti_{0.48})O_3}$(PZT) and $SrTiO_3$(STO) films were deposited respectively at the temperatures of $300^{\circ}C and 500^{\circ}C$on p-Si(100) substrate. The role of the STO film as a buffer layer between the PZT film and the Si substrate was studied using X-ray diffraction (XRD), Auger electron spectroscopy (ASE), and scanning electron microscope(SEM). Structural analysis on the interfaces was carried out using a cross sectional transmission electron microscope(TEM). For PZT/Si structure, mostly Pb deficient pyrochlore phase was formed due to the serious diffusion of Pb into the Si substrate. On the other hand, for STO/PZT/STO/Si structure, the PZT film had perovskite phase and larger grain size with a little Pb interdiffusion. the interfaces of the PZT and the STO film, of the STO film and the interface layer and $SiO_2$, and of the $SiO_2$ and the Si substate had a good flatness. Across sectional TEM image showed the existence of an amorphous layer and $SiO_2$ with 7nm thickness between the STO film and the Si substrate. The electrical properties of MIFIS structure was characterized by C-V and I-V measurements. By 1MHz C-V characteristics Pt/STO(25nm)/PZT(160nm)/STO(25nm)/Si structure, memory window was about 1.2 V for and applied voltage of 5 V. Memory window increased by increasing the applied voltage and maximum voltage of memory window was 2 V for V applied. Memory window decreased by decreasing PZT film thickness to 110nm. Typical leakage current was abour $10{-8}$ A/cm for an applied voltage of 5 V.

• Journal of the Korean institute of surface engineering
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• v.28 no.6
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• pp.368-375
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• 1995

Thermal CVD method is in general used for the fabrication of TiC/$Al_2O_3$-coated carbide tools. The growth of TiC layer and the coating morphology depended on the chemical composition of the hard metal substrate on which the tool properties were strongly influenced. TiC-coated layer was grown by the diffusion of carbon from the substrate, whereas the growth of $Al_2O_3$ layer was unrelated to the composition of substrate. In the nitride hard coatings of Zr, Nb and Mo metals deposited on high speed steel substrate by magnetron sputtering, the reactivity of the metal elements was decreased with increasing group number in one period of the periodic system. The hard material films exhibited the highest adhesion with the chemical composition of stoichiometry or substoichiometry. The critical load as a measure of adhesion was evaluated using scratch tester. The CVD tools indicated the values of 80 and 40N in the coated layers with proper bonding to the substrate and with $\eta$ phase of 1$\mu\textrm{m}$ in the interface respectively, but the nitride films prepared by sputtering of PVD showed only the values between 10 and 20N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.29-34
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• 2009

PLZT thin films were deposited on platinized silicon (Pt/$TiSiO_2$/Si) substrate by RF magnetron sputtering. A $TiO_2$ buffer layer was fabricated, prior to deposition of PLZT films. the layer was strongly affected the crystallographic orientation of the PLZT films. X-ray diffraction was performed on the films to study the crystallization of the films as various substrate temperatures (Ts). According to increasing Ts, preferred orientation of films was changed (110) plane to (111) plane. The ferroelectric, dielectric and electrical properties of the films were also investigated in detail as increased substrate temperatures. The PLZT films deposited at $400^{\circ}C$ showed good ferroelectric properties with the remnant polarization of $15.8{\mu}C/cm^2$ and leakage current of $5.4{\times}10^{-9}\;A/cm^2$.

• Journal of Magnetics
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• v.21 no.2
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• pp.168-172
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• 2016

$BiMnO_3$ has been a promising candidate as a magnetoelectric multiferroic while there have been many controversial reports on its ferroelectricity. The detailed analysis of its film growth, especially the growth of thin film having monoclinic symmetry has not been reported. We studied the effect of miscut angle, the substrate surface, and film thickness on the symmetry of $BiMnO_3$ thin film. A flat $SrTiO_3$ (110) substrate resulted in a thin film with three domains of $BiMnO_3$ and 1 degree miscut in the $SrTiO_3$ (110) substrate resulted in dominant domain preference in the $BiMnO_3$ thin film. The larger miscut resulted in a nearly perfect detwinned $BiMnO_3$ film with a monoclinic phase. This strong power of domain selection due to the step edge of the substrate was efficient even for the thicker film which showed a rather relaxed growth behavior along the $SrTiO_3$ [1-10] direction.