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http://dx.doi.org/10.4191/kcers.2012.49.6.642

Preparation and Electrical Properties of TiO2 Films Prepared by Sputtering for a Pulse Power Capacitor  

Park, Sang-Shik (School of Nano-Materials Engineering, Kyungpook National University)
Publication Information
Journal of the Korean Ceramic Society / v.49, no.6, 2012 , pp. 642-647 More about this Journal
Abstract
$TiO_2$ thin films for a pulse power capacitor were deposited by RF magnetron sputtering. The effects of the deposition gas ratio and thickness on the crystallization and electrical properties of the $TiO_2$ films were investigated. The crystal structure of $TiO_2$ films deposited on Si substrates at room temperature changed to the anatase from the rutile phase with an increase in the oxygen partial pressure. Also, the crystallinity of the $TiO_2$ films was enhanced with an increase in the thickness of the films. However, $TiO_2$ films deposited on a PET substrate showed an amorphous structure, unlike those deposited on a Si substrate. An X-ray photoelectron spectroscopy(XPS) analysis revealed the formation of chemically stable $TiO_2$ films. The dielectric constant of the $TiO_2$ films as a function of the frequency was significantly changed with the thickness of the films. The films showed a dielectric constant of 100~110 at 1 kHz. However, the dissipation factors of the films were relatively high. Films with a thickness of about 1000nm showed a breakdown strength that exceeded 1000 kV/cm.
Keywords
Pulse power capacitor; $TiO_2$; Breakdown strength; R.f. sputtering; Dielectric constant;
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Times Cited By KSCI : 1  (Citation Analysis)
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