• Title/Summary/Keyword: Ti silicide

Search Result 138, Processing Time 0.021 seconds

Epitaxial Cobalt Silicide Formation using Co/Ti/(100) Si Structure (Co/Ti(100)Si 이중층을 이용한 에피텍셜 Co 실리사이드의 형성)

  • Kwon, Young-Jae;Lee, Chong-Mu;Bae, Dae-Lok;Kang, Ho-Kyu
    • Korean Journal of Materials Research
    • /
    • v.8 no.6
    • /
    • pp.484-492
    • /
    • 1998
  • The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

  • PDF

Improvement of Thermal Stability of Nickel Silicide Using Co-sputtering of Ni and Ti for Nano-Scale CMOS Technology

  • Li, Meng;Oh, Sung-Kwen;Shin, Hong-Sik;Lee, Hi-Deok
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.13 no.3
    • /
    • pp.252-258
    • /
    • 2013
  • In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

The Dependency of Surface Damage to NiSi for CMOS Technology (CMOS 소자를 위한 NiSi의 Surface Damage 의존성)

  • 지희환;안순의;배미숙;이헌진;오순영;이희덕;왕진석
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.16 no.4
    • /
    • pp.280-285
    • /
    • 2003
  • The influence of silicon surface damage on nickel-silicide (NiSi) has been characterized and H$_2$ anneal and TiN rapping has been applied to suppress the electrical, morphological deterioration phenomenon incurred by the surface damage. The substrate surface is intentionally damaged using Ar IBE (Ion beam etching) which can Precisely control the etch depth. The sheet resistance of NiSi increased about 18% by the surface damage, which is proven to be mainly due to the reduced silicide thickness. It is shown that simultaneous application of H: anneal and TiN capping layer is highly effective in suppressing the surface damage effect.

The Effects of Ti Film Thicknesses and Si Substrate Orientations on Phase Transition of Tisi$_2$ ($TiSi_2$의 상전이에 미치는 박막의 두께 및 기판의 방위의 영향)

  • Yoon, Gang-Joong;Jeon, Hyeong-Tae
    • Korean Journal of Materials Research
    • /
    • v.5 no.7
    • /
    • pp.820-828
    • /
    • 1995
  • Ti-sillcides are formed on an atomically clean Si substrate and its phase transition and surface and interface morphologies are examined depending on the Ti-film thicknesses, deposition temperatures and Si substrate orientations. Ti film thicknesses of 400$\AA$ and 200$\AA$ have been deposited at elevated temperatures from 50$0^{\circ}C$ to 90$0^{\circ}C$ with increments of 10$0^{\circ}C$ on Si(100) and Si(111) Ti-silicides are formed and analyzed with using XRD, SEM, and TEM to verify the phase transition and the surface and interface morphologies. The phase transition from C49 to C54 is observed to occur around $650^{\circ}C$ and examined to show some retardation depending on the substrate orientation and film thickness. This retardation of phase transition is explained by the consideration based on the surface and volume free energies. A rough surface of C49 TiSi$_2$is exhibited because of characteristics of nonuniform diffusion across the interface while the smooth surface and island formation of C54 TiSi$_2$is examined.

  • PDF

Formation of p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact (Co/Ti 이중막 실리사이드 접촉을 갖는 p$^{+}$-n 극저접합의 형성)

  • 장지근;엄우용;신철상;장호정
    • Journal of the Korean Institute of Telematics and Electronics D
    • /
    • v.35D no.5
    • /
    • pp.87-92
    • /
    • 1998
  • Ultr shallow p$^{+}$-n junction with Co/Ti bilayer silicidde contact was formed by ion implantation of BF$_{2}$ [energy : (30, 50)keV, dose:($5{\times}10^{14}$, $5{\times}10^{15}$/$\textrm{cm}^2$] onto the n-well Si(100) region and by RTA-silicidation and post annealing of the evaporated Co(120.angs., 170.angs.)/Ti(40~50.angs.) double layer. The sheet resistance of the silicided p$^{+}$ region of the p$^{+}$-n junction formed by BF2 implantation with energy of 30keV and dose of $5{\times}10^{15}$/$\textrm{cm}^2$ and Co/Ti thickness of $120{\AA}$/(40~$50{\AA}$) was about $8{\Omega}$/${\box}$. The junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$ -n ultra shallow junction depth including silicide thickness of about $500{\AA}$ was 0.14${\mu}$. The fabricated p$^{+}$-n ultra shallow junction with Co/Ti bilayer silicide contact did not show any agglomeration or variation of sheet resistance value after post annealing at $850^{\circ}C$ for 30 minutes. The boron concentration at the epitaxial CoSi$_{2}$/Si interface of the fabricated junction was about 6*10$6{\times}10^{19}$ / $\textrm{cm}^2$./TEX>.

  • PDF

A Study of Titanium and Cobalt Silicide (Titanium과 Cobalt silicide의 연구)

  • Kim, Sang-Yong;Yu, Seok-Bin;Seo, Yong-Jin;Kim, Tae-Hyung;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
    • /
    • 1989.11a
    • /
    • pp.122-126
    • /
    • 1989
  • A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with $TiSi_2/n^+$polyoide and $CoSi_2/n^+$polycide gate. Also, evaporated Ti,Co films on polysilicon has been annealed by RTA and furnace annealing in $N_2$ abient at temperature of $400^{\circ}C-1000^{\circ}C$. The Ti-,Co-silioide formation is characterized by 4-point probe, silicide growth rate and Its reproductivity bas been examined by SEM.

  • PDF

Effect of Surface Treatment of Ti on Oxidative Thin Film of Electronic Materials (전자재료 산화박막에 대한 Ti표면처리 효과)

  • Lee, Won-Kyu;Cho, Dae-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.6 no.3
    • /
    • pp.270-272
    • /
    • 2005
  • The behavior of surface oxidation on cobalt silicide layer was investigated under rapid thermal oxidation (RTO) conditions. The cobalt silicide layer was prepared on p-type silicon substrates. We used Ti thin film as a capping layer in order to measure the degree of oxidation of the layer. Oxide grew faster on the cobalt silicide prepared with the Ti capping layer to reach ca $500{\AA}$ at $700^{\circ}C$ in thickness. The oxide film kept growing under $550^{\circ}C\~700^{\circ}C$ of the RTO condition, resulting in a saturated state above $500{\AA}$.

  • PDF

Investigation of Ni Silicide formation at Ni/Cu/Ag Contact for Low Cost of High Efficiency Solar Cell (고효율 태양전지의 저가화를 위한 Ni/Cu/Ag 전극의 Ni Silicide 형성에 관한 연구)

  • Kim, Jong-Min;Cho, Kyeong-Yeon;Lee, Ji-Hun;Lee, Soo-Hong
    • 한국태양에너지학회:학술대회논문집
    • /
    • 2009.04a
    • /
    • pp.230-234
    • /
    • 2009
  • It is significant technique to increase competitiveness that solar cells have a high energy conversion efficiency and cost effectiveness. When making high efficiency crystalline Si solar cells, evaporated Ti/Pd/Ag contact system is widely used in order to reduce the electrical resistance of the contact fingers. However, the evaporation process is no applicable to mass production because high vacuum is needed. Furthermore, those metals are too expensive to be applied for terrestrial applications. Ni/Cu/Ag contact system of silicon solar cells offers a relatively inexpensive method of making electrical contact. Ni silicide formation is one of the indispensable techniques for Ni/Cu/Ag contact sytem. Ni was electroless plated on the front grid pattern, After Ni electroless plating, the cells were annealed by RTP(Rapid Thermal Process). Ni silicide(NiSi) has certain advantages over Ti silicide($TiSi_2$), lower temperature anneal, one step anneal, low resistivity, low silicon consumption, low film stress, absence of reaction between the annealing ambient. Ni/Cu/Ag metallization scheme is an important process in the direction of cost reduction for solar cells of high efficiency. In this article we shall report an investigation of rapid thermal silicidation of nickel on silngle crystalline silicon wafers in the annealing range of $350-390^{\circ}C$. The samples annealed at temperatures from 350 to $390^{\circ}C$ have been analyzed by SEM(Scanning Electron Microscopy).

  • PDF

Development of New Titanium Alloys for Castings (주조용 티타늄 신합금 개발)

  • Kim, Seung-Eon;Jeong, Hui-Won;Hyeon, Yong-Taek;Kim, Seong-Jun;Lee, Yong-Tae
    • 연구논문집
    • /
    • s.29
    • /
    • pp.163-171
    • /
    • 1999
  • A new titanium alloy system. Ti-xFe-ySi (x,y=0-4 wt%). was designed and characterized with the point at low cost and high strength for casting applications. Fe improved room and elevated temperature mechanical properties owing to solid solution hardening and beta phase stabilization. Si yielded titanium silicides and Si addition over 1 wt% resulted in poor ductility due to coarse silicide chains at prior beta boundaries. The optimum composition was found to be Ti-4Fe-(0.5-1)Si in the viewpoint of tensile strength and ductility which are comparable to the Ti-6Al-4V. The metal-mould reaction was also examined for Ti-xFe and Ti-xSi binary alloy system. The thickness of surface reaction layer w as not affected significantly with Fe content, while it was decreased with Si content. In the Ti-4Si alloy, no reaction layer was found. The depth of surface hardening layer was about $200\mum$ regardless of the mould materials.

  • PDF

Initial Reactions of Ti on the Atomically Clean Si Substrates (초청정한 Si 기판 위에서 Ti의 초기 반응)

  • Jeon, Hyeongtag;Nemanich, R.J.
    • Analytical Science and Technology
    • /
    • v.5 no.3
    • /
    • pp.303-308
    • /
    • 1992
  • Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed $7{\times}7$ Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures($200^{\circ}C{\sim}300^{\circ}C$) intermixing of Ti and Si is detected by AES. Substrate $1{\times}1$ LEED patterns are displayed after $400^{\circ}C$ anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the $7{\times}7$ LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.

  • PDF