• Progress in Superconductivity and Cryogenics
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• v.6 no.1
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• pp.12-17
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• 2004

High critical current density. $J_c$ over $1MA/cm^2$ at 77 K in a self field was successfully achieved from the YBCO film prepared on (100) $SrTiO_3$ single-crystal substrates by the TFA-MOD process. Unlike a normal TFA-MOD process, we prepared the TFA precursor solution by dissolving YBCO powder into the trifluoroacetic acid. A significant amount of the second phases, including $BaF_2$, was observed in the films fired at $700-725^{\circ}C$ for 2 h under $P(O_2)=10^{-3}$ atm and $P(H_2O)=4.2%$, most probably due to an insufficient reaction time, and hence $T_c$ was greatly degraded. However the films fired at $750-800^{\circ}C$ for 2 h were composed of strongly c-axis oriented YBCO grams without any second phases. and exhibited the $T_c$ values of 89.5 ~ 91 K with a sharp transition. With increasing the firing temperature from 750 to $800^{\circ}C$ average grain size of YBCO was increased and grain connectivity was enhanced. The highest $J_c$ value of $1.1MA/cm^2$ was obtained from the YBCO film fired at $800^{\circ}C$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.12
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• pp.1008-1015
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• 2002

The fabricated La-modified lead titanate (PLT) thin film without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{l-x}La_{x}Ti_{l-x/4}O_3$(x=0.1) (PLT(10)) thin film haying 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}C$$textrm{cm}^2$$.$K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03 x $10^{-11}C$.cm/J and 1.46 x $10^{-10}C$.cm/J, respectively The PLT(10) thin film has voltage responsivity (RV) of 5.IS V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity ($D^{*}$) of the PLT(10) thin film are 9.93 x $10^{-8}$W/$Hz^{1/2}$ and 1.81 x $10^{6}$cm.$Hz^{1/2}$/W at the same frequency of 100 Hz,, respectively The results means that PLT thin film having 10 mol% La content is suitable for the sensing materials of pyroelectric IR sensors.

• Korean Chemical Engineering Research
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• v.56 no.5
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• pp.718-724
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• 2018

In this study, the $Ni_{0.9}Co_{0.05}Ti_{0.05}(OH)_2$ precursor was prepared by the concentration gradient co-precipitation method. In order to overcome the structural change due to oxygen desorption in the cathode active material with high nickel content, the physical and electrochemical analysis of the cathode active material according to the calcination temperature were investigated. Physical properties of $Li_{1.05}Ni_{0.9}Co_{0.05}Ti_{0.05}O_2$ were analyzed by FE-SEM, XRD and TGA. The electrochemical performance of the coin cell using a cathode active material and $LiPF_6$(EC:EMC=1:2 vol%) electrolyte was evaluated by the initial charge/discharge efficiency, cycle retention, and rate capabilities. As a result, the initial capacity and initial efficiency of cathode materials were excellent with 244.5~247.9 mAh/g and 84.2~85.8% at the calcination temperature range of $750{\sim}760^{\circ}C$. Also, the capacity retention exhibited high stability of 97.8~99.1% after 50cycles.

• Korean Journal of Materials Research
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• v.25 no.8
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• pp.423-428
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• 2015

Impedancemetric $NO_x$ (NO and $NO_2$) gas sensors were designed with a stacked-layer structure and fabricated using $LaCr_xCo_{1-x}O_3$ (x = 0, 0.2, 0.5, 0.8 and 1) as the receptor material and $Li_{1.3}Al_{0.3}Ti_{1.7}(PO_4)_3$ plates as the solid-electrolyte transducer material. The $LaCr_xCo_{1-x}O_3$ layers were prepared with a polymeric precursor method that used ethylene glycol as the solvent, acetyl acetone as the chelating agent, and polyvinylpyrrolidone as the polymer additive. The effects of the Co concentration on the structural, morphological, and $NO_x$ sensing properties of the $LaCr_xCo_{1-x}O_3$ powders were investigated with powder X-ray diffraction, field emission scanning electron microscopy, and its response to 20~250 ppm of $NO_x$ at $400^{\circ}C$ (for 1 kHz and 0.5 V), respectively. When the as-prepared precursors were calcined at $700^{\circ}C$, only a single phase was detected, which corresponded to a perovskite-type structure. The XRD results showed that as the Co concentration of the $LaCr_xCo_{1-x}O_3$powders increased, the crystal structure was transformed from an orthorhombic phase to a rhombohedral phase. Moreover, the $LaCr_xCo_{1-x}O_3$ powders with $0{\leq}x<0.8$ had a rhombohedral symmetry. The size of the particles in the $LaCr_xCo_{1-x}O_3$powders increased from 0.1 to $0.5{\mu}m$ as the Co concentration increased. The sensing performance of the stack-structured $LaCr_xCo_{1-x}O_3/Li_{1.3}Al_{0.3}Ti_{1.7}(PO_4)_3$ sensors was found to divide the impedance component between the resistance and capacitance. The response of these sensors to NO gas was more sensitive than that to $NO_2$ gas. Compared to other impedancemetric sensors, the $LaCr_{0.8}Co_{0.2}O_3/Li_{1.3}Al_{0.3}Ti_{1.7}(PO_4)_3$ sensor exhibited good reversibility and reliable sensingresponse properties for $NO_x$ gases.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.118-128
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• 1995

Copper(l) hexafluoroacetonate trimethylvinylsilane [Cu(hafac)(TMVS)]를 precursor로 사용하여 증착온도 $160~330^{\circ}C$ 범위에서 TiN 모재 위에 낮은 전기비저항값(~2 $\mu$$\Omega$.cm)을 갖는 CVD Cu 박막을 제조하였고, 증착온도에 따른 Cu 박막의 특성을 조사하여 증착온도가 Cu 박막의 미세구조와 전기비저항에 미치는 영향을 고찰하였다. Cu 증착의 활성화에너지는 표면반응제한지역(surface-reaction-limited region)에서 10.8 kcal/mol 이었다. 표면반응에 의해 증착속도가 결정되는 증착온도 $200^{\circ}C$ 이하에서 증착된 Cu 박막은 낮은 비저항값을 갖는 치밀한 박막이었고 step coverage 또한 우수하였다. 이에 반해 물질전달이 증착속도를 결정하는 증착온도 $200^{\circ}C$이상에서 증착된 Cu 박막은 연결상태가 불량한 구형의 결정립들로 이루어져 있어서 높은 비저항값과 거친 표면형상을 나타내었다. 이와 함께 증착온도에 따른 Cu 박막의 결정립 크기, 배향성 등도 조사하였다.

• Proceedings of the Korea Air Pollution Research Association Conference
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• 2003.11a
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• pp.477-478
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• 2003

에너지 사용의 증대에 따라 대기중으로의 질소산화물 배출양이 증가하고 있으며, 이에 따른 산성비, 광화학 스모그등 많은 피해가 나타나고 있다. 이러한 질소산화물중 고정원에서 배출되는 질소산화물은 선택적 촉매환원법에 의해 제거가 되고 있다. 선택적 촉매 환원법에 사용되고 있는 촉매는 주로 V$_2$O$_{5}$/TiO$_2$ 계열로써 300 ~ 40$0^{\circ}C$ 영역에서 최적의 반응을 보인다(H. Bosch and F. Janssen, 1988). 그러나 촉매의 내구성 증진, 재가열에 따른 에너지 절감등의 이유로 저온에서 우수한 활성을 보이는 촉매의 개발이 필요하다. (중략)

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.803-808
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• 1996

Material and electrical characteristies of copper thin films prepared by metal organic chemical vapor deposition (MOCVD) have been investigated for interconnection applications in ultra large scale integration circuits (ULSI). The copper films have been deposited a TiN substrates using a metal organic precursor, hexafluoro acetylacetonate trimethyvinylsilane copper, VTMS(hfac)Cu (I). Deposition rate, grain size, surface morphology, and electrical resistvity of the copper films have been measuredfrom samples prepared at various experimental conditions, which include substrate temperature, chamber pressure, and carrier gas flow rate. Results of the experiment showed that the electrical property of the copper films is closely related to the crystallinity of the films. Lowest electrical resistivity, $2.4{\mu}{\Omega}.cm$ was obtained at the substrate temperature of $180^{\circ}C$, but the resistivity slightly increased with increasing substrate temperature due to the carbon content along the copper grain boundaries.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.2
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.

• Journal of the Korean Ceramic Society
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• v.31 no.9
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• pp.1030-1036
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• 1994

The ceramics in the system 0.5[Pb(Ni1/3Nb2/3)O3]-0.5[0.65PbTiO3-0.35PbZrO3] were prepared by conventional solid state reaction method, double calcined method (columbite precursor method) and flux method using NaCl-KCl. Amount of pyrochlore phase for the calcined powders, sintering charateristrics, dielectric and piezoelectric properties were then investigated. Sintering temperature was 1000~120$0^{\circ}C$ and in case of flux method, the amount of flux to oxide was 1 : 1 mole ratio. The dielectric and piezoelectric properties of ceramics prepared by double calcined method and flux method were found to be better than those by conventional method. It was also possible to lower sintering temperature and reduce the amount of pyrochlore phase either by double calcined method or flux method. But with increasing sintering temperature, the difference in characteristrics due to diffrent fabrication method gradually.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.496-500
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• 2017

$Pb(Mn_{1/3}Nb_{2/3})_{0.07}(Ni_{1/3}Nb_{2/3})_{0.10}(Zr_{0.5}Ti_{0.5})_{0.83}O_3$ composition ceramics with high piezoelectric properties were fabricated by the columbite precursor method for ultrasonic generators, and the effects of sintering temperature on microstructure and piezoelectric properties were systematically investigated. It was found that the tetragonality of the ceramics decreased with increase in sintering temperature. Moreover, excellent physical properties such as $d_{33}=447pC/N$, ${\varepsilon}_r=1,843$, $k_p=0.641$, and $Q_m=1,207$ were obtained for an ultrasonic generator when the second calcination temperature and sintering temperature were $720^{\circ}C$ and $920^{\circ}C$, respectively.