• Bulletin of the Korean Chemical Society
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• v.30 no.1
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• pp.219-223
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• 2009

$TiO_2$ doped with $Er^{3+\;and\;Yb^{3+}$ was used for fabricating a scattering layer and a nano-crystalline $TiO_2$ electrode layer to be used in dye-sensitized solar cells. The material was prepared using a new sol-gel combustion hybrid method with acetylene black as fuel. The $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide powder synthesized at 700oC had embossed structure morphology with a size between 27 to 54 nm that agglomerated to produce micron size particles, as observed by the scanning electron micrographs. The XRD patterns showed that the $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide had an amorphous structure, while using the same method without doping $Er^{3+}\;or\;Yb^{3+},\;TiO_2$ was obtained in the crystallite form with thea dominance of rutile phase. Fabricating a bilayer structure consisting of nano-crystalline $TiO_2$ and the synthesized $Er^{3+}$-$Yb^{3+}$ co-doped titanium oxide showed better scattering property, with an overall increase of 15.6% in efficiency of the solar cell with respect to a single nano-crystalline $TiO_2$ layer.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.5
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• pp.221-225
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• 2001

The effect of $Al_2O_3+Y_2O_3$ additives on fracture toughness of ${\beta}-SiC-TiB_2$ composites by hot-pressed sintering was investigated. The ${\beta}-SiC-TiB_2$ ceramic composites were hot-press sintered and pressureless-annealed by adding 16, 20, 24 wt% ${\beta}-SiC-TiB_2$(6:4 wt%) powder as a liquid forming additives at low temperature(1800 $^{\circ}C$) for 4 h. Phase analysis of composites by XRD revealed mostly of ${\alpha}$-SiC(6H), $TiB_2$, and YAG($Al_5Y_3O_{12}$). The relative density was over 95-88 % of the theoretical density, and the porosity increased with increasing $Al_2O_3+Y_2O_3$ contents because of the increasing tendency of pore formation. The fracture toughness showed the highest value of 5.88 MPa${\cdot}m^{1/2}$ for composites added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature. The electrical resistivity showed the lowest value of $5.22{\times}10^{-4}\;{\Omega}\;{\cdot}\;cm$ for composite added with 20 wt% $Al_2O_3+Y_2O_3$ additives at room temperature, and was all positive temperature coefficeint resistance(PTCR) against temperature up to 900 $^{\circ}C$.

• Korean Journal of Metals and Materials
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• v.50 no.3
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• pp.201-205
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• 2012

The effects of various manganese precursors for the low-temperature selective catalytic reduction (SCR) of $NO_x$ were investigated in terms of structural, morphological, and physico-chemical analyses. $MnO_x/TiO_2$ catalysts were prepared from three different precursors, manganese nitrate, manganese acetate(II), and manganese acetate(III), by the sol-gel method. The manganese acetate(III)-$MnO_x/TiO_2$ catalyst tended to suppress the phase transition from the anatase structure to the rutile or the brookite after calcination at $500^{\circ}C$ for 2 h. It also had a high specific surface area, which was caused by a smaller particle size and more uniform distribution than the others. The change of catalytic acid sites was confirmed by Raman and FT-IR spectroscopy and the manganese acetate(III)-$MnO_x/TiO_2$ had the strongest Lewis acid sites among them. The highest de-NOx efficiency and structural stability were achieved by using the manganese cetate(III) as a precursor, because of its high specific surface area, a large amount of anatase $TiO_2$, and the strong catalytic acidity.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.393-399
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• 2016

We have successfully fabricated 3D (3-dimensional) nanostructures of $TiO_2$ coated with a $g-C_3N_4$ layer via hydrothermal and sintering methods to enhance photoelectrochemical (PEC) performance. Due to the coupling of $TiO_2$ and $g-C_3N_4$, the nanostructures exhibited good performance as the higher conduction band of $g-C_3N_4$, which can be combined with $TiO_2$. To fabricate 3D nanostructures of $g-C_3N_4/TiO_2$, $TiO_2$ was first grown as a double layer structure on FTO (Fluorine-doped tin oxide) substrate at $150^{\circ}C$ for 3 h. After this, the $g-C_3N_4$ layer was coated on the $TiO_2$ film at $520^{\circ}C$ for 4 h. As-prepared samples were varied according to loading of melamine powder, with values of loading of 0.25 g, 0.5 g, 0.75 g, and 1 g. From SEM and TEM analysis, it was possible to clearly observe the 3D sample morphologies. From the PEC measurement, 0.5 g of $g-C_3N_4/TiO_2$ film was found to exhibit the highest current density of $0.12mA/cm^2$, along with a long-term stability of 5 h. Compared to the pristine $TiO_2$, and to the 0.25 g, 0.75 g, and 1 g $g-C_3N_4/TiO_2$ films, the 0.5 g of $g-C_3N_4/TiO_2$ sample was coated with a thin $g-C_3N_4$ layer that caused separation of the electrons and the holes; this led to a decreasing recombination. This unique structure can be used in photoelectrochemical applications.

• Journal of Powder Materials
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• v.20 no.6
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• pp.467-473
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• 2013

This research presents a preparation method of dental components by metal injection molding process (MIM process) using titanium scrap. About $20{\mu}m$ sized spherical titanium powders for MIM process were successfully prepared by a novel dehydrogenation and spheroidization method using in-situ radio frequency thermal plasma treatment. The effects of MIM process parameters on the mechanical and biological properties of dental components were investigated and the optimum condition was obtained. After sintering at $1250^{\circ}C$ for 1 hour in vacuum, the hardness and the tensile strength of MIMed titanium components were 289 Hv and 584 MPa, respectively. Prepared titanium dental components were not cytotoxic and they showed a good cell proliferation property.

• Journal of Sensor Science and Technology
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• v.22 no.2
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• pp.130-135
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• 2013

This study proposed a noble process to fabricate TSV (Through Silicon Via) structure which has lower cost, shorter production time, and more simple fabrication process than plating method. In order to produce the via holes, the Si wafer was etched by a DRIE (Deep Reactive Ion Etching) process. The via hole was $100{\mu}m$ in diameter and $400{\mu}m$ in depth. A dielectric layer of $SiO_2$ was formed by thermal oxidation on the front side wafer and via hole side wall. An adhesion layer of Ti and a seed layer of Au were deposited. Soldering process was applied to fill the via holes with solder paste and metal powder. When the solder paste was used as via hole metal line, sintering state and electrical properties were excellent. However, electrical connection was poor due to occurrence of many voids. In the case of metal powder, voids were reduced but sintering state and electrical properties were bad. We tried the via hole filling process by using mixing solder paste and metal powder. As a consequence, it was confirmed that mixing rate of solder paste (4) : metal powder (3) was excellent electrical characteristics.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.936-936
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• 2006

Bulk amorphous materials have been intensively studied to apply for various advanced industry fields due to their high mechanical, chemical and electrical properties. These materials have been produced by several techniques such as mechanical alloying, melt spinning and gas atomization, etc. Among them, the atomization is the most potential technique for commercialization due to high cooling rate during solidification of the melt and mass productivity. However, the amorphous powders still have some limitations because of their low ductility and toughness. Therefore, intensive efforts have to be carried out to increase the ductility and toughness. In this study, the Ni-based amorphous powder was produced by the gas atomization process. And in order to increase the ductile toughness, ductile Cu phase was coated on the Ni amorphous powder by spray drying process. The characteristics of the as-synthesis powders have been examined and briefly mentioned. The master alloy with $Ni_{57}Zr_{20}Ti_{16}Si_2Sn_3$ was prepared by vacuum induction melting furnace with graphite crucible and mold. The atomization was conducted at $1450^{\circ}C$ under the vacuum of $10^{-2}$ torr. The gas pressure during atomization was varied from 35 to 50 bars. After making the Ni amorphous powders, the spray drying was processed to produce the Cu -coated Ni amorphous composite powder. The amorphous powder and Cu nitrate solution were mixed together with a small amount of binder and then it was sprayed at temperature of $130^{\circ}C$ and rotating speed of 15,000 R.P.M.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.748-753
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• 1995

Solid solution of NaNb $O_3$70 mol% and SrTi $O_3$30 mol% was single phase. A broad dielectric peak was found at about l00K. Crystal structure was analysed at room temperature and 12K using Rietveld analysis. The unit cell was assigned to have a a doubled lattice parameter of simple perovskite sturcture at room temperatue, the structure was orthorombic with space group Pmmn. At 12K, the structure was also orthorombic with space group Pnma. This structure change with temperature was due to the distortion of oxygen octahedron. This distortion of oxygen octahedron was made by the decrease of (Ti, Nb)-O bounds length with no variation of (Ti, Nb)-O-(Ti, Nb) bound angle. Therefore the broad dielectirc peak about l00K was attributed to the structural change casued by oxygen octahedron distortion.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.136-142
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• 2022

The crystal structure, grain growth behavior, and dielectric properties of BaTiO₃ have been studied with the addition of Dy₂O₃. The powders were synthesized at ratios of (100-x)BaTiO₃-xDy₂O₃ (mol%, x = 0, 0.5, 1.0, 2.0) by a conventional solid-state synthesis, and the powder compacts were sintered at 1250℃ for 2 hours in air. As the amount of added Dy₂O₃ was increased, the crystal structure of the sintered samples changed from a tetragonal to a pseudo-cubic structure, and the tetragonality decreased. In addition, a secondary phase of Ba₁₂Dy_4.67Ti₈O₃₅ appeared when Dy₂O₃ was added. The average grain size after sintering decreased and abnormal grains appeared as the amount of Dy₂O₃ increased. It can be explained that the grain growth behavior of the Dy₂O₃ added-BaTiO₃ occurs due to the two-dimensional nucleation and growth, and is governed by the interface reaction. Further, the correlation between crystal structure, microstructure, and dielectric properties was discussed.

• Korean Journal of Materials Research
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• v.34 no.4
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• pp.185-193
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• 2024

In this study, NASICON-type Li_1+XGa_XTi_2-X(PO₄)₃ (x = 0.1, 0.3 and 0.4) solid-state electrolytes for all-solid-state batteries were synthesized through the sol-gel method. In addition, the influence on the ion conductivity of solid-state electrolytes when partially substituted for Ti⁴⁺ (0.61Å) site to Ga³⁺ (0.62Å) of trivalent cations was investigated. The obtained precursor was heat treated at 450 ℃, and a single crystalline phase of Li_1+XGa_XTi_2-X(PO₄)₃ systems was obtained at a calcination temperature above 650 ℃. Additionally, the calcinated powders were pelletized and sintered at temperatures from 800 ℃ to 1,000 ℃ at 100 ℃ intervals. The synthesized powder and sintered bodies of Li_1+XGa_XTi_2-X(PO₄)₃ were characterized using TG-DTA, XRD, XPS and FE-SEM. The ionic conduction properties as solid-state electrolytes were investigated by AC impedance. As a result, Li_1+XGa_XTi_2-X(PO₄)₃ was successfully produced in all cases. However, a GaPO₄ impurity was formed due to the high sintering temperatures and high Ga content. The crystallinity of Li_1+XGa_XTi_2-X(PO₄)₃ increased with the sintering temperature as evidenced by FE-SEM observations, which demonstrated that the edges of the larger cube-shaped grains become sharper with increases in the sintering temperature. In samples with high sintering temperatures at 1,000 ℃ and high Ga content above 0.3, coarsening of grains occurred. This resulted in the formation of many grain boundaries, leading to low sinterability. These two factors, the impurity and grain boundary, have an enormous impact on the properties of Li_1+XGa_XTi_2-X(PO₄)₃. The Li_1.3Ga_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 ℃ was denser than those sintered at other conditions, showing the highest total ion conductivity of 7.66 × 10^-5 S/cm at room temperature. The total activation energy of Li-ion transport for the Li_1.3Ga_0.3Ti_1.7(PO₄)₃ solid-state electrolyte was estimated to be as low as 0.36 eV. Although the Li_1+XGa_XTi_2-X(PO₄)₃ sintered at 1,000 ℃ had a relatively high apparent density, it had less total ionic conductivity due to an increase in the grain-boundary resistance with coarse grains.