• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.11
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• pp.725-729
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• 2014

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs) was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for the reduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the results showed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of power conversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by 0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by using electrochemical impedance analyzer (EIS).

• Korean Journal of Materials Research
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• v.3 no.1
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• pp.12-18
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• 1993

Abstract The effect of the film stress on the thermal stability of TiSi, films under the dielectric overcoat was investigated. TiS$i_2$ films with the sheet resistance of 1.2 ohm/sq. were produced by a solid-state reaction between sputtered Ti film and single-crystalline Si in an RTA (rapid thermal anneal) machine. Dielectric overcoats such as the USG (Undoped Silicate Glass, Si$O_2$) film and the PE-SiN(S$i_3$$N_4$) film were deposited by AP-CVD and PE-CVD, respectively, on the TiS$i_2$ film. The thermal stability of the TiSi, film was evaluated by changes in the sheet resistance, film stress and microstructure after furnace anneals at 90$0^{\circ}C$. Agglomeration of the TiSi2 film high temperatures results in the increase of sheet resistance and the decrease of tensile stress of TiSi, film. The stress level of the TiSi" PE-SiN and ~SG films at 90$0^{\circ}C$C was 1.3${\times}{10^{9}}$, 1.25 ${\times}{10^{10}}$, 2.26 ${\times}{10^{10}}$ dyne/c$m^2$ in tensile, respectively. Dielectric films deposited by CVD on TiSi, was effective on preventing agglomeration of TiSi,. The PE-SiN film mproved the thermal stability of TiSi, more effectively than the AP-CVD USG film. It is considered that agglomeration of the TiS$i_2$ film under the stress of dielectric overcoat at high temperature can be caused by a diffusional flow of atom called Nabarro-Herring microcreep.reep.

• Korean Journal of Materials Research
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• v.26 no.4
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• pp.207-211
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• 2016

Ti films were deposited on glass substrates under various preparation conditions in a chamber of two-facing-target type dc sputtering; after deposition, the electric resistivity values were measured using a conventional four-probe method. Crystallographic orientations and microstructures, including the texture and columnar structure, were also investigated for the Ti films. The morphological features, including the columnar structures and surface roughness, are well explained on the basis of Thornton's zone model. The electric resistivity and the thermal coefficient of the resistivity vary with the sputtering gas pressure. The minimum value of resistivity was around 0.4 Pa for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films; the apparent tendencies are almost the same for the two films, with a small difference in resistivity because of the different film thicknesses. The films deposited at high gas pressures show higher resistivities. The maximum of TCR is also around 0.4 Pa, which is the same as that obtained from the relationship between the resistivity and the gas pressure. The lattice spacing also decreases with increasing sputtering gas pressure for both the $0.5{\mu}m$ and $3.0{\mu}m$ thick films. Because they are strongly related to the sputtering gas pressures for Ti films that have a crystallographic anisotropy that is different from cubic symmetry, these changes are well explained on the basis of the film microstructures. It is shown that resistivity measurement can serve as a promising monitor for microstructures in sputtered Ti films.

• Bulletin of the Korean Chemical Society
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• v.35 no.10
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• pp.2895-2900
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• 2014

We fabricated quantum dot-sensitized solar cells (QDSSCs) using cadmium sulfide (CdS) and cadmium telluride (CdTe) quantum dots (QDs) as sensitizers. A spin coated $TiO_2$ nanoparticle (NP) film on tin-doped indium oxide glass and sputtered Au on fluorine-doped tin oxide glass were used as photo-anode and counter electrode, respectively. CdS QDs were deposited onto the mesoporous $TiO_2$ layer by a successive ionic layer adsorption and reaction method. Pre-synthesized CdTe QDs were deposited onto a layer of CdS QDs using a direct adsorption technique. CdS/CdTe QDSSCs had high light harvesting ability compared with CdS or CdTe QDSSCs. QDSSCs incorporating single-walled carbon nanotubes (SWNTs), sprayed onto the substrate before deposition of the next layer or mixed with $TiO_2$ NPs, mostly exhibited enhanced photo cell efficiency compared with the pristine cell. In particular, a maximum rate increase of 24% was obtained with the solar cell containing a $TiO_2$ layer mixed with SWNTs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.251-255
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• 2009

Nanocomposites based on coupling $TiO_2$ matrix with nanosized noble metals (Pt,Au) particles exhibited promising photoelectrode properties. The $M/TiO_2$ (M=Pt,Au) nanocomposite thin films were deposited on quartz and ITO glass substrates using a co-sputtering method. $TiO_2$ in rutile form is the dominant crystalline phase for as-deposited nanocomposite films. Along with heat treatment up to $600^{\circ}C$, XRD peaks of the rutile phase as well as those of noble metal increased in intensity and decreased in width, indicating the growth of crystallites. The anodic photocurrents of $M/TiO_2$ (M=Au,Pt) thin films were observed not only in the UV range but also in the visible light range. The photocurrent of the nanocomnosite films extended to the visible light region by dispersion of nano-sized noble metal in the $TiO_2$ matrix.

• Korean Journal of Materials Research
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• v.31 no.6
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• pp.331-338
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• 2021

Ti-Al-Si target and Cr-Si target are sputtered alternately to develop a multi-layered nitride coating on a steel mold to improve die-casting lifetime. Prior to the multi-layer deposition, a CrN layer is developed as a buffer layer on the mold to suppress the diffusion of reactive elements and enhance the cohesive strength of the multi-layer deposition. Approximately 50 nm CrSiN and TiAlSiN layers are deposited layer by layer, and form about three ㎛-thickness of multi-layered coating. From the observation of the uncoated and coated steel molds after the acceleration experiment of liquid metal injection casting, the uncoated mold is severely eroded by the adhesion of molten metallic glass. On the other hand, the multi-layer coating on the mold prevents element diffusion from the metallic glass and mold erosion during the experiment. The multi-layer structure of the coating transforms the nano-composite structured coating during the acceleration test. Since the nano-composite structure disrupts element diffusion to molten metallic glass, despite microstructure changes, the coating is not eroded by the 1,050 ℃ molten metallic glass.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.86-89
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• 2013

Dye-sensitized solar cells have a FTO/$TiO_2$/Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the $TiO_2$/FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different $O_2$:Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar:$O_2$ ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.218-219
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• 2009

$TiO_2$ thin films were deposited on si wafer and glass substrates by rf magnetron sputtering. The films were coated under argon atmosphere at different working pressures: 3mTorr, 5mTorr, 7mTorr, 10mTorr. The films were annealed at $550^{\circ}C$ for 5h after deposition. Film structures were analyzed with XRD, As the increase of working pressure, $TiO_2$ films have been good crystallinity. At 3mTorr and 5mTorr, the films were observed in rutile phase and anatase phase.

• Proceedings of the Safety Management and Science Conference
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• 2011.04a
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• pp.205-227
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• 2011

On this study, the test for air-purification was executed as using the UV lamp and the UV lamp on which the TiO2 catalyst had been deposited with glass fiber in the reactor chamber. It aimed at the basic data of air-purifier as assessing the features of removing abilities for various contaminants including CH3COOH, NH3, NO, and SO2 as varying the number of TiO2 coating, the wave of UV lamp, and the amount of additive CaO as variables.

• Journal of the Korean Ceramic Society
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• v.41 no.3
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• pp.183-189
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• 2004

Cuprous oxide (Cu$_2$O) thin films are cathodically deposited on Indium Tin Oxide (ITO) substrate. The as-deposited films were heat-treated at 30$0^{\circ}C$ to obtain Cu$_2$O. After the heat treatment, the film was changed from Cu metal into Cu$_2$O phase. The phase, morphology and photocurrent density of the films were dependent on the preparation conditions of deposition time, applied voltage, and the duration of heat treatment. The Cu$_2$O films were characterized by X-Ray Diffractometer (XRD) and Scanning Electron Microscope (SEM). The apparent grain size of the films formed by the normal method was larger than those grown by the pulse method. The CU$_2$O film what was deposited at -0.7 V for 300 sec and then, calcined at 30$0^{\circ}C$ for 1 h showed the predominant photocurrent density of 1048 $\mu$A/$\textrm{cm}^2$. And the stability of Cu$_2$O electrodes were improved with chemically deposited TiO$_2$ thin films on Cu$_2$O.