Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Influence of RF Magnetron Sputtering Condition on the ZnO Passivating Layer for Dye-sensitized Solar Cells

  • Received : 2012.09.05
  • Accepted : 2013.02.12
  • Published : 2013.04.25
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Abstract

Dye-sensitized solar cells have a FTO/$TiO_2$/Dye/Electrode/Pt counter electrode structure, yet more than a 10% electron loss occurs at each interface. A passivating layer between the $TiO_2$/FTO glass interface can prevent this loss of electrons. In theory, ZnO has excellent electron collecting capabilities and a 3.4 eV band gap, which suppresses electron mobility. FTO glass was coated with ZnO thin films by RF-magnetron sputtering; each film was deposited under different $O_2$:Ar ratios and RF-gun power. The optical transmittance of the ZnO thin film depends on the thickness and morphology of ZnO. The conversion efficiency was measured with the maximum value of 5.22% at an Ar:$O_2$ ratio of 1:1 and RF-gun power of 80 W, due to effective prevention of the electron recombination into electrolytes.

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